scholarly journals Ten-Bit 0.909-MHz 8-Channel Dual-Mode Successive Approximation ADC for a BLDC Motor Drive

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 830
Author(s):  
Chong-Cheng Huang ◽  
Guo-Ming Sung ◽  
Xiong Xiao ◽  
Shan-Hao Sung ◽  
Chao-Hung Huang
Keyword(s):  
Power Consumption ◽  
Successive Approximation ◽  
Sar Adc ◽  
Oxide Semiconductor ◽  
Motor Drive ◽  
Cmos Process ◽  
Bldc Motor ◽  
Signal To Noise ◽  
Dual Mode ◽  
Successive Approximation Adc

This paper presents a 10-bit 0.909-MHz 8-channel dual-mode successive approximation (SAR) analogue-to-digital converter (ADC) for brushless direct current (BLDC) motor drive, using a Taiwan Semiconductor Manufacturing (TSMC) 0.25 μm 1P3M Complementary Metal Oxide Semiconductor (CMOS) process. The sample-and-hold (S/H) circuit operates with two sampling modes. One is individually sampling eight channels in sequence with an S/H circuit and the other is sampling four channels simultaneously with four S/H circuits. All sampled data will be digitized with high-speed SAR ADC in time division multiplexing (TDM). A dynamic latch-type comparator is utilized to latch the output at an upper or lower level. The advantage of the designed comparator is that it performs with positive feedback to quickly complete the latch function. The double-tail latch-type architecture is utilized to mitigate the significant kickback effect by separating the pre-amplifier stage from the latch. By integrating an input NMOSFET with an input PMOSFET, the designed latch-type comparator can perform with full-swing input voltage. Measurements show that the signal-to-noise ratio (SNR), signal-to-noise-and-distortion ratio (SNDR), effective number of bits (ENOB), power consumption, and chip area are 50.56 dB, 57.03 dB, 8.11 bits, 833 μW, and 1.35 × 0.98 mm2, respectively. The main advantages of the proposed multichannel dual-mode SAR ADC are its low power consumption of 833 μW and high measured resolution of 8.11 bits.

A NOVEL SWITCHED-CURRENT SUCCESSIVE APPROXIMATION ADC

2011 ◽  
Vol 20 (01) ◽  
pp. 15-27 ◽  
Author(s):  
XIAN TANG ◽  
KONG PANG PUN
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Successive Approximation ◽  
High Speed ◽  
High Accuracy ◽  
Low Power Consumption ◽  
Cmos Process ◽  
Power Efficient ◽  
Successive Approximation Adc ◽  
Switched Current

A novel switched-current successive approximation ADC is presented in this paper with high speed and low power consumption. The proposed ADC contains a new high-accuracy and power-efficient switched-current S/H circuit and a speed-improved current comparator. Designed and simulated in a 0.18-μm CMOS process, this 8-bit ADC achieves 46.23 dB SNDR at 1.23 MS/s consuming 73.19 μW under 1.2 V voltage supply, resulting in an ENOB of 7.38-bit and an FOM of 0.357 pJ/Conv.-step.

A 1V 2.52-kS/s 367nW Rail-to-Rail 10-Bit Successive Approximation ADC

2013 ◽  
Vol 718-720 ◽  
pp. 1717-1722
Author(s):  
Xiao Yang Huang ◽  
Liu Lei Zhou ◽  
Wen Shi Li
Keyword(s):  
Successive Approximation ◽  
Low Voltage ◽  
Supply Voltage ◽  
Sar Adc ◽  
Signal To Noise ◽  
Output Rate ◽  
Analog To Digital ◽  
Successive Approximation Adc ◽  
Simulation Results ◽  
Sample Rate

A 10-bit successive approximation (SAR) analog-to-digital converter (ADC) in 90nm CMOS dedicated for sample rate limited applications is presented. The SAR ADC achieves an extra low energy by applying only one pre-opamp and without any low voltage techs in preserving the desired low power. HSPICE simulation results show that at a supply voltage of 1V and an output rate of 2.52kS/s, the SAR ADC performs a peak signal-to-noise-and-distortion ratio of 56.8dB. Our SAR ADC consumes 367nW in the simulation, corresponding to a figure of merits of 258.1fJ/conversion-step. And at lowest sample rate mode with an output rate of 126S/s, the ADC consumes only 21nW.

Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

2021 ◽  
pp. 1-5
Author(s):  
Fang Zhu ◽  
Guo Qing Luo
Keyword(s):  
Millimeter Wave ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Band ◽  
Cmos Process ◽  
Pumping Power ◽  
Dual Mode ◽  
Dc Power

Abstract In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

scholarly journals A 2.6 GS/s 8-Bit Time-Interleaved SAR ADC in 55 nm CMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 305 ◽  
Author(s):  
Dong Wang ◽  
Xiaoge Zhu ◽  
Xuan Guo ◽  
Jian Luan ◽  
Lei Zhou ◽  
...  
Keyword(s):  
High Speed ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Sar Adc ◽  
Oxide Semiconductor ◽  
Power Measurement ◽  
Cmos Process ◽  
Analog To Digital ◽  
Full Speed ◽  
Time Interleaved

This paper presents an eight-channel time-interleaved (TI) 2.6 GS/s 8-bit successive approximation register (SAR) analog-to-digital converter (ADC) prototype in a 55-nm complementary metal-oxide-semiconductor (CMOS) process. The channel-selection-embedded bootstrap switch is adopted to perform sampling times synchronization using the full-speed master clock to suppress the time skew between channels. Based on the segmented pre-quantization and bypass switching scheme, double alternate comparators clocked asynchronously with background offset calibration are utilized in sub-channel SAR ADC to achieve high speed and low power. Measurement results show that the signal-to-noise-and-distortion ratio (SNDR) of the ADC is above 38.2 dB up to 500 MHz input frequency and above 31.8 dB across the entire first Nyquist zone. The differential non-linearity (DNL) and integral non-linearity (INL) are +0.93/−0.85 LSB and +0.71/−0.91 LSB, respectively. The ADC consumes 60 mW from a 1.2 V supply, occupies an area of 400 μm × 550 μm, and exhibits a figure-of-merit (FoM) of 348 fJ/conversion-step.

A 20-MHz BW MASH Sigma–Delta Modulator with Mismatch Noise Randomization for Multi-Bit DACs

2019 ◽  
Vol 29 (07) ◽  
pp. 2050108
Author(s):  
Di Li ◽  
Chunlong Fei ◽  
Qidong Zhang ◽  
Yani Li ◽  
Yintang Yang
Keyword(s):  
Dynamic Range ◽  
Sampling Rate ◽  
Oxide Semiconductor ◽  
Quantization Noise ◽  
Cmos Process ◽  
Noise Shaping ◽  
Signal To Noise ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Chip Area

A high-linearity Multi-stAge noise SHaping (MASH) 2–2–2 sigma–delta modulator (SDM) for 20-MHz signal bandwidth (BW) was presented. Multi-bit quantizers were employed in each stage to provide a sufficiently low quantization noise level and thus improve the signal-to-noise ratio (SNR) performance of the modulator. Mismatch noise in the internal multi-bit digital-to-analog converters (DACs) was analyzed in detail, and an alternative randomization scheme based on multi-layer butterfly-type network was proposed to suppress spurious tones in the output spectrum. Fabricated in a 0.18-[Formula: see text]m single–poly 4-metal Complementary Metal Oxide Semiconductor (CMOS) process, the modulator occupied a chip area of 0.45[Formula: see text]mm2, and dissipated a power of 28.8[Formula: see text]mW from a 1.8-V power supply at a sampling rate of 320[Formula: see text]MHz. The measured spurious-free dynamic range (SFDR) was 94[Formula: see text]dB where 17-dB improvement was achieved by applying the randomizers for multi-bit DACs in the first two stages. The peak signal-to-noise and distortion ratio (SNDR) was 76.9[Formula: see text]dB at [Formula: see text]1 dBFS @ 2.5-MHz input, and the figure-of-merit (FOM) was 126[Formula: see text]pJ/conv.

Design of a power-efficient Kogge–Stone adder by exploring new OR gate in 45nm CMOS process

Circuit World ◽  
2020 ◽  
Vol 46 (4) ◽  
pp. 257-269
Author(s):  
Vimukth John ◽  
Shylu Sam ◽  
S. Radha ◽  
P. Sam Paul ◽  
Joel Samuel
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Arithmetic Function ◽  
Logic Circuit ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Content Type ◽  
Simulation Results ◽  
Circuit Power ◽  
Or Gate

Purpose The purpose of this work is to reduce the power consumption of KSA and to improve the PDP for data path applications. In digital Very Large – Scale Integration systems, the addition of two numbers is one of the essential functions. This arithmetic function is used in the modern digital signal processors and microprocessors. The operating speed of these processors depends on the computation of the arithmetic function. The speed computation block for most of the datapath elements was adders. In this paper, the Kogge–Stone adder (KSA) is designed using XOR, AND and proposed OR gates. The proposed OR gate has less power consumption due to the less number of transistors. In arithmetic logic circuit power, delay and power delay products (PDP) are considered as the important parameters. The delays reported for the proposed OR gate are less when compared with the conventional Complementary Metal Oxide Semiconductor (CMOS) OR gate and pre-existing logic styles. The proposed circuits are optimized in terms of power, delay and PDP. To analyze the performance of KSA, extensive Cadence Virtuoso simulations are used. From the simulation results based on 45 nm CMOS process, it was observed that the proposed design has obtained 688.3 nW of power consumption, 0.81 ns of delay and 0.55 fJ of PDP at 1.1 V. Design/methodology/approach In this paper, a new circuit for OR gate is proposed. The KSA is designed using XOR, AND and proposed OR gates. Findings The proposed OR gate has less power consumption due to the less number of transistors. The delays reported for the proposed OR gate are less when compared with the conventional CMOS OR gate and pre-existing logic styles. The proposed circuits are optimized in terms of power, delay and PDP. Originality/value In arithmetic logic circuit power, delay and PDP are considered as the important parameters. In this paper, a new circuit for OR gate is proposed. The power consumption of the designed KSA using the proposed OR gate is very less when compared with the conventional KSA. Simulation results show that the performance of the proposed KSA are improved and suitable for high speed applications.

scholarly journals Modeling of High-Resolution Data Converter: Two-Step Pipelined-SAR ADC based on ISDM

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 137 ◽  
Author(s):  
Bo Gao ◽  
Xin Li ◽  
Jie Sun ◽  
Jianhui Wu
Keyword(s):  
High Resolution ◽  
Low Noise ◽  
Sar Adc ◽  
Total Power ◽  
Cmos Process ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Signal To Noise ◽  
Analog To Digital ◽  
High Bandwidth

The features of high-resolution and high-bandwidth are in an increasing demand considering to the wide range application fields based on high performance data converters. In this paper, a modeling of high-resolution hybrid analog-to-digital converter (ADC) is proposed to meet those requirements, and a 16-bit two-step pipelined successive approximation register (SAR) analog-to-digital converter (ADC) with first-order continuous-time incremental sigma-delta modulator (ISDM) assisted is presented to verify this modeling. The combination of high-bandwidth two-step pipelined-SAR ADC with low noise ISDM and background comparator offset calibration can achieve higher signal-to-noise ratio (SNR) without sacrificing the speed and plenty of hardware. The usage of a sub-ranging scheme consists of a coarse SAR ADC followed by an fine ISDM, can not only provide better suppression of the noise added in 2nd stage during conversion but also alleviate the demands of comparator’s resolution in both stages for a given power budget, compared with a conventional Pipelined-SAR ADC. At 1.2 V/1.8 V supply, 33.3 MS/s and 16 MHz input sinusoidal signal in the 40 nm complementary metal oxide semiconductor (CMOS) process, the post-layout simulation results show that the proposed hybrid ADC achieves a signal-to-noise distortion ratio (SNDR) and a spurious free dynamic range (SFDR) of 86.3 dB and 102.5 dBc respectively with a total power consumption of 19.2 mW.

A 3.03 μW 10-BIT 200 KS/s SAR ADC IN 0.18 μM CMOS

2013 ◽  
Vol 22 (04) ◽  
pp. 1350026 ◽  
Author(s):  
ZHANGMING ZHU ◽  
YU XIAO ◽  
LIANG LIANG ◽  
LIANXI LIU ◽  
YINTANG YANG
Keyword(s):  
Power Consumption ◽  
Figure Of Merit ◽  
Cmos Process ◽  
Control Logic ◽  
Signal To Noise ◽  
Dynamic Comparator ◽  
Switching Sequence ◽  
Analog To Digital ◽  
Static Power ◽  
Simulation Results

Based on TSMC 0.18 μm 1.8 V CMOS process, a low power 10-bit 200 KS/s successive approximation register (SAR) analog-to-digital (ADC) is realized. This paper mainly considers the improvement of linearity and the optimization of power consumption. And a novel switching sequence is proposed which allows both to achieve a better compromise. Moreover, the fully dynamic comparator, which consumes no static power, and the optimization of SAR control logic, further reduce power consumption. The simulation results show that at 1.0 V supply and 200 KS/s, the ADC achieves an signal-to-noise and distortion-ration (SNDR) of 59.78 dB and consumes 3.03 μW, resulting in a figure-of-merit (FOM) of 19.0 fJ/conversion-step. The ADC core occupies an active area of only 260 × 220 μm2.

A 1-V, 8-bit successive approximation ADC in standard CMOS process

2000 ◽  
Vol 35 (4) ◽  
pp. 642-646 ◽  
Author(s):  
S. Mortezapour ◽  
E.K.F. Lee
Keyword(s):  
Successive Approximation ◽  
Cmos Process ◽  
Successive Approximation Adc ◽  
Standard Cmos Process
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