scholarly journals An Experimental Evaluation of Resistive Defects and Different Testing Solutions in Low-Power Back-Biased SRAM Cells

Electronics ◽  
2022 ◽  
Vol 11 (2) ◽  
pp. 203
Author(s):  
Nunzio Mirabella ◽  
Michelangelo Grosso ◽  
Giovanna Franchino ◽  
Salvatore Rinaudo ◽  
Ioannis Deretzis ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Experimental Evaluation ◽  
Test Methods ◽  
Manufacturing Processes ◽  
Sram Cell ◽  
Device Integration ◽  
Different Types ◽  
Device Operation ◽  
Resistive Defects

This paper compares different types of resistive defects that may occur inside low-power SRAM cells, focusing on their impact on device operation. Notwithstanding the continuous evolution of SRAM device integration, manufacturing processes continue to be very sensitive to production faults, giving rise to defects that can be modeled as resistances, especially for devices designed to work in low-power modes. This work analyzes this type of resistive defect that may impair the device functionalities in subtle ways, depending on the defect characteristics and values that may not be directly or easily detectable by traditional test methods. We analyze each defect in terms of the possible effects inside the SRAM cell, its impact on power consumption, and provide guidelines for selecting the best test methods.

scholarly journals Comprehensive Analysis of SRAM Cell Architectures With 18nm FinFET for Low Power Applications

2021 ◽  
Author(s):  
T. Santosh Kumar ◽  
Suman Lata Tripathi
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Reduction Technique ◽  
Leakage Currents ◽  
Leakage Reduction ◽  
Sram Cell ◽  
Supply Voltage Scaling ◽  
Better Than

Abstract The SRAM cells are used in many applications where power consumption will be the main constraint. The Conventional 6T SRAM cell has reduced stability and more power consumption when technology is scaled resulting in supply voltage scaling, so other alternative SRAM cells from 7T to 12T have been proposed which can address these problems. Here a low power 7T SRAM cell is suggested which has low power consumption and condensed leakage currents and power dissipation. The projected design has a leakage power of 5.31nW and leakage current of 7.58nA which is 84.9% less than the 7T SRAM cell without using the proposed leakage reduction technique and it is 22.4% better than 6T SRAM and 22.1% better than 8T SRAM cell when both use the same leakage reduction technique. The cell area of the 7T SRAM cell is 1.25µM2, 6T SRAM is 1.079µM2 and that of 8T SRAM is 1.28µM2all the results are simulated in cadence virtuoso using 18nm technology.

Novel Architecture for Low-Power CNTFET-Based Compressors

2019 ◽  
Vol 28 (12) ◽  
pp. 1950207 ◽  
Author(s):  
Morteza Dadashi Gavaber ◽  
Mehrdad Poorhosseini ◽  
Saadat Pourmozafari
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Field Effect Transistors ◽  
Critical Path ◽  
Building Blocks ◽  
Cmos Circuits ◽  
Xor Gate ◽  
Speed Reduction ◽  
Different Types ◽  
Power Delay Product

Carbon nanotube field-effect transistors (CNTFETs) are excellent candidates for the replacement of traditional CMOS circuits. One of the most important modules in many arithmetic circuits is multiplier. Sometimes multipliers may occupy more area as well as consume high power which may cause speed reduction in the critical path. Compressors are important building blocks which are used in most multipliers. In this paper, a low-power architecture is proposed which can be used in compressor designs. The proposed architecture uses a low-power three-input XOR gate to reduce area, delay and power consumption. In order to evaluate the delay and power consumption of circuits, we have used four different types of compressors (3–2, 4–2, 5–2 and 7–2). These four designs were simulated using HSPICE simulation tool with 32-nm CMOS model based on 1-V and 1-GHz frequency operator. The results indicate that the proposed compressor architectures have less power–delay product (PDP) and power consumption in comparison with the existing proposed compressors.

A Novel Darlington-Based 8T CNTFET SRAM Cell for Low Power Applications

2021 ◽  
pp. 2150213
Author(s):  
M. Elangovan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Simulation Tool ◽  
Stanford University ◽  
Memory Cells ◽  
Power Performance ◽  
Dynamic Power ◽  
Memory Design ◽  
Noise Margin ◽  
Sram Cell

The design of low power memory cells is the dream of engineers in memory design. A Darlington-based 8T CNTFET SRAM cell is suggested in this paper. It is called the proposed P_CNTFET Darlington 8T SRAM Cell. Compared with that of the traditional 6T and 8T CNTFET SRAM cells, the power and noise performances of the proposed SRAM cell are comparable. Compared to the traditional SRAM cells, the write, hold, read and dynamic power consumption of the proposed cell is much lower. The CNTFET parameters are optimized to boost the noise margin performance of the suggested bit cell. For optimized parameters, the power consumption and SNM of the proposed cell are compared with conventional cells. In contrast to the conventional cells, the HSNM and WSNM of the proposed cell are improved by 6.25% and 66.6%. The proposed cell’s RSNM is 38% greater than the traditional 6T SRAM cell. The proposed cell’s RSNM is 3.33% less than the traditional 8T SRAM cell. MOSFET is also used to implement the proposed SRAM cell and its noise margin and power performance are compared with traditional MOSFET-based SRAM cells. As with the conventional cells, the MOSFET-based implementation of the proposed cell power and SNM performance is also very good. The simulation is done with the HSPICE simulation tool using the Stanford University 32[Formula: see text]nm CNTFET model.

Area optimization in 8T SRAM cell for low power consumption

2015 ◽  
Author(s):  
M.S.Z Sarker ◽  
Mokammel Hossain ◽  
Nozmul Hossain ◽  
Md. Rasheduzzaman ◽  
Md. Ashraful Islam
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Low Power Consumption ◽  
Sram Cell ◽  
Area Optimization

scholarly journals Design of Area Efficient, Low-Power and Reliable Transmission Gate-based 10T SRAM Cell for Biomedical Application

2021 ◽  
Author(s):  
Aswini Valluri ◽  
◽  
Sarada Musala ◽  
Muralidharan Jayabalan ◽  
◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Biomedical Application ◽  
Cmos Technology ◽  
Total Power ◽  
Silicon Area ◽  
Transmission Gate ◽  
Read Operation ◽  
Sram Cell ◽  
Total Power Consumption

There is an immense necessity of several kilo bytes of embedded memory for Biomedical systems which typically operate in the sub-threshold domain with perfect efficiency. SRAMs (Static Random Access Memory) dominates the total power consumption and the overall silicon area, as 70% of the die has been occupied by them. This brief proposes the design of a Transmission gate-based SRAM cell for Bio medical application eliminating the use of peripheral circuitry during the read operation. It commences the read operation directly with the help of Transmission gates with which the data stored in the storage nodes can be read, instead of using the precharge and sense amplifier circuits which suits better for the implantable devices. This topology offers smaller area, reduced delay, low power consumption as well as improved data stabilization in the read operation. The cell is implemented in 45nm CMOS technology operated at 0.45V.

High Stable and Low Power 10T CNTFET SRAM Cell

2019 ◽  
Vol 29 (10) ◽  
pp. 2050158
Author(s):  
M. Elangovan ◽  
K. Gunavathi
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Large Scale ◽  
Supply Voltage ◽  
Memory Cell ◽  
Vlsi Circuits ◽  
Order Effects ◽  
Power Performance ◽  
Sram Cell ◽  
Nanoscale Range

The ultimate aim of a memory designer is to design a memory cell which could consume low power with high data stability in the deep nanoscale range. The implementation of Very Large-Scale Integration (VLSI) circuits using MOSFETs in nanoscale range faces many issues such as increasing of leakage power and second-order effects that are easily affected by the PVT variation. Hence, it is essential to find the best alternative of MOSFET for deep submicron design. The Carbon Nanotube Field Effect Transistor (CNTFET) can eradicate all the demerits of MOSFET and be the best replacement of MOSFET for nanoscale range design. In this paper, a 10T CNTFET Static Random Access Memory (SRAM) cell is proposed. The power consumption and Static Noise Margin (SNM) are analyzed. The power consumption and stable performance of the proposed 10T CNTFET SRAM cell are compared with that of conventional 10T CNTFET SRAM cell. The power and stability analyses of the proposed 10T and conventional 10T CNTFET SRAM cells are carried out for the CNTFET parameters such as pitch and chiral vector ([Formula: see text]). The power and SNM analyses are carried out for [Formula: see text]20% variation of oxide thickness (Hox), different dielectric constant (Kox). The supply voltage varies from 0.9[Formula: see text]V to 0.6[Formula: see text]V and temperature varies from 27∘C to 125∘C. The simulation results show that the proposed 10T CNTFET SRAM cell consumes lesser power than conventional 10T CNTFET SRAM cell during the write, hold and read modes. The write, hold and read stability of the proposed 10T CNTFET SRAM cell are higher as compared with that of conventional 10T CNTFET SRAM. The conventional and proposed 10T SRAM cells are also implemented using MOSFET. The stability and power performance of proposed 10T SRAM cell is also as good as conventional 10T SRAM for MOSFET implementation. The proposed 10T SRAM cell consumes lesser power and gives higher stability than conventional 10T SRAM cell in both CNTFET and MOSFET implementation. The simulation is carried out using Stanford University 32[Formula: see text]nm CNTFET model in HSPICE simulation tool.

Sign in / Sign up

Export Citation Format

Share Document