scholarly journals A 0.5~0.7 V LC Digitally Controlled Oscillator Based on a Multi-Stage Capacitance Shrinking Technique

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1336
Author(s):  
Zixuan Wang ◽  
Hongyang Wu ◽  
Xin Wang ◽  
Mingmin Shi ◽  
Shanwen Hu ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Power ◽  
Low Voltage ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Multi Stage ◽  
Digitally Controlled ◽  
Digitally Controlled Oscillator ◽  
The Cost ◽  
Lc Tank

This paper presents a 2.4 GHz LC digitally controlled oscillator (DCO) at near-threshold supplies (0.5~0.7 V). It was a challenge to achieve a low voltage, low power, and high resolution simultaneously. DCOs with metal oxide semiconductor (MOS) varactors consume low power, but their resolution is limited. ΔΣ-DCOs can achieve a high resolution at the cost of high power consumption. A multi-stage capacitance shrinking technique was proposed in this paper to address the tradeoff mentioned above. The unit variable capacitance of the LC tank was largely reduced by the bridging capacitors and the number of stages. A current-reuse technique was used to further lower the power. Based on the above techniques, the prototype was fabricated using a 130-nm complementary MOS (CMOS) technology with multiple supplies (0.5~0.7 V for the DCO core, 1.2 V for the buffer). The measurement results showed that the phase noise at a 0.6-V supply was −126.27 dBc/Hz at 1 MHz and −125.9480 dBc/Hz at 1 MHz at the carriers of 2.4 GHz and 2.5 GHz, respectively. The best figure of merit (FoM) of 195.68 was obtained when VDD = 0.6 V. The DCO core consumed 1.1 mA at a 0.6-V supply.

Optimization of building blocks for multi-stage 17–44 dB 6.1–9.6 mW 90-nm K-band front-ends

2013 ◽  
Vol 3 (4) ◽  
Author(s):  
Apratim Roy ◽  
A. Harun Rashid
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Optimization Procedure ◽  
Building Blocks ◽  
Cmos Technology ◽  
Power Requirement ◽  
Reverse Isolation ◽  
Multi Stage ◽  
Forward Gain ◽  
K Band

AbstractIn this article, five two-stage ∼6-mW and four three-stage ∼9-mW matched amplifier architectures are proposed to establish optimization procedure and quantify relative merits of cascode (CC), common-gate (CG), and commonsource (CS) building blocks for low-voltage low-power multi-stage front-ends. The circuits are simulated with a 90-nm CMOS technology including modeling of layout parasites. Integrated bias trees and passive port matching networks are incorporated in the K-band designs. In the face of process mismatch, variability in noise and gain figures remains <0.39 dB and <7.1 dB from the design values. The five combinations of building blocks in twostage low-power (6.1–6.6 mW) amplifiers achieve linearity (IIP3) in the range of −5.2∼–13.5 dBm, good reverse isolation (better than −26 dB), 2.89–3.82 dB noise penalties, and 17.2–25.5 dB peak forward gain. In case of threestage front-ends built with CS, CC, and CG blocks (power rating 9.2–9.6 mW), forward gain and optimized noise figures are found as >33 dB and <3.26 dB, respectively. They achieve −2.5∼18.3 dBm IIP3, <−39 dB reverse isolation, and <−17 dB minimum IRL. The results are compared with reported simulated findings on CMOS multistage amplifiers to highlight their relative advantages in terms of power requirement and decibel(gain)-per-watt.

scholarly journals An ultra low power and low complexity all digital PLL with a high resolution digitally controlled oscillator

2011 ◽  
Vol 8 (21) ◽  
pp. 1801-1807 ◽  
Author(s):  
Arash Abadian ◽  
Mojtaba Lotfizad ◽  
M.B. Ghaznavi-Ghoushchi ◽  
Nasser Erfani Majd
Keyword(s):  
High Resolution ◽  
Low Power ◽  
Low Complexity ◽  
Ultra Low Power ◽  
Digitally Controlled ◽  
Digitally Controlled Oscillator

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

scholarly journals Low Power Robust Early Output Asynchronous Block Carry Lookahead Adder with Redundant Carry Logic

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 243 ◽  
Author(s):  
Padmanabhan Balasubramanian ◽  
Douglas Maskell ◽  
Nikos Mastorakis
Keyword(s):  
Low Power ◽  
Digital Signal Processor ◽  
Digital Signal ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Power Design ◽  
Cmos Technology ◽  
General Purpose ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Cycle

Adder is an important datapath unit of a general-purpose microprocessor or a digital signal processor. In the nanoelectronics era, the design of an adder that is modular and which can withstand variations in process, voltage and temperature are of interest. In this context, this article presents a new robust early output asynchronous block carry lookahead adder (BCLA) with redundant carry logic (BCLARC) that has a reduced power-cycle time product (PCTP) and is a low power design. The proposed asynchronous BCLARC is implemented using the delay-insensitive dual-rail code and adheres to the 4-phase return-to-zero (RTZ) and the 4-phase return-to-one (RTO) handshaking. Many existing asynchronous ripple-carry adders (RCAs), carry lookahead adders (CLAs) and carry select adders (CSLAs) were implemented alongside to perform a comparison based on a 32/28 nm complementary metal-oxide-semiconductor (CMOS) technology. The 32-bit addition was considered for an example. For implementation using the delay-insensitive dual-rail code and subject to the 4-phase RTZ handshaking (4-phase RTO handshaking), the proposed BCLARC which is robust and of early output type achieves: (i) 8% (5.7%) reduction in PCTP compared to the optimum RCA, (ii) 14.9% (15.5%) reduction in PCTP compared to the optimum BCLARC, and (iii) 26% (25.5%) reduction in PCTP compared to the optimum CSLA.

Design of Low Voltage Low Power LPF for WSN Node

2013 ◽  
Vol 760-762 ◽  
pp. 54-59
Author(s):  
Yang Lin ◽  
Zhi Qun Li ◽  
Chen Jian Wu ◽  
Meng Zhang ◽  
Zeng Qi Wang
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Frequency Tuning ◽  
Cmos Technology ◽  
Pass Band ◽  
Automatic Frequency ◽  
Temperature Deviation ◽  
Op Amp ◽  
Active Rc Filter ◽  
Operation Amplifier

A fourth-order low-pass continuous-time filter for a WSN transmitter is presented. The active RC filter was chosen for the high linearity, designed by using the leapfrog topology imitates the passive filter. The operation amplifier (op-amp) adopted by the filter is feed-forward operation amplifier, which could get the GBW as large as possible under the low power consumption. The cut-off frequency deviation due to the process corner, aging and temperature deviation is adjusted by an automatic frequency tuning circuit. The filter in a 0.18μm RF CMOS technology consumes 1mW from a 1V power supply. The measured results of the chip show that the bandwidth is about 1.5MHz. The voltage gain of filter is about-4.5dB with the buffer, the ripple in the pass-band is lower than 0.5 dB, and the channel rejection ratio is larger than 30dB at 4MHz.

Simulations and Modeling of TFET for Low Power Design

2016 ◽  
pp. 640-667 ◽  
Author(s):  
Sunil Kumar ◽  
Balwinder Raj
Keyword(s):  
Low Power ◽  
Semiconductor Industry ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Power Design ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Technology Advancement ◽  
Channel Effects ◽  
Tunnel Fets

In Complementary Metal-Oxide-Semiconductor (CMOS) technology, scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past four decades. However, as the technology advancement on nanometer scale regime for the purpose of building ultra-high density integrated electronic computers and extending performance, CMOS devices are facing fundamental problems such as increased leakage currents, large process parameter variations, short channel effects, increase in manufacturing cost, etc. The new technology must be energy efficient, dense, and enable more device function per unit area and time. There are many novel nanoscale semiconductor devices, this book chapter introduces and summarizes progress in the development of the Tunnel Field-Effect Transistors (TFETs) for low power design. Tunnel FETs are interesting devices for ultra-low power applications due to their steep sub-threshold swing (SS) and very low OFF-current. Tunnel FETs avoid the limit 60mv/decade by using quantum-mechanical Band-to-Band Tunneling (BTBT).

Design of Low Power Integrated CMOS Potentiometric Biosensor for Direct Electronic Detection of DNA Hybridization

2014 ◽  
Vol 67 (1) ◽  
Author(s):  
Wong How Hwan ◽  
Vinny Lam Siu Fan ◽  
Yusmeeraz Yusof
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Dna Hybridization ◽  
Point Of Care ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Channel Length ◽  
Electrical Signal ◽  
Oxide Semiconductor ◽  
Detection Circuit

The purpose of this research is to design a low power integrated complementary metal oxide semiconductor (CMOS) detection circuit for charge-modulated field-effect transistor (CMFET) and it is used for the detection of deoxyribonucleic acid (DNA) hybridization. With the available CMOS technology, it allows the realization of complete systems which integrate the sensing units and transducing elements in the same device. Point-of-care (POC) testing device is a device that allows anyone to operate anywhere and obtain immediate results. One of the important features of POC device is low power consumption because it is normally battery-operated. The power consumption of the proposed integrated CMOS detection circuit requires only 14.87 mW. The detection circuit will amplify the electrical signal that comes from the CMFET to a specified level in order to improve the recording characteristics of the biosensor. Self-cascode topology was used in the drain follower circuit in order to reduce the channel length modulation effect. The proposed detection circuit was designed with 0.18µm Silterra CMOS fabrication process and simulated under Cadence Simulation Tool. 

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