scholarly journals 10-GHz Fully Differential Sallen–Key Lowpass Biquad Filters in 55nm SiGe BiCMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 563
Author(s):  
Francesco Centurelli ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Pasquale Tommasino ◽  
Alessandro Trifiletti
Keyword(s):  
Communication Systems ◽  
Power Efficiency ◽  
High Speed ◽  
Closed Loop ◽  
Dynamic Range ◽  
Data Converters ◽  
Fully Differential ◽  
Biquad Filter ◽  
Bicmos Technology ◽  
Sige Bicmos

Multi-GHz lowpass filters are key components for many RF applications and are required for the implementation of integrated high-speed analog-to-digital and digital-to-analog converters and optical communication systems. In the last two decades, integrated filters in the Multi-GHz range have been implemented using III-V or SiGe technologies. In all cases in which the size of passive components is a concern, inductorless designs are preferred. Furthermore, due to the recent development of high-speed and high-resolution data converters, highly linear multi-GHz filters are required more and more. Classical open loop topologies are not able to achieve high linearity, and closed loop filters are preferred in all applications where linearity is a key requirement. In this work, we present a fully differential BiCMOS implementation of the classical Sallen Key filter, which is able to operate up to about 10 GHz by exploiting both the bipolar and MOS transistors of a commercial 55-nm BiCMOS technology. The layout of the biquad filter has been implemented, and the results of post-layout simulations are reported. The biquad stage exhibits excellent SFDR (64 dB) and dynamic range (about 50 dB) due to the closed loop operation, and good power efficiency (0.94 pW/Hz/pole) with respect to comparable active inductorless lowpass filters reported in the literature. Moreover, unlike other filters, it exploits the different active devices offered by commercial SiGe BiCMOS technologies. Parametric and Monte Carlo simulations are also included to assess the robustness of the proposed biquad filter against PVT and mismatch variations.

scholarly journals A 5GS/s 8-bit ADC with Self-Calibration in 0.18 μm SiGe BiCMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 253
Author(s):  
Dong Wang ◽  
Jian Luan ◽  
Xuan Guo ◽  
Lei Zhou ◽  
Danyu Wu ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Dynamic Performance ◽  
Open Loop ◽  
Total Power ◽  
Least Significant Bit ◽  
Analog To Digital ◽  
Self Calibration ◽  
Differential Nonlinearity ◽  
Bicmos Technology ◽  
Sige Bicmos

A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in 0.18 μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix-4. An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance requirement. The on-chip self-calibration technique is introduced to compensate the interleaving mismatches between two sub-ADCs. Measurement results show that the spurious free dynamic range (SFDR) stays above 44.8 dB with a peak of 53.52 dB, and the effective number of bits (ENOB) is greater than 5.8 bit with a maximum of 6.97 bit up to 2.5 GS/s. The ADC exhibits a differential nonlinearity (DNL) of -0.31/+0.23 LSB (least significant bit) and an integral nonlinearity (INL) of -0.68/+0.68 LSB, respectively. The chip occupies an area of 3.9 × 3.6 mm2, consumes a total power of 2.8 W, and achieves a figure of merit (FoM) of 10 pJ/conversion step.

Low-power 8-bit 5-GS/s digital-to-analog converter for multi-gigabit wireless transceivers

2012 ◽  
Vol 4 (3) ◽  
pp. 275-282 ◽  
Author(s):  
Behnam Sedighi ◽  
Mahdi Khafaji ◽  
Johann Christoph Scheytt
Keyword(s):  
Low Power ◽  
High Speed ◽  
Wireless Transceivers ◽  
Digital To Analog Converter ◽  
Bicmos Technology ◽  
Analog Converter ◽  
Sige Bicmos ◽  
Digital To Analog ◽  
On Chip ◽  
Binary Weighted

We present a method to realize a low-power and high-speed digital-to-analog converter (DAC) for system-on-chip applications. The new method is a combination of binary-weighted current cells and R-2R ladder and is specially suited for modern BiCMOS technologies. A prototype 5 GS/s DAC is implemented in 0.13 μm SiGe BiCMOS technology. The DAC dissipates 26 mW and provides an SFDR higher than 48 dB for output frequencies up to 1 GHz.

Analysis and Design of a Linear Digital Programmable Gain Amplifier in a 0.13 µm SiGe BiCMOS technology

Frequenz ◽  
2017 ◽  
Vol 71 (3-4) ◽  
Author(s):  
Xuan-Quang Du ◽  
Anselm Knobloch ◽  
Markus Grözing ◽  
Matthias Buck ◽  
Manfred Berroth
Keyword(s):  
Harmonic Distortion ◽  
Gain Control ◽  
Step Size ◽  
Analysis And Design ◽  
Fully Differential ◽  
Gain Error ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Programmable Gain Amplifier ◽  
Programmable Gain

AbstractThis paper presents the analysis and the design of a fully-differential digital programmable gain amplifier (PGA) in a 0.13 µm BiCMOS technology. The PGA has a gain control range of 31 dB with 1 dB gain step size and consumes 284 mW from a 3.6 V power supply. At a maximum gain of 25 dB, the PGA exhibits a 3-dB bandwidth of 10.1 GHz. The measured gain error for all 32 possible gain settings is between –0.19/+0.46 dB at 1 GHz. Up to 13 GHz the third harmonic distortion

scholarly journals A 5–50 GHz SiGe BiCMOS Linear Transimpedance Amplifier with 68 dBΩ Differential Gain towards Highly Integrated Quasi-Coherent Receivers

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2349
Author(s):  
Guillermo Silva Valdecasa ◽  
Jose A. Altabas ◽  
Monika Kupska ◽  
Jesper Bevensee Jensen ◽  
Tom K. Johansen
Keyword(s):  
System Integration ◽  
High Speed ◽  
Direct Detection ◽  
Scale Up ◽  
Gain Control ◽  
Point System ◽  
Cell Stage ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Coherent Receivers

Quasi-coherent optical receivers have recently emerged targeting access networks, offering improved sensitivity and reach over direct-detection schemes at the expense of a higher receiver bandwidth. Higher levels of system integration together with sufficiently wideband front-end blocks, and in particular high-speed linear transimpedance amplifiers (TIAs), are currently demanded to reduce cost and scale up receiver data rates. In this article, we report on the design and testing of a linear TIA enabling high-speed quasi-coherent receivers. A shunt-feedback loaded common-base topology is adopted, with gain control provided by a subsequent Gilbert cell stage. The circuit was fabricated in a commercial 130 nm SiGe BiCMOS technology and has a bandpass characteristic with a 3 dB bandwidth in the range of 5–50 GHz. A differential transimpedance gain of 68 dBΩ was measured, with 896 mVpp of maximum differential output swing at the 1 dB compression point. System experiments in a quasi-coherent receiver demonstrate an optical receiver sensitivity of −30.5 dBm (BER = 1 × 10−3) at 10 Gbps, and −26 dBm (BER = 1 × 10−3) at 25 Gbps. The proposed TIA represents an enabling component towards highly integrated quasi-coherent receivers.

scholarly journals An Improved All-Digital Background Calibration Technique for Channel Mismatches in High Speed Time-Interleaved Analog-to-Digital Converters

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 73
Author(s):  
Van-Thanh Ta ◽  
Van-Phuc Hoang ◽  
Van-Phu Pham ◽  
Cong-Kha Pham
Keyword(s):  
Communication Systems ◽  
High Speed ◽  
Dynamic Range ◽  
Analog To Digital Converters ◽  
Background Calibration ◽  
Calibration Technique ◽  
Analog To Digital ◽  
Digital Background Calibration ◽  
Field Programmable ◽  
Time Interleaved

The time-interleaved analog-to-digital converters (TIADCs), performance is seriously affected by channel mismatches, especially for the applications in the next-generation communication systems. This work presents an improved all-digital background calibration technique for TIADCs by combining the Hadamard transform for calibrating gain and timing mismatches and averaging for offset mismatch cancellation. The numerical simulation results show that the proposed calibration technique completely suppresses the spurious images due to the channel mismatches at the output spectrum, which increases the spurious-free dynamic range (SFDR) and signal-to-noise and distortion ratio (SNDR) by 74 dB and 43.7 dB, respectively. Furthermore, the hardware co-simulation on the field programmable gate array (FPGA) platform is performed to confirm the effectiveness of the proposed calibration technique. The simulation and experimental results clarify the improvement of the proposed calibration technique in the TIADC’s performance.

scholarly journals Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1058
Author(s):  
Samuel B.S. Lee ◽  
Hang Liu ◽  
Kiat Seng Yeo ◽  
Jer-Ming Chen ◽  
Xiaopeng Yu
Keyword(s):  
Dynamic Range ◽  
Third Order ◽  
Transimpedance Amplifiers ◽  
Variable Gain ◽  
Gain Variation ◽  
Bicmos Technology ◽  
Capacitive Load ◽  
Sige Bicmos ◽  
Amplifier Stage ◽  
On Chip

This paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode preamplifier stage and a cascaded amplifier stage with bias-controlled gain-variation and third-order interleaving feedback. The designs have wide measured transimpedance gain ranges of 24.5–60.6 dBΩ and 27.8–62.8 dBΩ with bandwidth above 6.42 GHz and 5.22 GHz for DVGTIA designs 1 and 2 respectively. The core power consumptions are 30.7 mW and 27.5 mW from a 1.8 V supply and the input referred noise currents are 10.3 pA/√Hz and 21.7 pA/√Hz. The DVGTIA designs 1 and 2 have a dynamic range of 40.4 µA to 3 mA and 76.8 µA to 2.7 mA making both suitable for real photodetectors with an on-chip photodetector capacitive load of 250 fF. Both designs are compact with a core area of 100 µm × 85 µm.

An E-band Variable Gain Amplifier with 24 dB-control range and 80 to 100 GHz 1 dB bandwidth in SiGe BiCMOS technology

Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Francesco Centurelli ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Pasquale Tommasino ◽  
Alessandro Trifiletti
Keyword(s):  
Dynamic Range ◽  
Gain Control ◽  
Variable Gain Amplifier ◽  
Control Range ◽  
Variable Gain ◽  
Bicmos Technology ◽  
Commercial Technology ◽  
Sige Bicmos ◽  
Analysis Design

Abstract Analysis, design, and characterization of an E-band Variable Gain Amplifier (VGA) in SiGe BiCMOS commercial technology is presented. VGA topologies are compared in terms of their capability to contribute to receiver linearity and dynamic range. The proposed VGA is based on a Gilbert multiplier cell exploiting current cancellation to enhance control range and linearity. A 1 dB bandwidth ranging from 80 to 100 GHz, a 24 dB gain control range and a −11.5 dBm input 1 dB compression point have been measured.

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