scholarly journals Wide-Supply-Voltage-Range CMOS Bandgap Reference for In Vivo Wireless Power Telemetry

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2986 ◽  
Author(s):  
Ruhaifi Bin Abdullah Zawawi ◽  
Wajahat H. Abbasi ◽  
Seung-Hwan Kim ◽  
Hojong Choi ◽  
Jungsuk Kim

The robustness of the reference circuit in a wide range of supply voltages is crucial in implanted devices. Conventional reference circuits have demonstrated a weak performance over wide supply ranges. Channel-length modulation in the transistors causes the circuit to be sensitive to power supply variation. To solve this inherent problem, this paper proposes a new output-voltage-line-regulation controller circuit. When a variation occurs in the power supply, the controller promptly responds to the supply deviation and removes unwanted current in the output path of the reference circuit. The proposed circuit was implemented in a 0.35-μm SK Hynix CMOS standard process. The experimental results demonstrated that the proposed reference circuit could generate a reference voltage of 0.895 V under a power supply voltage of 3.3 V, line regulation of 1.85 mV/V in the supply range of 2.3 to 5 V, maximum power supply rejection ratio (PSRR) of −54 dB, and temperature coefficient of 11.9 ppm/°C in the temperature range of 25 to 100 °C.

2014 ◽  
Vol 989-994 ◽  
pp. 1165-1168
Author(s):  
Qian Neng Zhou ◽  
Yun Song Li ◽  
Jin Zhao Lin ◽  
Hong Juan Li ◽  
Chen Li ◽  
...  

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.


2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.


2004 ◽  
Vol 39 (1) ◽  
pp. 252-255 ◽  
Author(s):  
J. Doyle ◽  
Y.J. Lee ◽  
Y.-B. Kim ◽  
H. Wilsch ◽  
F. Lombardi

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2028
Author(s):  
Ruhaifi Bin Abdullah Zawawi ◽  
Hojong Choi ◽  
Jungsuk Kim

This paper presents a fully integrated voltage-reference circuit for implantable devices such as retinal implants. The recently developed retinal prostheses require a stable supply voltage to drive a high-density stimulator array. Accordingly, a voltage-reference circuit plays a critical role in generating a constant reference voltage, which is provided to a low-voltage-drop regulator (LDO), and filtering out the AC ripples in a power-supply rail after rectification. For this purpose, we use a beta-multiplier voltage-reference architecture to which a nonlinear current sink circuit is added, to improve the supply-independent performance drastically. The proposed reference circuit is fabricated using the standard 0.35 µm technology, along with an LDO that adopts an output ringing compensation circuit. The novel reference circuit generates a reference voltage of 1.37 V with a line regulation of 3.45 mV/V and maximum power-supply rejection ratio (PSRR) of −93 dB.


Author(s):  
Anass SLAMTI ◽  
Youness MEHDAOUI ◽  
Driss CHENOUNI ◽  
Zakia LAKHLIAI

<span lang="EN-US">A sub-1V opamp based β-multiplier CMOS bandgap voltage reference (BGVR) with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed in this paper. A current mode regulator scheme is inserted to isolate the supply voltage of the operational amplifier (opamp) and the supply voltage of the BGVR core from the supply voltage source in order to reduce ripple sensitivity and to achieve a high PSRR. The proposed circuit is designed and simulated in 0.18-μm standard CMOS technology. The proposed voltage reference delivers an output voltage of 634.6mV at 27°C. Tthe measurement temperature coefficient is 22,3ppm/°C over temperature range -40°C to 140°C, power supply rejection ratio is -93dB at 10kHz and -71dB at 1MHz and a line regulation of 104μV/V is achieved over supply voltage range 1.2V to 1.8V. The layout area of the proposed circuit is 0.0337mm<sup>2</sup>. The proposed sub-1V bandgap voltage reference can be used as an internal voltage reference in low power LDO regulators and switching regulators.</span>


Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2037 ◽  
Author(s):  
Jung-Hwan Lee ◽  
Sung-Jun Park ◽  
Sang-Kil Lim

Considerable efforts are being made to reduce CO2 emissions and thereby solve the problems of environmental pollution and global warming. Technologies for environmentally friendly transportation are being developed using batteries. In particular, with the increase in urbanization and one-person households, e-mobility products are drawing increasing attention as short-distance transportation devices. Among these vehicles, personal mobility devices (PMDs) are receiving attention as new transportation devices that are simple to operate. This paper proposes a new multilevel charging system that is advantageous in responding to the charging voltage specifications of various mobile devices with a single charging system while ensuring a low charging current ripple. The proposed diode-parallel multilevel converter consists of an independent Buck converter in series. The switch of the buck converter is configured at the negative terminal of the input power source so that the gate amplifier voltage is used as the power supply voltage; it can therefore be simply configured without a separate gate amplifier power supply. In addition, it is improved so as to have a wider charging voltage range in a low output voltage region and a better efficiency than the existing diode series multilevel converter. To verify the feasibility of the proposed system, simulations were performed using the software PowerSIM(PSIM), and, in order to verify the validity, a prototype charging system was fabricated to compare and analyze losses according to operating conditions.


2011 ◽  
Vol E94-C (6) ◽  
pp. 1072-1075
Author(s):  
Tadashi YASUFUKU ◽  
Yasumi NAKAMURA ◽  
Zhe PIAO ◽  
Makoto TAKAMIYA ◽  
Takayasu SAKURAI

2016 ◽  
Vol E99.C (10) ◽  
pp. 1219-1225
Author(s):  
Masahiro ISHIDA ◽  
Toru NAKURA ◽  
Takashi KUSAKA ◽  
Satoshi KOMATSU ◽  
Kunihiro ASADA

1993 ◽  
Vol 29 (15) ◽  
pp. 1324 ◽  
Author(s):  
L.E. Larson ◽  
M.M. Matloubian ◽  
J.J. Brown ◽  
A.S. Brown ◽  
M. Thompson ◽  
...  

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