scholarly journals Thermal Analysis of Energy Storage Capacity According to Thickness of Nickel/Chromium Alloy Layer

Energies ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3217
Author(s):  
Yonghyeon Kim ◽  
Hyeokjoo Choi ◽  
Seokhun Kwon ◽  
Seokwon Lee ◽  
Hyunil Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Storage Capacity ◽  
Infrared Camera ◽  
Rf Magnetron Sputtering ◽  
Alloy Layer ◽  
Alloy Thin Film ◽  
Chromium Alloy ◽  
Rf Power ◽  
Nickel Chromium ◽  
Sputtering System

This paper examines a microconstruction consisting of nickel (Ni)/chromium (Cr) alloy thin-film. The total length of the microconstruction was 28 mm, the width was 0.2 mm, and the height was designed to be 1 μm. A thin-film of Ni/Cr alloy was co-sputtered on a silicon dioxide wafer patterned with photoresist via a RF magnetron sputtering system. The RF power ratios applied to the 4 inch target of Ni and Cr were 300 W:100 W (3:1), 300 W:150 W (2:1), and 150 W:150 W (1:1). The electrical resistance of the manufactured microconstruction was calculated and measured through Hall measurements. The temperature generated by applying 1–10 V to the microconstruction electrode was observed by using an infrared camera, and was summarized using a linear equation according to the power applied to each sample.

Synthesis and Characterization of Carbon Nitride Thin Film with Evidence of Nanodomes

2004 ◽  
Vol 843 ◽  
Author(s):  
S. Chowdhury ◽  
M. T. Laugier
Keyword(s):  
Thin Film ◽  
Deposition Temperature ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Sputtering System

ABSTRACTWe have reported the synthesis of carbon nitride thin films with evidence of formation of carbon nanodomes over a range of substrate temperature from 50 °C to 550 °C. An RF magnetron sputtering system was used for depositing carbon nitride films. The size of the nanodomes can be controlled by deposition temperature and increases from 40–80 nm at room temperature to 200–400 nm at high temperature (550 °C). Microstructural characterization was performed by AFM. Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 20 mΩ-cm were found for nanodomes of size 40–80 nm falling to 6 m?-cm for nanodomes of size 200–400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9–22 GPa and 100–168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed.

Analysis of the Properties of Tungsten Carbide Thin Films According to the Sputtering Radio Frequency Power

2020 ◽  
Vol 12 (10) ◽  
pp. 1568-1571
Author(s):  
Seokwon Lee ◽  
Jung Hyun Kim ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Tungsten Carbide ◽  
Rf Magnetron Sputtering ◽  
Sem Analysis ◽  
Glass Substrates ◽  
Frequency Power ◽  
Scanning Electron ◽  
Sputtering System

In this study, we investigated characteristics of tungsten carbide thin film according to carbon and tungsten ratio. Tungsten carbide thin film was co-sputtered on silicon substrate and glass substrates using an RF magnetron sputtering system. To analyze the characteristics according to the composition ratio of the tungsten carbide thin film, the RF powers of carbon/tungsten target were divided into 100 W/100 W, 125 W/75 W, 150 W/50 W, and 175 W/25 W, respectively. Hall measurement and 4 points probes were used to measure electrical properties of the tungsten carbide thin films. Raman and field emission scanning electron microscope (FE-SEM) analysis were performed.

Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets

2007 ◽  
Vol 544-545 ◽  
pp. 495-498 ◽  
Author(s):  
Akira Watazu ◽  
Katsuhiko Kimoto ◽  
Sonoda Tsutomu ◽  
Kinya Tanaka ◽  
Tomoji Sawada ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Titanium Implants ◽  
Rf Power ◽  
Dc Magnetron Sputtering ◽  
Dc Power ◽  
Sputtering Power ◽  
Titanium Target ◽  
Sputtering System

Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.

Spectroscopic Ellipsometry Study on HfO2 Thin Films Deposited at Different RF Powers

2011 ◽  
Vol 287-290 ◽  
pp. 2165-2168 ◽  
Author(s):  
Wen Ting Liu ◽  
Zheng Tang Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Interfacial Layer ◽  
Rf Magnetron Sputtering ◽  
Interface Layer ◽  
Rf Power ◽  
Si Substrate ◽  
Structured Model ◽  
Transmission Electron

HfO2thin films were prepared by radio frequency (RF) magnetron sputtering at different RF powers. The influence of RF power on optical properties of HfO2thin films were investigated by spectroscopic ellipsometry (SE) toghther with high-resolution transmission electron microscopy (HR-TEM) and Fourier transform infrared spectroscopy (FTIR). The results show that there is a SiO2interface layer between HfO2thin film and Si substrate. A four layer structured model consisting of SiO2interfacial layer was used to fit the SE data. With the increasing RF power, the refractive index of the HfO2thin films increases firstly and then decreases and, the extinction coefficient of the HfO2thin films increases little.

Pressure Dependence of AZO Film Deposited by RF Powered Magnetron Sputtering System

2015 ◽  
Vol 1119 ◽  
pp. 29-33
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie Mani ◽  
Lam Mui Li ◽  
Umar Faruk Shuib ◽  
Saafie Salleh ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Working Pressure ◽  
High Transparency ◽  
Transparent Films ◽  
Argon Flow ◽  
Sputtering System

This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performed with RF power of 100 Watt and the deposition times were fixed at 40 minutes. The argon pressures were varied from 10 sccm to 30 sccm in order to achieve different working pressure during deposition in order to study the effect of pressure towards characteristic of films. AZO thin films on different argon pressure were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency above 80 percent were achieved. The film deposited at 10 sccm argon flow exhibit the highest growth rate at 7.9 nm/m, highest intensity XRD peak with higher crystalline quality and lowest resistivity that is 2.7 x 10ˉ2Ω cm .

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