scholarly journals Impact of Annealing Temperature on the Morphological, Optical and Photoelectrochemical Properties of Cauliflower-like CdSe0.6Te0.4 Photoelectrodes; Enhanced Solar Cell Performance

2021 ◽  
Vol 22 (21) ◽  
pp. 11610
Author(s):  
Gajanan S. Ghodake ◽  
Dae-Young Kim ◽  
Surendra K. Shinde ◽  
Deepak P. Dubal ◽  
Hemraj M. Yadav ◽  
...  
Keyword(s):  
Solar Cell ◽  
Annealing Temperature ◽  
Photoelectrochemical Properties ◽  
Solar Cell Performance ◽  
Annealing Temperatures ◽  
Peak Intensity ◽  
Pure Phase ◽  
Cadmium Selenium ◽  
Xps Study ◽  
The Impact

We are reporting on the impact of air annealing temperatures on the physicochemical properties of electrochemically synthesized cadmium selenium telluride (CdSe0.6Te0.4) samples for their application in a photoelectrochemical (PEC) solar cell. The CdSe0.6Te0.4 samples were characterized with several sophisticated techniques to understand their characteristic properties. The XRD results presented the pure phase formation of the ternary CdSe0.6Te0.4 nanocompound with a hexagonal crystal structure, indicating that the annealing temperature influences the XRD peak intensity. The XPS study confirmed the existence of Cd, Se, and Te elements, indicating the formation of ternary CdSe0.6Te0.4 compounds. The FE-SEM results showed that the morphological engineering of the CdSe0.6Te0.4 samples can be achieved simply by changing the annealing temperatures from 300 to 400 °C with intervals of 50 °C. The efficiencies (ƞ) of the CdSe0.6Te0.4 photoelectrodes were found to be 2.0% for the non-annealed and 3.1, 3.6, and 2.5% for the annealed at 300, 350, and 400 °C, respectively. Most interestingly, the PEC cell analysis indicated that the annealing temperatures played an important role in boosting the performance of the photoelectrochemical properties of the solar cells.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

scholarly journals The impact of cold deformation, annealing temperatures and chemical assays on the mechanical properties of platinum

2010 ◽  
Vol 46 (1) ◽  
pp. 51-57 ◽  
Author(s):  
B. Trumic ◽  
D. Stankovic ◽  
A. Ivanovic
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Annealing Temperature ◽  
Cold Deformation ◽  
Platinum Metals ◽  
Deformation Degree ◽  
Annealing Temperatures ◽  
Flow Limit ◽  
The Impact ◽  
Constant Deformation

In order to form the necessary data base on platinum and platinum metals, certain tests were carried out on platinum samples of different purity of 99.5%, 99.9% and 99.99%. The degree of cold deformation, annealing temperature and chemical assays were tested as well as their impact on the mechanical properties of platinum. The Vickers hardness (HV) values were determined with different deformation degree, starting from annealing temperatures for platinum of different purity and tensile strength (Rm), flow limit (Rp0,2) and elongation (A) in the function of annealing temperatures and annealing time at a constant deformation degree.

Variations in the Effects of Implanting Al at Different Concentrations into SiC

2006 ◽  
Vol 527-529 ◽  
pp. 831-834
Author(s):  
Kenneth A. Jones ◽  
T.S. Zheleva ◽  
Pankaj B. Shah ◽  
Michael A. Derenge ◽  
Jaime A. Freitas ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Epitaxial Layer ◽  
Partial Dislocation ◽  
Annealing Temperature ◽  
Stacking Faults ◽  
Sheet Resistivity ◽  
Complex Defect ◽  
Annealing Temperatures ◽  
Peak Intensity ◽  
The Difference

SiC samples implanted at 600°C with 1018, 1019, or 1020 cm-3 of Al to a depth of ~ 0.3 μm and annealed with a (BN)AlN cap at temperatures ranging from 1300 – 1700°C were studied. Some of the samples have been co-implanted with C or Si. They are examined using Hall, sheet resistivity, CL, EPR, RBS, and TEM measurements. In all instances the sheet resistance is larger than a comparably doped epitaxial layer, with the difference being larger for samples doped to higher levels. The results suggest that not all of the damage can be annealed out, as stable defects appear to form, and a greater number or more complex defects form at the higher concentrations. Further, the defects affect the properties of the Al as no EPR peak is detected for implanted Al, and the implanted Al reduces the AlSi peak intensity in bulk SiC. CL measurements show that there is a peak near 2.9941 eV that disappears only at the highest annealing temperature suggesting it is associated with a complex defect. The DI peaks persist at all annealing temperatures, and are possibly associated with a Si terminated partial dislocation. TEM analyses indicate that the defects are stacking faults and/or dislocations, and that these faulted regions can grow during annealing. This is confirmed by RBS measurements.

scholarly journals Upper limit to the photovoltaic efficiency of imperfect crystals from first principles

2020 ◽  
Vol 13 (5) ◽  
pp. 1481-1491 ◽  
Author(s):  
Sunghyun Kim ◽  
José A. Márquez ◽  
Thomas Unold ◽  
Aron Walsh
Keyword(s):  
Solar Cell ◽  
Point Defects ◽  
First Principles ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Photovoltaic Efficiency ◽  
Upper Limit ◽  
The Impact

An approach is proposed to predict the impact of point defects on solar cell performance.

Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method

2016 ◽  
Vol 688 ◽  
pp. 12-17 ◽  
Author(s):  
In Young Kim ◽  
Ju Yeon Lee ◽  
Uma V. Ghorpade ◽  
M.P. Suryawanshi ◽  
Dong Seon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Annealing Temperature ◽  
Cell Performance ◽  
Solar Cell Performance

Effects of TCO/a-Si:C:H Interface Defect States on p-i-n a-Si:H Solar Cell Performance

1994 ◽  
Vol 336 ◽  
Author(s):  
Franc Smole ◽  
Marko Topič
Keyword(s):  
Solar Cell ◽  
Surface States ◽  
Potential Drop ◽  
Defect States ◽  
Solar Cell Performance ◽  
Photoelectric Properties ◽  
Interface Defect ◽  
Work Function Difference ◽  
The Impact ◽  
Defect Densities

ABSTRACTTo explain realistic circumstances with regard to energy band profiles at the TCO/a-Si:C:H heterojunction, the ASPIN computer simulation has been used. Numerical calculations indicate that the increased interface defect densities result in a steep potential drop inside the interface region, while the rest of the work function difference extends into the p-layer. The detrimental effect of a-Si:C:H partial oxidation has been simulated by additionally increased density of states at a-Si:C:H surface, and its influence on the potential barrier has been analyzed. The impact of both TCO/a-Si:C:H interface states and a-Si:C:H surface states on the photoelectric properties of p-i-n a-Si:H solar cell is discussed, and a possible improvement of Voc is envisaged.

scholarly journals Graphene-Au Film Synthesized from GrO in Au-Aquaeus Solution as Counter Electrode For DSSC Application

2019 ◽  
Vol 7 (2) ◽  
pp. 24
Author(s):  
Marjoni Imamora Ali Umar
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Counter Electrode ◽  
Annealing Temperature ◽  
Zno Nanorods ◽  
Annealing Treatment ◽  
Thermal Reduction ◽  
Multilayer Graphene ◽  
Solar Cell Performance ◽  
Probe Measurements

The study on the optical, electrical properties of multilayer graphene (MLG) obtained by thermal-reduction of graphene oxide (GrO) which was synthesized directly by mixing graphite oxide (GO) flake in 0.005, 0.01, 0.015, and 0.02 M of Au aqueous solution has been successfully performed. The resultant  GrO was subjected to an annealing temperature of 200°C, 400°C, 500°C for 1h to obtain MLG, and G-Au2x, G-Au4x, and G-Au5x (x=.0.005, 0.01, 0.015, and 0.02). The resultant samples were then characterized using FESEM, UV-VIS, four-point probe measurements to study its morphology, optical, and electrical properties. The transmission G-Au increase and its sheet resistant decrease as an increase of annealing temperature. Besides, the annealing treatment was then achieved of its microstructure which is expected may be used as a counter electrode in solar cell applications. The best DSSC devices with Quartz/FTO/ZnO Nanorods/Dye/G-Au50.01/Quartz structures have resulted in current-density, Voc, and solar cell performance of 0.1 mA/cm2, 0.42 V, and 0.01%, respectively.

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