scholarly journals Clinoenstatite/Tantalum Coating for Enhancement of Biocompatibility and Corrosion Protection of Mg Alloy

2020 ◽  
Vol 11 (2) ◽  
pp. 26 ◽  
Author(s):  
Hamid Reza Bakhsheshi-Rad ◽  
Aliakbar Najafinezhad ◽  
Esah Hamzah ◽  
Ahmad Fauzi Ismail ◽  
Filippo Berto ◽  
...  

Biodegradable Mg alloys have appeared as the most appealing metals for biomedical applications, particularly as temporary bone implants. However, issues regarding high corrosion rate and biocompatibility restrict their application. Hence, in the present work, nanostructured clinoenstatite (CLT, MgSiO3)/tantalum nitride (TaN) was deposited on the Mg-Ca-Zn alloy via electrophoretic deposition (EPD) along with physical vapor deposition (PVD) to improve the corrosion and biological characteristics of the Mg-Ca-Zn alloy. The TaN intermediate layer with bubble like morphology possessed a compact and homogenous structure with a thickness of about 950 nm while the thick CLT over-layer (~15 μm) displayed a less compact structure containing nano-porosities as well as nanoparticles with spherical morphology. The electrochemical tests demonstrated that the as prepared CLT/TaN film is able to substantially increase the anticorrosion property of Mg-Ca-Zn bare alloy. Cytocompatibility outcomes indicated that formation of CLT and TaN on the Mg bare alloy surface enhanced cell viability, proliferation and growth, implying excellent biocompatibility. Taken together, the CLT/TaN coating exhibits appropriate characteristic including anticorrosion property and biocompatibility in order to employ in biomedical files.

2005 ◽  
Vol 59 (11) ◽  
pp. 1305-1309 ◽  
Author(s):  
David A. Heaps ◽  
Peter R. Griffiths

Surface-enhanced Raman spectra (SERS) of molecules separated by gas chromatography (GC) were measured off-line by condensing the analyte on a moving, liquid-nitrogen-cooled ZnSe window on which a 5 nm layer of silver had been formed by physical vapor deposition. After the components that eluted from the chromatograph had been deposited, the substrate was allowed to warm up to room temperature and transferred to the focus of a Raman microspectrometer where the spectrum of each component was measured. Band intensities in the spectrum of 3 ng of caffeine prepared in this way were approximately the same as in the spectrum of bulk caffeine. By making some logical assumptions, it was shown that identifiable GC/SERS spectra of 30 pg of many molecules could be measured over a 300 cm−1 region in real-time and that if an optimized substrate were used the minimum identifiable quantity could be reduced to 1 pg or less.


2018 ◽  
Vol 36 (4) ◽  
pp. 403-412 ◽  
Author(s):  
Hossein Olia ◽  
Reza Ebrahimi-Kahrizsangi ◽  
Fakhreddin Ashrafizadeh ◽  
Iman Ebrahimzadeh

AbstractPhysical vapor deposition (PVD) multilayered coatings with titanium nitride and chromium nitride top layers were deposited on UNS S17400 alloy in an attempt to improve the corrosion and corrosion-wear resistance of this stainless steel in corrosive environments. The coatings were produced in an industrial chamber by cathodic arc PVD on heat-treated and mechanically polished stainless steel specimens. The microstructures of the substrates and coatings were characterized by X-ray diffraction and scanning electron microscope equipped with an energy-dispersive X-ray spectroscopy system. To evaluate the corrosion and corrosion-wear resistance, reciprocating-sliding tribometer and electrochemical tests were conducted in 3.5% NaCl solution. The results showed that nitride coatings possess, in general, better corrosion and corrosion-wear resistance compared with bare S17400 substrates. Specimens with CrN top coating revealed a typical compact structure and superior corrosion resistance compared with substrate and TiN top coating. However, the sliding motion damaged the surface with some microcracks on the coating, which act as the diffusion channels for NaCl solution; both TiN and CrN top coats experienced approximately similar behavior in corrosion-wear open-circuit potential testing.


Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 5049
Author(s):  
Zhi Li ◽  
Ye Tian ◽  
Chao Teng ◽  
Hai Cao

The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.


Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.


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