scholarly journals Study of the Catalytic Strengthening of a Vacuum Carburized Layer on Alloy Steel by Rare Earth Pre-Implantation

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3420 ◽  
Author(s):  
Li ◽  
Li ◽  
Xing ◽  
Wang ◽  
Huang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Diffusion Coefficient ◽  
Rare Earth ◽  
Ion Implantation ◽  
Alloy Steel ◽  
Carbon Diffusion ◽  
High Energy ◽  
Rare Earth Ion ◽  
X Ray ◽  
Carburized Layer

Conventional carburizing has disadvantages, such as high energy consumption, large deformation of parts, and an imperfect structure of the carburizing layer. Hence, a rare earth ion pre-implantation method was used to catalyze and strengthen the carburized layer of 20Cr2Ni4A alloy steel. In this study, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive microanalysis (EDS), transmission electron microscopy (TEM), and Rockwell/Vickers hardness testing were used to analyze the microstructure, phase composition, retained austenite content, hardness, carburized layer thickness, and carbon diffusion. The results showed that lanthanum and yttrium ions implanted into the 20Cr2Ni4A steel formed solid solutions of rare earth ions and a large number of dislocations, which improved the diffusion coefficient of carbon elements on the carburized surface and the uniformity of the carbon distribution. Simultaneously, rare earth ion implantation improved the structure and hardness of the vacuum carburized layer. Compared to the lanthanum ion implantation, yttrium ion implantation caused the structure of the carburized layer to be finer, and the carbon diffusion coefficient increased by 1.17 times; in addition, the surface hardness of the carburized layer was 61.8 HRC.

scholarly journals Phytosynthetic Fabrication of Lanthanum Ion-Doped Nickel Oxide Nanoparticles Using Sesbania grandiflora Leaf Extract and Their Anti-Microbial Properties

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 124
Author(s):  
Srihasam Saiganesh ◽  
Thyagarajan Krishnan ◽  
Golla Narasimha ◽  
Hesham S. Almoallim ◽  
Sulaiman Ali Alhari ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Rare Earth ◽  
Nickel Oxide ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Nio Nanoparticles ◽  
X Ray ◽  
Sesbania Grandiflora

Over the past few years, the photogenic fabrication of metal oxide nanoparticles has attracted considerable attention, owing to the simple, eco-friendly, and non-toxic procedure. Herein, we fabricated NiO nanoparticles and altered their optical properties by doping with a rare earth element (lanthanum) using Sesbania grandiflora broth for antibacterial applications. The doping of lanthanum with NiO was systematically studied. The optical properties of the prepared nanomaterials were investigated through UV-Vis diffuse reflectance spectra (UV-DRS) analysis, and their structures were studied using X-ray diffraction analysis. The morphological features of the prepared nanomaterials were examined by scanning electron microscopy and transmission electron microscopy, their elemental structure was analyzed by energy-dispersive X-ray spectral analysis, and their oxidation states were analyzed by X-ray photoelectron spectroscopy. Furthermore, the antibacterial action of NiO and La-doped NiO nanoparticles was studied by the zone of inhibition method for Gram-negative and Gram-positive bacterial strains such as Escherichia coli and Bacillus sublitis. It was evident from the obtained results that the optimized compound NiOLa-04 performed better than the other prepared compounds. To the best of our knowledge, this is the first report on the phytosynthetic fabrication of rare-earth ion Lanthanum (La3+)-doped Nickel Oxide (NiO) nanoparticles and their anti-microbial studies.

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation

2012 ◽  
Vol 730-732 ◽  
pp. 257-262
Author(s):  
Bruno Nunes ◽  
Sergio Magalhães ◽  
Nuno Franco ◽  
Eduardo Alves ◽  
Ana Paula Serro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Silicon Surfaces ◽  
Iron Ions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences of iron ions (up to 2x1017 cm-2). Implantation was followed by annealing treatments at temperatures from 550°C to 1000°C. The implanted surfaces were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and wettability tests. Then, samples were submitted to AFM-based nanowear tests. We observe an increase of both hidrophobicity and and wear resistance of the implanted silicon, indicating that ion implantation of Si can be a route to be deeper explored in what concerns tribomechanical improvement of Si.

scholarly journals Standard Hot Pressing as a Possible Solution to Obtain Dense K0.5Na0.5NbO3 Ceramic Doped by Er2O3 and Yb2O3

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4171 ◽  
Author(s):  
Paweł Rutkowski ◽  
Jan Huebner ◽  
Adrian Graboś ◽  
Dariusz Kata ◽  
Dariusz Grzybek ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Rare Earth ◽  
Phase Composition ◽  
Powder Mixture ◽  
Hot Pressing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Methods ◽  
Scanning Electron

In this study, the influence of the addition of rare earth oxides on the phase composition and density of KNN piezoelectric ceramics was investigated. The initial powders of Na2CO3 and K2CO3 were dried at 150 °C for 2 h. Then, a powder mixture for synthesis was prepared by adding a stoichiometric amount of Nb2O5 and 5 and 10 wt % overabundance of Na2CO3. All powders were mixed by ball-milling for 24 h and synthesized at 950 °C. The phase composition of the reaction bed was checked by means of X-ray diffraction (XRD). It had an appearance of tetragonal and monoclinic K0.5Na0.5NbO3 (KNN) phases. Then, 1 and 2 wt % of Er2O3 and Yb2O3, were added to the mixture. Green samples of 25 mm diameter and 3 mm thickness were prepared and sintered by hot pressing at 1000 °C for 2 h under 25 MPa pressure. The final samples were investigated via scanning electron microscopy (SEM)-energy-dispersive X-ray spectroscopy (EDS), XRD, Rietveld, and ultrasonic methods. Phase analysis showed tetragonal and orthorhombic KNN phases, and a contamination of (K2CO3·1.5H2O) was present. The obtained KNN polycrystals had a relative density above 95%. Texturing of the material was confirmed as a result of hot pressing.

Mechanochemical Synthesis of Intermetallic Compounds in the Gallium–Iridium System

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940067
Author(s):  
P. Vitiaz ◽  
N. Lyakhov ◽  
T. Grigoreva ◽  
E. Pavlov
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Mechanical Activation ◽  
Intermetallic Compounds ◽  
High Energy ◽  
Planetary Mill ◽  
X Ray Diffraction ◽  
X Ray ◽  
Active Liquid ◽  
Scanning Electron

The interaction between a solid inert metal Ir and an active liquid metal Ga during mechanical activation in a high-energy planetary mill is studied by X-ray diffraction and scanning electron microscopy with high-resolution energy dispersive X-ray microanalysis. The effect of mechanical activation on the formation of GaxIry intermetallic compounds and GaxIry/Ir composites and their solubility in acids was investigated. The subsequent extraction of Ga from intermetallic compounds and composites in the mixture of concentrated acids [Formula: see text] makes it possible to produce nanoscale Ir.

Synthesis, Morphology Control and Luminescent Properties of Rare Earth Ion-Doped CaWO4 Microstructures

2016 ◽  
Vol 16 (4) ◽  
pp. 4029-4034 ◽  
Author(s):  
Chunxia Liu ◽  
Lixia Yang ◽  
Dan Yue ◽  
Mengnan Wang ◽  
Lin Jin ◽  
...  
Keyword(s):  
Rare Earth ◽  
Uv Light ◽  
Luminescent Properties ◽  
Average Diameter ◽  
Rare Earth Ions ◽  
X Ray Diffraction ◽  
Hydrothermal Route ◽  
Rare Earth Ion ◽  
X Ray ◽  
Facile Hydrothermal Route

Rare earth ions (Tb3+, Eu3+) doped CaWO4 microstructures were synthesized by a facile hydrothermal route without using any templates and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectrum. The results indicate that the asprepared samples are well crystallized with scheelite structure of CaWO4, and the average diameter of the microstructures is 2∼4 μm. The morphology of CaWO4:Eu3+ microstructures can be controllably changed from microspheres to microflowers through altering the doping concentration of Eu3+ from 3% to 35%, and the microflowers are constructed by a number of CaWO4:Eu3+ nanoflakes. Under the excitation of UV light, the emission spectrum of CaWO4:Eu3+ is composed of the characteristics emission of Eu3+ 5D0-7FJ (J = 1, 2, 3, 4) transitions, and that of CaWO4:Tb3+ is composed of Tb3+ 5D4-7FJ (J = 6, 5, 4, 3) transitions. Both of the optimal doping concentrations of Tb3+ and Eu3+ in CaWO4 microstructures are about 5%.

Ion Implantation Defect Characterization by High-Resolution X-Ray Diffraction

1992 ◽  
Vol 262 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Lattice Strain ◽  
Crystalline Silicon ◽  
High Energy ◽  
Silicon Sample ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Defect

ABSTRACTHigh-energy ion-implantation is one of the roost critical processing steps regarding the formation of defects in mono-crystalline silicon. High- as well as low-doses implanted at various energies can result in relatively high residual defect concentrations after post-implantation annealing.Before annealing, the crystal lattice strain is mainly caused by the point defects. After annealing, the accommodation of substitutional impurities is the main origin of the residual lattice strain. High-Resolution X-ray Diffraction (HRXD) has been frequently used for the characterization of these structures. Dislocation loops formed during the high temperature step, however, cause enhanced diffuse X-ray scattering, which can dominate the measured X-ray intensity in conventional HRXD.Triple axis diffractometry is used in this study to analyze the size, type and location of defects in a boron implanted and rapid thermally annealed silicon sample.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

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