scholarly journals High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4271
Author(s):  
Alaleh Tajalli ◽  
Matteo Meneghini ◽  
Sven Besendörfer ◽  
Riad Kabouche ◽  
Idriss Abid ◽  
...  

The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (reference structure), and another based on a superlattice (SL). In particular, we show that: (i) the use of an SL allows us to push the vertical breakdown voltage above 1500 V on a 5 µm stack, with a simultaneous decrease in vertical leakage current, as compared to the reference GaN-based epi-structure using a thicker buffer thickness. This is ascribed to the better strain relaxation, as confirmed by X-Ray Diffraction data, and to a lower clustering of dislocations, as confirmed by Defect Selective Etching and Cathodoluminescence mappings. (ii) SL-based samples have significantly lower buffer trapping, as confirmed by substrate ramp measurements. (iii) Backgating transient analysis indicated that traps are located below the two-dimensional electron gas, and are related to CN defects. (iv) The signature of these traps is significantly reduced on devices with SL. This can be explained by the lower vertical leakage (filling of acceptors via electron injection) or by the slightly lower incorporation of C in the SL buffer, due to the slower growth process. SL-based buffers therefore represent a viable solution for the fabrication of high voltage GaN transistors on silicon substrate, and for the simultaneous reduction of trapping processes.

2019 ◽  
Vol 4 (1) ◽  
pp. 17-23 ◽  
Author(s):  
Sanjida Islam ◽  
Md. Selim Hossain ◽  
Md. Farhamdur Reza ◽  
Md. Mamunur Rashid

Due to concerns over the world’s energy necessity and environmental impact of mineral oil, these conditions induce many researchers to search for substitute sources for insulating oil. Alternatives insulating oil with biodegradable characteristics, environment friendly and presented in different countries including Bangladesh such as vegetable oils have been proposed for high voltage applications. In this paper, a relative measurement of breakdown voltage through experimental investigation of coconut, mustard, soybean, and palm oil and their blend (which is available in Bangladesh and cost effective) is presented. Break down voltage was measure with different electrode configuration by changing gap distance. The results show that the blend of (50% coconut oil + 50% palm oil) got high breakdown voltage in mushroom-mushroom electrode, and other side in plane-plane type pure soybean oil got high breakdown voltage, compared with transformer oil. The presented result illustrate that the proposed mixed oil provides better performance than the rise husk oil.


2005 ◽  
Vol 483-485 ◽  
pp. 969-972 ◽  
Author(s):  
Koji Nakayama ◽  
Yoshitaka Sugawara ◽  
Hidekazu Tsuchida ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
...  

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.


2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


2015 ◽  
Vol 51 (1) ◽  
pp. 104-106 ◽  
Author(s):  
Jiangfeng Du ◽  
Nanting Chen ◽  
Peilin Pan ◽  
Zhiyuan Bai ◽  
Liang Li ◽  
...  

Author(s):  
Luigi Balestra ◽  
Susanna Reggiani ◽  
Antonio Gnudi ◽  
Elena Gnani ◽  
Jagoda Dobrzynska ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document