scholarly journals Low-Power pH Sensor Based on Narrow Channel Open-Gated Al0.25Ga0.75N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5282
Author(s):  
Xianghong Yang ◽  
Jiapei Ao ◽  
Sichen Wu ◽  
Shenhui Ma ◽  
Xin Li ◽  
...  
Keyword(s):  
Low Power ◽  
Ph Sensor ◽  
Reducing Power ◽  
High Electron Mobility Transistor ◽  
Narrow Channel ◽  
Harsh Environments ◽  
High Electron ◽  
Ultra Low Power ◽  
Excellent Stability

pH sensors with low-power and strong anti-interference are extremely important for industrial online real-time detection. Herein, a narrow channel pH sensor based on Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) with package integrated Polydimethylsiloxane (PDMS) microchannels is proposed. The fabricated device has shown potential advantages in improving stability and reducing power consumption in response to pH changes of the solution. The performance of the pH sensor was demonstrated where the preliminary results showed an ultra-low power (<5.0 μW) at VDS = 1.0 V. Meanwhile, the sensitivity was 0.06 μA/V·pH in the range of pH = 2 to pH = 10, and the resolution of the sensor was 0.1 pH. The improvement in performance of the proposed sensor can be related to the narrow channel and microchannel, which can be attributed to better surface GaxOy in a microchannel with larger H+ and HO− concentration on the sensing surface during the detection process. The low-power sensor with excellent stability can be widely used in various unattended or harsh environments, and it is more conducive to integration and intelligence, which lays the foundation for online monitoring in vivo.

scholarly journals 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Cyrille Gardès ◽  
Sonia Bagumako ◽  
Ludovic Desplanque ◽  
Nicolas Wichmann ◽  
Sylvain Bollaert ◽  
...  
Keyword(s):  
Low Power ◽  
High Frequency ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Ultra Low Power ◽  
Great Ability ◽  
Dc Power ◽  
Drain Bias

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequenciesfT/fmaxof 100/125 GHz together with minimum noise figureNFmin=0.5 dB and associated gainGass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.

Transpermanent Magnetics Using Alternating Uniform Linear Stacks

2004 ◽  
Vol 127 (4) ◽  
pp. 679-687
Author(s):  
Larry Silverberg ◽  
Luis Duval
Keyword(s):  
Low Power ◽  
Permanent Magnets ◽  
Traditional Approach ◽  
Reducing Power ◽  
Ultra Low Power ◽  
Flow Rates ◽  
Recent Developments ◽  
Valve Control ◽  
Design And Testing ◽  
Laboratory Prototype

In this paper we apply recent developments in transpermanent magnetics to the problem of ultra-low-power valve control. Whereas the traditional approach to ultra-low-power valve control is based on latching mechanisms that turn off valves during inactive periods, in this paper we describe an approach that eliminates the need for latching mechanisms. Instead of latching mechanisms, the principles of transpermanent magnetics are employed to switch the states of permanent magnets; the use of permanent magnets instead of electromagnets eliminates power loads during inactive periods, thereby reducing power consumption to ultralow levels. The permanent magnets in a transpermanent magnet valve are configured in a stack. The relationships between the strength and number of permanent magnets in the stack and the stroke and resolution of the valve are developed. In this paper we show that the alternating uniform linear stack is well suited for digital process valves having a small number of states. Then in the paper we report on the design and testing of a laboratory prototype valve that uses an alternating uniform linear stack. The prototype valve had five states yielding a range of flow rates between 0 and 1.58m∕s with a resolution of 0.3m∕s. In this paper we find that transpermanent valves represent a promising valve technology for digital process valves.

Ultra-low power pH sensor powered by microbial fuel cells

2020 ◽  
Author(s):  
Nathaniel Brochu ◽  
Lingling Gong ◽  
Jesse Greener ◽  
Amine Miled
Keyword(s):  
Fuel Cells ◽  
Low Power ◽  
Microbial Fuel Cells ◽  
Ph Sensor ◽  
Ultra Low Power

Design of the Improved Accompanying Temperature Logger

2014 ◽  
Vol 989-994 ◽  
pp. 3015-3018
Author(s):  
Juan Guo ◽  
Shi Ying Liang ◽  
Zong Tao Yin
Keyword(s):  
Power Consumption ◽  
Energy Conservation ◽  
Low Power ◽  
Communication Protocol ◽  
Reducing Power ◽  
Experimental Tests ◽  
Low Power Consumption ◽  
Temperature Logger ◽  
Ultra Low Power

This paper describes research on some methods of reducing power consumption to reduce the volume accompanying logger. For the requirement of ultra-low power consumption and miniature, the design is described separately from the hardware and software, mainly including temperature detecting module, interface of communication, low current circuit hardware, energy conservation ,arouse from power down state, communication protocol, etc. The experimental tests for device prove that the research can achieve low power requirements.

Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

2017 ◽  
Vol 26 (1) ◽  
pp. 017304
Author(s):  
Ling Yang ◽  
Xiao-Wei Zhou ◽  
Xiao-Hua Ma ◽  
Ling Lv ◽  
Yan-Rong Cao ◽  
...  
Keyword(s):  
Low Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Plasma Effects ◽  
Electrical Reliability

scholarly journals AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085106 ◽  
Author(s):  
Ju-Young Pyo ◽  
Jin-Hyeok Jeon ◽  
Yumin Koh ◽  
Chu-young Cho ◽  
Hyeong-Ho Park ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ph Sensor ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

A LOW-NOISE LOW-POWER FRONT-END AMPLIFIER FOR NEURAL-RECORDING APPLICATIONS

2010 ◽  
Vol 22 (04) ◽  
pp. 301-306 ◽  
Author(s):  
Mohammad Hossein Zarifi ◽  
Javad Frounchi ◽  
Mohammad A. Tinati ◽  
Shahin Farshchi ◽  
Jack W. Judy
Keyword(s):  
Low Power ◽  
Heat Dissipation ◽  
Harmonic Distortion ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Fully Differential ◽  
Front End

Monitoring the electrical activities of a large number of neurons in vertebrates' central nervous system in vivo through hundreds of parallel channels without interferring in their natural functions is a neuroscientist's interest. Value of this information in both scientific and clinical contexts, especially in expansion of brain–computer interfaces, is extremely significant. Therefore, low-noise amplifiers are needed with filtering capability on the front end to amplify the desired signals and eliminate direct current baseline shifts. Hence, size and power consumption need to be minimized to reduce trauma and heat dissipation, which can result in tissue damage for human applications and the system needs to be implantable and wireless. The practical solution for developing such systems is system-on-a-chip, based on ultra-low-power mixed-mode and wideband RFIC designs. They, however, impose a number of challenges that may require nontraditional solutions. In this paper, we present a fully differential low-power low-noise preamplifier suitable for recording biological signals, from a few mHz up to 10 kHz. This amplifier has a bandpass filter that is tunable between 10 mHz and 10 kHz, and has been designed and simulated in a standard 90-nm CMOS process. The circuit consumes 10 μW from a 1.2 V supply and provides a gain of 40 dB and an output swing of ±0.5 V with a total harmonic distortion of less than 0.5%. The total input-referred noise level is 4.6 μV integrating the noise over 0.01 Hz to 10 kHz.

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