100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
Keyword(s):
Dc Power
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We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequenciesfT/fmaxof 100/125 GHz together with minimum noise figureNFmin=0.5 dB and associated gainGass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.
2017 ◽
Vol 7
(1)
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pp. 176
Keyword(s):
2009 ◽
Vol 1
(4)
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pp. 387-394
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Keyword(s):
2014 ◽
Vol 577
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pp. 615-619