scholarly journals Fabrication of Single-Phase Manganese Oxide Films by Metal-Organic Decomposition

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2338
Author(s):  
Kyung-Hwan Kim ◽  
Do Kyung Lee ◽  
Yun-Hyuk Choi
Keyword(s):  
Manganese Oxide ◽  
Calcination Temperature ◽  
Single Phase ◽  
Oxide Films ◽  
Solution Process ◽  
Precursor Solution ◽  
Inert Atmosphere ◽  
Metal Organic ◽  
Calcination Atmosphere ◽  
Organic Decomposition

Here, single-phase Mn2O3 and Mn3O4 films are successfully fabricated by a facile solution process based on metal-organic decomposition (MOD), for the first time. A formulated manganese 2-ethylhexanoate solution was used as an MOD precursor for the preparation of manganese oxide films. The difference in thermal decomposition behavior of precursor solution in air and inert atmospheres was observed, indicating that the calcination atmosphere is the main factor for controlling the valence of manganese oxide films. Significantly, the solution-coated films on substrates are found to be transformed into single-phase Mn2O3 and Mn3O4 films when they are calcinated under air and inert atmosphere, respectively. The film crystallinity was improved with increasing calcination temperature for both Mn2O3 and Mn3O4 films. In particular, it is noted that the grains of Mn2O3 film were somewhat linearly grown in air, while those of Mn3O4 film exhibited the drastic growth in Ar with an increase of calcination temperature.

Low Temperature Growth of CaTiO3: Pr Phosphor Thin Film on Flexible Substrate by Photo- induced Chemical Solution Process

2012 ◽  
Vol 1454 ◽  
pp. 189-194 ◽  
Author(s):  
Tetsuo Tsuchiya ◽  
Tomohiko Nakajima ◽  
Kentaro Shinoda
Keyword(s):  
Thin Film ◽  
Flexible Substrate ◽  
Solution Process ◽  
Substrate Material ◽  
Nano Particles ◽  
Temperature Growth ◽  
Excimer Lamp ◽  
Metal Organic ◽  
Pet Substrate ◽  
Organic Decomposition

ABSTRACTPreparation of the CaTiO3:Pr (CTO:Pr) phosphor thin film on PET substrate was investigated by using the excimer laser-assisted metal organic decomposition(ELAMOD) and photo reaction of nano-particles (PRNP) process. The effects of the substrate material, starting materials, and UV sources on photoluminescence (PL) were investigated. By using the BaTiO3(BTO) nano-particles buffer layer and the CTO: Pr nano-particles as a starting material, CTO: Pr thin film on the PET substrate was successfully obtained by using the KrF laser and excimer lamp irradiation at 25°C. It was found that excimer lamp irradiation is effective for improving the PL of the films.

scholarly journals High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Yingtao Xie ◽  
Dongping Wang ◽  
Hon Hang Fong
Keyword(s):  
High Performance ◽  
Annealing Temperature ◽  
Solution Process ◽  
Molar Ratio ◽  
Molar Ratios ◽  
Positive Voltage ◽  
Metal Organic ◽  
The Relationship ◽  
Organic Decomposition ◽  
Igzo Tft

A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD) method. The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O2)3], zinc acetylacetonate hydrate [Zn(C5H7O2)2·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O2)3] dissolved in tetrahydrofuran (THF). The deposited films by spin-coating were annealed at moderate process temperature (≤500°C). The relationship between device performance and postannealing temperature was studied. The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased. Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration. In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition. The result demonstrated that the saturated mobilities (μe) decreased and VTH shifted to positive voltage as the Ga molar ratio was increased. It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH. As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.

EPITAXIAL GROWTH OF SrTiO3 THIN FILMS BY SOL-GEL SYNTHESIS ON LaAlO3 AND Ni SUBSTRATES

2005 ◽  
Vol 19 (01n03) ◽  
pp. 379-381 ◽  
Author(s):  
S. CHEN ◽  
Z. HAN ◽  
Q. LIU ◽  
S. S. WANG ◽  
Z. Y. SUN ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Solution Process ◽  
Cube Texture ◽  
Buffer Layers ◽  
Uniform Microstructure ◽  
Metal Organic ◽  
Sol Gel Synthesis ◽  
Organic Decomposition

A solution process was used to grow SrTiO 3 ( STO ) buffer layers on LaAlO 3 ( LAO ) and biaxially textured Ni substrates by spin coating technique. The epitaxial STO film obtained has strong cube texture and uniform microstructure. A metal organic decomposition process using trifluoroacetate precursors was applied to deposit YBa 2 Cu 3 O 7-δ ( YBCO ) thin films on these buffer layers. The YBCO / STO / LAO was biaxially textured and the T Conset and Δ T C is 90.1K and 2.7K, respectively.

Substrate templated synthesis of single-phase and uniform Zr-porphyrin-based metal–organic frameworks

2020 ◽  
Vol 7 (1) ◽  
pp. 221-231
Author(s):  
Seong Won Hong ◽  
Ju Won Paik ◽  
Dongju Seo ◽  
Jae-Min Oh ◽  
Young Kyu Jeong ◽  
...  
Keyword(s):  
Chemical Bath Deposition ◽  
Single Phase ◽  
Metal Organic Frameworks ◽  
Templated Synthesis ◽  
Pore Structures ◽  
Phase Pure ◽  
Metal Organic ◽  
Cbd Method

We successfully demonstrate that the chemical bath deposition (CBD) method is a versatile method for synthesizing phase-pure and uniform MOFs by controlling their nucleation stages and pore structures.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

scholarly journals NaI Doping Effect on Photophysical Properties of Organic-Lead-Halide Perovskite Thin Films by Using Solution Process

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Chuangchuang Chang ◽  
Xiaoping Zou ◽  
Jin Cheng ◽  
Ying Yang ◽  
Yujun Yao ◽  
...  
Keyword(s):  
Photophysical Properties ◽  
Perovskite Solar Cells ◽  
Solution Process ◽  
Precursor Solution ◽  
Critical Issue ◽  
Peak Position ◽  
Semiconductor Film ◽  
Device Performance ◽  
Perovskite Layer ◽  
Organic Lead

Perovskite solar cells (PSCs) have been developed rapidly in recent years. How to modify the photophysical properties of perovskite films has become the critical issue, affecting device performance. In this paper, NaI doping into the perovskite layer is attempted to modulate the photophysical properties to improve the performance of PSCs. The perovskite layer was prepared by using the one-step solution spin coating method with doping different concentrations of NaI into the perovskite precursor solution and chlorobenzene employed as the antisolvent. Experimental results show that the absorption band edge and the peak position of the PL spectrum of the doped perovskite thin film were red shifted; thus, the band gap of the semiconductor film became narrow. Doping NaI into perovskite is an effective way, by which the photophysical properties of perovskite films are well modified, thus improving device performance.

scholarly journals On the Origin of the OER Activity of Ultrathin Manganese Oxide Films

2021 ◽  
Vol 13 (2) ◽  
pp. 2428-2436
Author(s):  
Paul Plate ◽  
Christian Höhn ◽  
Ulrike Bloeck ◽  
Peter Bogdanoff ◽  
Sebastian Fiechter ◽  
...  
Keyword(s):  
Manganese Oxide ◽  
Oxide Films
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