scholarly journals Chemical Vapor Deposited Mixed Metal Halide Perovskite Thin Films

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3526
Author(s):  
Siphesihle Siphamandla Magubane ◽  
Christopher Joseph Arendse ◽  
Siphelo Ngqoloda ◽  
Franscious Cummings ◽  
Christopher Mtshali ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Coverage ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cvd Method ◽  
Metal Halide Perovskite ◽  
Chemical Vapor Deposited ◽  
Xrd Patterns

In this article, we used a two-step chemical vapor deposition (CVD) method to synthesize methylammonium lead-tin triiodide perovskite films, MAPb1−xSnxI3, with x varying from 0 to 1. We successfully controlled the concentration of Sn in the perovskite films and used Rutherford backscattering spectroscopy (RBS) to quantify the composition of the precursor films for conversion into perovskite films. According to the RBS results, increasing the SnCl2 source amount in the reaction chamber translate into an increase in Sn concentration in the films. The crystal structure and the optical properties of perovskite films were examined by X-ray diffraction (XRD) and UV-Vis spectrometry. All the perovskite films depicted similar XRD patterns corresponding to a tetragonal structure with I4cm space group despite the precursor films having different crystal structures. The increasing concentration of Sn in the perovskite films linearly decreased the unit volume from about 988.4 Å3 for MAPbI3 to about 983.3 Å3 for MAPb0.39Sn0.61I3, which consequently influenced the optical properties of the films manifested by the decrease in energy bandgap (Eg) and an increase in the disorder in the band gap. The SEM micrographs depicted improvements in the grain size (0.3–1 µm) and surface coverage of the perovskite films compared with the precursor films.

Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Energy Dispersive ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Composition Distribution ◽  
X Ray ◽  
Cvd Method ◽  
Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

Compamson in the Growth and Properties of rf Sputtered μc-Si:H and Glow Discharge-Chemical Vapor Deposited μc-Si:H Films

1993 ◽  
Vol 321 ◽  
Author(s):  
J. Y. Lin ◽  
B. H. Tseng ◽  
K. C. Hsu ◽  
H. L. Hwang
Keyword(s):  
Glow Discharge ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Treatment Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Chemical Vapor Deposited ◽  
Ft Ir ◽  
Almost All

ABSTRACTProperties of μc-Si:H films grown by rf sputtering and by glow discharge-chemical vapor deposition (GD-CVD) using diluted-hydrogen and hydrogen-atom-treatment method were compared employing TEM, X-ray diffraction, Raman scattering and FT-IR. The films deposited by both methods all exhibited comparable grain sizes in the range of 10–18 nm. and showed the same tendency in almost all the Measurements.

Study of a chemical-vapor-deposited diamond thin film on a molybdenum substrate by glancing incidence X-ray diffraction

2007 ◽  
Vol 22 (4) ◽  
pp. 319-323 ◽  
Author(s):  
Jianfeng Fang ◽  
Jing Huo ◽  
Jinyuan Zhang ◽  
Yi Zheng
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Transition Layer ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Thin Film ◽  
Chemical Vapor Deposited

The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction intensities from the transition layer or its substrate and a function of grazing incidence angles. Results of glancing incidence X-ray diffraction analysis showed that thicknesses of the diamond thin film and the Mo2C transition layer were determined successfully with high precision.

Synthesis and Optical Properties of Eu3+ Doped NaYF4 and KYF4 Micro/Nanocrystals

2016 ◽  
Vol 16 (4) ◽  
pp. 3857-3860 ◽  
Author(s):  
Siling Guo ◽  
Chunyan Cao ◽  
Renping Cao
Keyword(s):  
Optical Properties ◽  
Emission Spectra ◽  
Local Environment ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Two Samples ◽  
Xrd Patterns ◽  
The Eu

Through a hydrothermal method, 1 mol% Eu3+ doped NaYF4 and KYF4 micro/nanocrystals have been synthesized. The materials were characterized by X-ray diffraction (XRD) patterns, field emission scanning electron microscopy (FE-SEM) images, room temperature photoluminescence (PL) excitation and emission spectra, and luminescent dynamic decay curves. The XRD analysis suggested the crystalline structures of the obtained samples. The FE-SEM images indicated the morphology and size of the obtained samples. The PL spectra illustrate the optical properties of Eu3+ in the two samples. Since it is sensitive to the local environment of the ion, the Eu3+ presents different optical properties in the NaYF4 and KYF4 materials.

scholarly journals Structural Disorder in Layered Hybrid Halide Perovskites: Types of Stacking Faults, Influence on Optical Properties and Their Suppression by Crystallization Engineering

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3333
Author(s):  
Andrei S. Tutantsev ◽  
Ekaterina I. Marchenko ◽  
Natalia N. Udalova ◽  
Sergey A. Fateev ◽  
Eugene A. Goodilin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Stacking Faults ◽  
Structural Disorder ◽  
Model System ◽  
Thickness Variation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Simple Addition ◽  
Halide Perovskites ◽  
Xrd Patterns

Layered hybrid halide perovskites (LHHPs) are an emerging type of semiconductor with a set of unique optoelectronic properties. However, the solution processing of high-quality LHHPs films with desired optical properties and phase composition is a challenging task, possibly due to the structural disorder in the LHHP phase. Nevertheless, there is still a lack of experimental evidence and understanding of the nature of the structural disorder in LHHPs and its influence on the optical properties of the material. In the current work, using 2D perovskites (C4H9NH3)2(CH3NH3)n−1PbnI3n+1 (further BA2MAn−1PbnI3n+1) with n = 1–4 as a model system, we demonstrate that deviations in LHHPs optical properties and X-ray diffraction occur due to the presence of continuous defects—Stacking Faults (SFs). Upon analyzing the experimental data and modeled XRD patterns of a possible set of stacking faults (SFs) in the BA2MAPb2I7 phase, we uncover the most plausible type of SFs, featured by the thickness variation within one perovskite slab. We also demonstrate the successful suppression of SFs formation by simple addition of BAI excess into BA2MAn−1PbnI3n+1 solutions.

Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

1996 ◽  
Vol 423 ◽  
Author(s):  
Hassan Golestanian ◽  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
T. Stacy ◽  
E. M. Charlson
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Volume Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Low Volume ◽  
Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

Modification of Stress in CVD Tungsten Silicide (Polycide) Film by SiO2 Capping

2001 ◽  
Vol 695 ◽  
Author(s):  
Joshua Pelleg ◽  
E. Elish
Keyword(s):  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Multilayered Film ◽  
Tungsten Silicide ◽  
X Ray ◽  
Lattice Parameter Variation ◽  
Thermal Oxide ◽  
Chemical Vapor Deposited ◽  
The Individual

ABSTRACTStresses in chemical vapor deposited polycide tungsten silicide (poly-Si/WSi2) wereevaluated at each stage of fabrication. The individual layers of the Si/SiO2/Poly-Si/WSi2/Poly-Si multilayer structure were deposited sequentially on separate wafers and subjected to x-ray diffraction analysis in the as deposited and annealed conditions to determine the changes in strain occurring in WSi2. Samples cut from wafers containing all the layers were capped with a 25nm thermal oxide and the strain in the WSi2 film was also analyzed by XRD. The change in strain of the WSi2 layer, following each step of the fabrication process, was evaluated by the lattice parameter variation of the c axis. The layers of the multilayered film affect the stress in the WSi2. A poly-Si layer on top of WSi2 reduces its stress, since it introduces a compressive component, which further decreases upon annealing. It also maintains a Si supply at the poly- Si/SiO2 interface, thus, eliminating Si outdiffusion during heat treatment in an oxygen containingambient. Capping the system by a thin oxide layer modifies the stress pattern of the WSi2, which becomes compressive.

Structural and Photocatalytic Properties of Fe-Dope TiO2 Nanostructure Using the Hydrothermal Treatment Method

2013 ◽  
Vol 634-638 ◽  
pp. 2261-2263
Author(s):  
Khun Ngern Supunnee ◽  
Vatcharinkorn Mekla ◽  
Eakkarach Raksasri
Keyword(s):  
Optical Properties ◽  
Hydrothermal Treatment ◽  
Treatment Method ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Cuo Nanostructure ◽  
Uv Visible ◽  
Xrd Patterns ◽  
Top View

In this work optical properties of CuO nanostructure were studied. CuO nanostructure were synthesized by the hydrothermal treatment method. The structural and chemical natures of the obtained materials were studied using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and study optical properties by UV-visible spectral. The XRD patterns of the CuO nanostructures indicated that CuO phases (JCPDS 05- 0661). The top-view SEM images, it can be seen clearly that high-density, horizontally scattered nanorod were grown on the product prepared at concentration of NaOH (aq) 7.5 M at 180 C for 12 h. The spectral of UV-vis data recorded showed the strong cut off at 341 nm.

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