scholarly journals Structural, Optical and Electrical Properties of Cu0.6CoxZn0.4−xFe2O4 (x = 0.0, 0.1, 0.2, 0.3, 0.4) Soft Ferrites

Molecules ◽  
2021 ◽  
Vol 26 (5) ◽  
pp. 1399
Author(s):  
W. Aslam Farooq ◽  
Muhammad Sajjad Ul Hasan ◽  
Muhammad Iftikhar Khan ◽  
Ahmad Raza Ashraf ◽  
Muhammad Abdul Qayyum ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Bandgap Energy ◽  
Optical And Electrical Properties ◽  
Ionic Radii ◽  
Dc Electrical Resistivity ◽  
Increasing Trend ◽  
Copper Zinc ◽  
Optical Bandgap Energy ◽  
Soft Ferrites

A series of cobalt-inserted copper zinc ferrites, Cu0.6CoxZn0.4−xFe2O4 (x = 0.0, 0.1, 0.2, 0.3, 0.4) having cubic spinel structure were prepared by the coprecipitation method. Various characterization techniques, including XRD, FTIR, UV-vis and I–V were used to investigate structural optical and electrical properties, respectively. The lattice constant was observed to be decreased as smaller ionic radii Co2+ (0.74 Å) replaced the higher ionic radii Zn2+ (0.82 Å). The presence of tetrahedral and octahedral bands was confirmed by FTIR spectra. Optical bandgap energy was determined in the range of 4.44–2.05 eV for x = 0.0 to 0.4 nanoferrites, respectively. DC electrical resistivity was measured and showed an increasing trend (5.42 × 108 to 6.48 × 108 Ω·cm) with the addition of cobalt contents as cobalt is more conductive than zinc. The range of DC electrical resistivity (108 ohm-cm) makes these nanomaterials potential candidates for telecommunication devices.

INSIGHT INTO STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF COBALT OXIDE Co3O4 THIN FILM

2019 ◽  
Vol 27 (04) ◽  
pp. 1950134
Author(s):  
K. M. E. BOUREGUIG ◽  
H. TABET-DERRAZ ◽  
T. SEDDIK
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Spherical Shape ◽  
Experimental Investigations ◽  
Spray Pyrolysis Method ◽  
Optical And Electrical Properties ◽  
Forbidden Transition ◽  
Scherrer Formula ◽  
Increasing Temperature

In the present paper, experimental investigations on structural, morphological, optical and electrical properties of Co3O4 thin film deposited by spray pyrolysis method are reported. Using the interplanar spacing of the XRD reflection and Scherrer formula, respectively, we observed that the obtained films identified crystallize in the cubic spinel structure with [Formula: see text] nm and [Formula: see text] nm. From the SEM picture, a dense grain in the morphology of Co3O4 is detected which has a uniform spherical shape. In addition, transmittance, absorbance, optical bandgap and extinction coefficient of the film versus incident photon energy were calculated. We found that Co3O4 film has a direct bandgap and direct forbidden transition varying from 1.69 eV to 2.85 eV and 1.62 eV to 1.88 eV, respectively. Further, the variation of (DC) electrical resistivity with temperature (from the room temperature of 27∘C to 350∘C) shows that the electrical resistivity was decreased with increasing temperature indicating a semiconducting transport behavior.

Effect of heat treatments on the electronic properties of indium sulfide films

2020 ◽  
Vol 89 (2) ◽  
pp. 20301 ◽  
Author(s):  
Tamihiro Gotoh
Keyword(s):  
Heat Treatment ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Heat Treatments ◽  
Indium Sulfide ◽  
Optical And Electrical Properties ◽  
Initial State ◽  
Sulfur Powder ◽  
Heat Treated ◽  
Ar Gas

The optical and electrical properties of indium sulfide films with different heat treatments are investigated. Indium sulfide films are heat treated in Ar gas in a temperature range of 100–400 °C. Some annealed samples are heat treated at 300 °C with sulfur powder. The indium sulfide films show a band gap of 1.9–2.3 eV, an electrical resistivity in the range of 5.5 × 100–6.0 × 103 Ωm, and n-type electrical conduction. The resistivity decreases by three orders of magnitude by heat treatment at 300 °C in Ar gas and recovers almost to the initial state by heat treatment at 300 °C with sulfur powder. The Seebeck coefficient and subgap absorption at 1 eV show similar changes and recovery. The experimental results reveal the possible control of the density of states and of the Fermi level position by heat treatment and, hence, the feasibility of carrier control.

Anisotropic electrical properties of sculptured thin films

2013 ◽  
Vol 91 (8) ◽  
pp. 658-661 ◽  
Author(s):  
C.B. Nelson ◽  
T.H. Gilani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Electrical Conduction ◽  
Glass Substrate ◽  
Dc Electrical Resistivity ◽  
Sculptured Thin Films ◽  
Dielectric Model ◽  
Good Agreement

The anisotropy in DC electrical resistivity of a chromium (Cr) sculptured thin film (STF) prepared on a glass substrate is measured and explained using a simple linear dielectric model for electrical conduction in metallic STFs. The experimental anisotropy as a function of growth angle of Cr columns on a glass substrate is in good agreement with the model.

Optical and electrical properties of solution processable TiOx thin films for solar cell and sensor applications

2011 ◽  
Vol 1352 ◽  
Author(s):  
Jiguang Li ◽  
Lin Pu ◽  
Mool C. Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Refractive Index ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Electrical Resistance ◽  
Optical And Electrical Properties

ABSTRACTRecently, few tens of nanometer thin films of TiOx have been intensively studied in applications for organic solar cells as optical spacers, environmental protection and hole blocking. In this paper we provide initial measurements of optical and electrical properties of TiOx thin films and it’s applications in solar cell and sensor devices. The TiOx material was made through hydrolysis of the precursor synthesized from titanium isopropoxide, 2-methoxyethanol, and ethanolamine. The TiOx thin films of thickness between 20 nm to 120 nm were obtained by spin coating process. The refractive index of TiOx thin films were measured using an ellipsometric technique and an optical reflection method. At room temperature, the refractive index of TiOx thin film was found to be 1.77 at a wavelength of 600 nm. The variation of refractive index under various thermal annealing conditions was also studied. The increase in refractive index with high temperature thermal annealing process was observed, allowing the opportunity to obtain refractive index values between 1.77 and 2.57 at a wavelength 600 nm. The refractive index variation is due to the TiOx phase and density changes under thermal annealing.The electrical resistance was measured by depositing a thin film of TiOx between ITO and Al electrode. The electrical resistivity of TiOx thin film was found to be 1.7×107 Ω.cm as measured by vertical transmission line method. We have also studied the variation of electrical resistivity with temperature. The temperature coefficient of electrical resistance for 60 nm TiOx thin film was demonstrated as - 6×10-3/°C. A linear temperature dependence of resistivity between the temperature values of 20 – 100 °C was observed.The TiOx thin films have been demonstrated as a low cost solution processable antireflection layer for Si solar cells. The results indicate that the TiOx layer can reduce the surface reflection of the silicon as low as commonly used vacuum deposited Si3N4 thin films.

Target to Substrate Distance Dependent Optical and Electrical Properties of Sputtered NiO Films

2012 ◽  
Vol 584 ◽  
pp. 33-36
Author(s):  
Avula Mallikarjuna Reddy ◽  
Akepati Sivasankar Reddy ◽  
Pamanji Sreedhara Reddy
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Substrate Distance ◽  
High Electrical Resistivity ◽  
Dc Reactive Magnetron Sputtering ◽  
Direct Band ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates at various target to substrate distances in the range of 60 to 80 mm by dc reactive magnetron sputtering technique. It was observed that target to substrate distance influenced the morphological, optical and electrical properties of the deposited films. The optical results revealed that the optical transmittance of the films increased with increasing the target to substrate distance upto 70 mm, thereafter it was decreased. The increase in transmittance of the films was due to an increase in size of the grains. The NiO films exhibited an optical transmittance of 60 % and direct band gap of 3.82 eV at target to substrate distance of 70 mm. The films showed high electrical resistivity of 37.3 Ωcm at target to substrate distance of 60 mm and low electrical resistivity of 5.1 Ωcm at target to substrate distance of 70 mm. At high target to substrate distance of 80 mm the electrical resistivity of the film was increased.

scholarly journals Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Chiuan Kuo ◽  
Chi-Chang Liu ◽  
Yaug-Fea Jeng ◽  
Chung-Chih Lin ◽  
Yeuh-Yeong Liou ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Film Thickness ◽  
Molybdenum Oxide ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Visible Transmittance ◽  
Deposited Film

Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness of 8.75 nm and an average visible transmittance of 78.7%.

Rapid Intense Pulse Light Sintering of Copper Sulphide Nanoparticle Films

2017 ◽  
Author(s):  
Shalu Bansal ◽  
Zhongwei Gao ◽  
Chih-hung Chang ◽  
Rajiv Malhotra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Intense Pulse Light ◽  
Optical And Electrical Properties ◽  
Copper Sulphide ◽  
Large Area ◽  
Nanoparticle Films ◽  
Pulse Light ◽  
Copper Zinc ◽  
Xenon Light

Copper sulphide (CuxS, x = 1 to 2) is a metal chalcogenide semiconductor that exhibits useful optical and electrical properties due to the presence of copper vacancies. This makes CuxS thin films useful for a number of applications including infrared absorbing coatings, solar cells, thin-film electronics, and as a precursor for CZTS (Copper Zinc Tin Sulphide) thin films. Post-deposition sintering of CuxS nanoparticle films is a key process that affects the film properties and hence determines its operational characteristics in the above applications. Intense pulse light (IPL) sintering uses visible broad-spectrum xenon light to rapidly sinter nanoparticle films over large-areas, and is compatible with methods such as roll-to-roll deposition for large-area deposition of colloidal nanoparticle films and patterns. This paper experimentally examines the effect of IPL parameters on sintering of CuxS thin films. As-deposited and sintered films are compared in terms of their crystal structure, as well as optical and electrical properties, as a function of the IPL parameters.

scholarly journals Effects of Drying Temperature and Molar Concentration on Structural, Optical, and Electrical Properties of β-Ga2O3 Thin Films Fabricated by Sol–Gel Method

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1391
Author(s):  
Taejun Park ◽  
Kyunghwan Kim ◽  
Jeongsoo Hong
Keyword(s):  
Electrical Properties ◽  
Quartz Substrate ◽  
Sol Gel ◽  
Molar Concentration ◽  
Bandgap Energy ◽  
Optical And Electrical Properties ◽  
Drying Temperature ◽  
Gel Method ◽  
Sol Gel Method ◽  
Temperature Scanning

In this study, β-Ga2O3 films were fabricated on a quartz substrate by the sol–gel method using different drying temperatures and solutions of different molar concentrations, and their structural, optical, and electrical properties were evaluated. The as-fabricated films exhibited a monoclinic β-Ga2O3 crystal structure, whose crystallinity and crystallite size increased with increasing molar concentration of the solutions used and increasing drying temperature. Scanning electron microscopy of the as-prepared samples revealed dense surface morphologies and that the thickness of the films also depended on the deposition conditions. The average transmittance of all the samples was above 8% in visible light, and the calculated optical bandgap energy was 4.9 eV. The resistivity measured using a 4-point probe system was 3.7 × 103 Ω cm.

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