Conical Nanotubes Synthesized by Atomic Layer Deposition of Al2O3, TiO2, and SiO2 in Etched Ion-Track Nanochannels

Etched ion-track polycarbonate membranes with conical nanochannels of aspect ratios of ~3000 are coated with Al2O3, TiO2, and SiO2 thin films of thicknesses between 10 and 20 nm by atomic layer deposition (ALD). By combining ion-track technology and ALD, the fabrication of two kinds of functional structures with customized surfaces is presented: (i) arrays of free-standing conical nanotubes with controlled geometry and wall thickness, interesting for, e.g., drug delivery and surface wettability regulation, and (ii) single nanochannel membranes with inorganic surfaces and adjustable isoelectric points for nanofluidic applications.

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Atomic Layer Deposition of Solid Lubricant Thin Films

World Tribology Congress III, Volume 2 ◽

10.1115/wtc2005-63566 ◽

2005 ◽

Cited By ~ 2

Author(s):

T. W. Scharf ◽

S. V. Prasad ◽

M. T. Dugger ◽

T. M. Mayer

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Transition Metal ◽

Atomic Layer Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Aspect Ratios ◽

Layer Deposition ◽

Vapor Deposition Technique

Tungsten disulphide (WS2) and molybdenum disulfide (MoS2), which belong to the family of transition metal dichalcogenides, are well known for their solid lubricating behavior. Thin films of MoS2 and WS2 exhibit extremely low coefficient of friction (COF ∼0.02 to 0.05) in dry environments, and are typically applied by sputter deposition, pulsed laser ablation, evaporation or chemical vapor deposition, which are essentially either line-of-sight or high temperature processes. With these techniques it is difficult to coat surfaces shadowed from the target, or uniformly coat sidewalls of three-dimensional or high aspect ratio structures. For applications such as micromechanical (MEMS) devices, where dimensions and separation tolerances are small, and aspect ratios are large, these traditional deposition techniques are inadequate. Atomic layer deposition (ALD) is a chemical vapor deposition technique that could overcome many of these problems by using sequential introduction of gaseous precursors and selective surface chemistry to achieve controlled growth at lower temperatures, but the chemistry needed to grow transition metal dichalcogenide films by ALD is not known.

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Atomic Layer Deposition of Inorganic Films for the Synthesis of Vertically Aligned Carbon Nanotube Arrays and Their Hybrids

Coatings ◽

10.3390/coatings9120806 ◽

2019 ◽

Vol 9 (12) ◽

pp. 806

Author(s):

Guang-Jie Yuan ◽

Jie-Fei Xie ◽

Hao-Hao Li ◽

Hong-Liang Lu ◽

Ying-Zhong Tian

Keyword(s):

Thin Films ◽

Carbon Nanotube ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Atomic Scale ◽

Nanotube Arrays ◽

Aspect Ratios ◽

Carbon Nanotube Arrays ◽

Layer Deposition ◽

Vertically Aligned

Vertically aligned carbon nanotube arrays (VACNTs) have many excellent properties and show great potential for various applications. Recently, there has been a desire to grow VACNTs on nonplanar surfaces and synthesize core-sheath-structured VACNT–inorganic hybrids. To achieve this aim, atomic layer deposition (ALD) has been extensively applied, especially due to its atomic-scale thickness controllability and excellent conformality of films on three-dimensional (3D) structures with high aspect ratios. In this paper, the ALD of catalyst thin films for the growth of VACNTs, such as Co3O4, Al2O3, and Fe2O3, was first mentioned. After that, the ALD of thin films for the synthesis of VACNT–inorganic hybrids was also discussed. To highlight the importance of these hybrids, their potential applications in supercapacitors, solar cells, fuel cells, and sensors have also been reviewed.

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽

10.1039/d0ce01252a ◽

2021 ◽

Author(s):

Pengmei Yu ◽

Sebastian M. J. Beer ◽

Anjana Devi ◽

Mariona Coll

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Complex Oxide ◽

Oxide Thin Films ◽

Layer Deposition ◽

Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

Advanced Functional Materials ◽

10.1002/adfm.202102556 ◽

2021 ◽

pp. 2102556

Author(s):

Jinseon Lee ◽

Jeong‐Min Lee ◽

Hongjun Oh ◽

Changhan Kim ◽

Jiseong Kim ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

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Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

Microscopy and Microanalysis ◽

10.1017/s1431927621009417 ◽

2021 ◽

Vol 27 (S1) ◽

pp. 2660-2662

Author(s):

David Elam ◽

Eduardo Ortega ◽

Andrey Chabanov ◽

Arturo Ponce

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Low Temperatures ◽

Atomic Layer ◽

Structural Defects ◽

Zno Thin Films ◽

Layer Deposition

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HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Dalton Transactions ◽

10.1039/d1dt01232k ◽

2021 ◽

Author(s):

Yuanyuan Cao ◽

Sha Zhu ◽

Julien Bachmann

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Two Dimensional ◽

Molecular Precursors ◽

Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

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Retention of Surface Structure Causes Lower Density in Atomic Layer Deposition of Amorphous Titanium Oxide Thin Films

Physical Chemistry Chemical Physics ◽

10.1039/d1cp00341k ◽

2021 ◽

Author(s):

Benjamin Rich ◽

Yael Etinger-Geller ◽

G. Ciatto ◽

A Katsman ◽

Boaz Pokroy

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Surface Structure ◽

Titanium Oxide ◽

Size Effects ◽

Atomic Layer ◽

Tio2 Films ◽

Structural Modifications ◽

Layer Deposition ◽

Amorphous Tio2

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

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