scholarly journals Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2552
Author(s):  
Xingwei Ding ◽  
Bing Yang ◽  
Haiyang Xu ◽  
Jie Qi ◽  
Xifeng Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Room Temperature ◽  
Network Formation ◽  
Semiconductor Films ◽  
Uv Treatment ◽  
Indium Zinc Oxide ◽  
Izo Thin Film

Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (Vth), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm2/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

scholarly journals A tunable volatile organic compound sensor by using PtOx/GQDs/TiO2 nanocomposite thin films at room temperature under visible-light activation

RSC Advances ◽  
2017 ◽  
Vol 7 (63) ◽  
pp. 39859-39868 ◽  
Author(s):  
Shaofeng Shao ◽  
Yunyun Chen ◽  
Shenbei Huang ◽  
Fan Jiang ◽  
Yunfei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Visible Light ◽  
Gas Sensors ◽  
Room Temperature ◽  
Light Activation ◽  
Nanocomposite Thin Film ◽  
Nanocomposite Thin Films ◽  
Volatile Organic ◽  
Visible Light Activation

Pt/GQDs/TiO2 nanocomposite thin film-based gas sensors show tunable VOC sensing behaviour at room temperature under visible-light activation.

Experimental Study of the High Cycle Fatigue of Thin Film Metal on Polyethylene Terephthalate for Flexible Electronics Applications

2009 ◽  
Author(s):  
Khalid Alzoubi ◽  
Susan Lu ◽  
Bahgat Sammakia ◽  
Mark Poliks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Flexible Electronics ◽  
Electrical Resistance ◽  
Thermal Stresses ◽  
Electronic Systems ◽  
Total Width ◽  
Flexible Substrates ◽  
Polyethylene Naphthalate

Flexible electronics represent an emerging area in the electronics packaging and systems integration industry with the potential for new product development and commercialization in the near future. Manufacturing electronics on flexible substrates will produce low cost devices that are rugged, light, and flexible. However, electronic systems are vulnerable to failures caused by mechanical and thermal stresses. For electronic systems on flexible substrates repeated stresses below the ultimate tensile strength or even below the yield strength will cause failures in the thin films. It is known that mechanical properties of thin films are different from those of bulk materials; so, it is difficult to extrapolate bulk material properties on thin film materials. The objective of this work is to study the behavior of thin-film metal coated flexible substrates under high cyclic bending fatigue loading. Polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are widely used substrates in the fabrication of microelectronic devices. Factors affecting the fatigue life of thin-film coated flexible substrates were studied, including thin film thickness, temperature, and humidity. A series of experiments for sputter-deposited copper on PET substrates were performed. Electrical resistance and crack growth rate were monitored during the experiments at specified time intervals. High magnification images were obtained to observe the crack initiation and propagation in the metal film. Statistical analysis based on design of experiments concepts was performed to identify the main factors and factor’s interaction that affect the life of a thin-film coated substrate. The results of the experiments showed that the crack starts in the middle of the sample and slowly grows toward the edges. Electrical resistance increases slightly during the test until the crack length covers about 90% of the total width of the sample where a dramatic increase in the resistance takes place.

scholarly journals Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

2010 ◽  
Vol 13 (9) ◽  
pp. H313 ◽  
Author(s):  
A. L. Salas-Villasenor ◽  
I. Mejia ◽  
J. Hovarth ◽  
H. N. Alshareef ◽  
D. K. Cha ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Chalcogenide Thin Film

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Abid ◽  
C. Terrier ◽  
J-P Ansermet ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behaviour ◽  
Spectroscopic Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped ◽  
Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

Research Progress in the Preparation of Flexible Substrate Barrier Films

2021 ◽  
Vol 1027 ◽  
pp. 91-98
Author(s):  
Li Xia Guan ◽  
Zhao Yi Zhou ◽  
Yi Jing Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Flexible Electronics ◽  
Flexible Substrate ◽  
Research Progress ◽  
Barrier Films ◽  
Main Challenge ◽  
Long Life

The development of flexible electronics towards for the direction of bend ability, lightweight, portability, long life against falling. The performance of the substrate in the flexible electronics plays a very important role in the development of electronics. In this article, three preparation technologies of thin films are introduced, including CVD, PVD and ALD. The paper also introduces the research progress on the preparation of substrate barrier films, and one main challenge that may face by the preparation of thin film materials. In order to satisfy the development of flexible electronics, improving the substrate’s performance constantly is needed. Finally, the development of preparing barrier films is prospected.

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

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