Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst

In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.

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Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Materials ◽

10.3390/ma13214956 ◽

2020 ◽

Vol 13 (21) ◽

pp. 4956

Author(s):

Yu-Li Hsieh ◽

Liann-Be Chang ◽

Ming-Jer Jeng ◽

Chung-Yi Li ◽

Chien-Fu Shih ◽

...

Keyword(s):

Thin Film ◽

Breakdown Voltage ◽

Gallium Oxide ◽

Schottky Contact ◽

Oxide Semiconductor ◽

Oxide Thin Film ◽

Metal Semiconductor Metal ◽

Ga2o3 Thin Film ◽

Capacitance Characteristics ◽

Contact Electrode

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

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Characterization of Crystalline Structure and Morphology of Ga2O3 Thin Film Grown by MOCVD Technique

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.721.253 ◽

2016 ◽

Vol 721 ◽

pp. 253-257

Author(s):

Alvars Kjapsna ◽

Lauris Dimitrocenko ◽

Ivars Tale ◽

Anatoly Trukhin ◽

Reinis Ignatans ◽

...

Keyword(s):

Thin Film ◽

Gallium Oxide ◽

Growth Process ◽

Oxygen Vacancies ◽

Oxide Thin Film ◽

Structure And Morphology ◽

Carrier Gases ◽

Compositional Properties ◽

Mocvd Technique

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.

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