scholarly journals Characterization of Crystalline Structure and Morphology of Ga2O3 Thin Film Grown by MOCVD Technique

2016 ◽  
Vol 721 ◽  
pp. 253-257
Author(s):  
Alvars Kjapsna ◽  
Lauris Dimitrocenko ◽  
Ivars Tale ◽  
Anatoly Trukhin ◽  
Reinis Ignatans ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Growth Process ◽  
Oxygen Vacancies ◽  
Oxide Thin Film ◽  
Structure And Morphology ◽  
Carrier Gases ◽  
Compositional Properties ◽  
Mocvd Technique

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.

scholarly journals Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1272 ◽  
Author(s):  
Alhalaili ◽  
Bunk ◽  
Vidu ◽  
Islam
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Growth Parameters ◽  
Oxide Thin Film ◽  
Scale Production ◽  
Nanocrystalline Thin Film ◽  
Ga2o3 Thin Film ◽  
Nano Sensors ◽  
Ag Catalyst

In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.

Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics

2001 ◽  
Vol 670 ◽  
Author(s):  
Ran Liu ◽  
Stefan Zollner ◽  
Peter Fejes ◽  
Rich Gregory ◽  
Shifeng Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal Oxides ◽  
Gate Dielectrics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Compositional Properties ◽  
Sharp Interfaces ◽  
Selection Of

ABSTRACTRapid shrinking in device dimensions calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability against reaction or diffusion to ensure sharp interfaces with both the substrate Si and the gate metal (or poly-Si). Extensive characterization of such materials in thin-film form is crucial not only for selection of the alternative gate dielectrics and processes, but also for development of appropriate metrology of the high-k films on Si. This paper will report recent results on structural and compositional properties of thin film SrTiO3 and transition metal oxides (ZrO2and HfO2).

Characterization of zinc oxide thin film for pH detector

2017 ◽  
Author(s):  
Uda Hashim ◽  
M. F. M. Fathil ◽  
M. K. Md Arshad ◽  
Subash C. B. Gopinath ◽  
M. N. A. Uda
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film

Manipulating the Structure and Morphology of Cobalt-Boron Nanoparticles through a Chemical Approach

2013 ◽  
Vol 829 ◽  
pp. 762-766 ◽  
Author(s):  
Hooman Sabarou ◽  
Abolghasem Ataie
Keyword(s):  
Growth Process ◽  
Ph Value ◽  
Amorphous Structure ◽  
Detailed Characterization ◽  
Synthesis Mechanism ◽  
Subsequent Formation ◽  
Structure And Morphology ◽  
Morphology And Structure ◽  
Structure Phase

Cobalt-boron nanoparticles have been synthesized by a chemical reaction between NaBH4 and CoCl2.6H2O through manipulating pH value of the reaction mixture. The morphology, structure, phase composition, and thermal behavior have been examined via FESEM, TEM, XRD, EDS, and DSC techniques, respectively. It is demonstrated that the morphology and structure of ultimate nanoparticles completely depends on the pH value of reaction mixture. While the neutral pH value favors the smallest nanoparticles with a mean particle size of 50 nm and complete amorphous structure, the acidic condition promotes the growth process and the crystal structure. Furthermore, these nanoparticles transform into cobalt nanocrystallites after heated at 600°C, and retained the discrepancies in the morphology and the structure of the parent cobalt-boron nanoparticles. A detailed characterization of the nanoparticulates, discussions on the synthesis mechanism, and subsequent formation transformation have been provided.

Development and characterization of confocal sputtered piezoelectric zinc oxide thin film

Vacuum ◽  
2021 ◽  
Vol 184 ◽  
pp. 109930
Author(s):  
Pallavi Sharma ◽  
Zeynel Guler ◽  
Nathan Jackson
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film
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