scholarly journals Machine Learning Assisted Inverse Design for Ultrafine, Dynamic and Arbitrary Gain Spectrum Shaping of Raman Amplification

Photonics ◽  
2021 ◽  
Vol 8 (7) ◽  
pp. 260
Author(s):  
Yuting Huang ◽  
Jiangbing Du ◽  
Yufeng Chen ◽  
Ke Xu ◽  
Zuyuan He

Distributed Raman amplifier (DRA) has been widely studied in recent decades because of its low noise figure and flexible gain. In this paper, we present a novel scheme of DRA with broadband amplified spontaneous emission(ASE) source as pump instead of discrete pump lasers. The broadband pump is optimized by machine learning based inverse design and shaped by programmable waveshaper, so as to realize the ultrafine, dynamic and arbitrary gain spectrum shaping of Raman amplification. For the target of flat gain spectrum, the maximum gain flatness of 0.1086 dB is realized based on the simulation results. For the target of arbitrary gain spectrum, we demonstrate four gain profiles with maximum root mean square error (RMSE) of 0.074 dB. To further measure the performance of arbitrary gain spectrum optimization, the probability density functions (PDF) of RMSE and Errormax are presented. Meanwhile, the numeral relationship between the bands of broadband pump and signal is also explored. Furthermore, this work has great application potential to compensate the gain distortion or dynamic change caused by other devices in communication systems.

2021 ◽  
Vol 20 ◽  
pp. 128-132
Author(s):  
Rashmi Hazarika ◽  
Manash Pratim Sharma

A low noise amplifier (LNA) plays a very significant role in communication systems. Despite having a good amplification of the signal it must offer other attributes like noise figure, linearity etc for making the communication system more robust. With the advent of 5G communication, the requirement of a high BW LNA is becoming important. This paper presents the design of a LNA which have a common gate input configuration, an active inductor in place of a passive inductor, common drain amplifier at the output stage and a linearity circuit. Common gate amplifier offers a good voltage amplification while the common drain stage enhances the stability. The active inductor facilitates reduction of the die area paving the way for a cost efficient structure. This proposed design achieves a gain of 15.17dB with substantial enhancement of linearity. A good noise figure of 7dB is obtained while using 11 transistors and eliminating the need of passive inductors. The peak gain is achieved at 3.5GHz


1999 ◽  
Vol 603 ◽  
Author(s):  
Guru Subramanyam ◽  
Felix A. Miranda ◽  
Robert R. Romanofsky ◽  
Fred Van Keuls ◽  
Chonglin Chen

AbstractIn this paper we discuss the performance of a proof-of-concept of a tunable band pass filter (BPF)/Low Noise Amplifier (LNA) hybrid circuit for a possible gain-compensated down-converter targeted for the next generation of K-band satellite communication systems. Electrical tunability of the filter is obtained through the nonlinear electric field dependence of the relative dielectric constant of a ferroelectric thin-film such as strontium titanate (SrTiO3) or barium strontium titanate (BaxSr1−xTiO3). Experimental results show that the BPFs are tunable by more than 5%, with a bipolar biasing scheme employed. The BPF/LNA tunable hybrid circuit was used to study the effect of tuning on the hybrid circuit's performance especially on the amplifier's noise-figure and the gain.


2021 ◽  
Author(s):  
Mohammad Rezvani

Recently, the growing advances in communication systems has led to urgent demand for low power, low cost, and highly integrated circuit topologies for transceiver designs, as key components of nearly every wireless application. Regarding to the usually weak input signal of such systems, the primary purpose of the wireless transceivers is consequently amplifying the signal without adding additional noise as much as possible. As a result, the performance of the low noise amplifier (LNA), measured in terms of features like gain, noise figure, dynamic range, return loss and stability, can highly determine the system’s achievement. Along with the evolution in wireless technologies, people get closer to the global seamless communication, which means people can unlimitedly communicates with each other under any circumstances. This achievement, as a result, paves the way for realizing wireless body area network (WBAN), the required applications for wireless sensor network, healthcare technology, and continuous health monitoring. This thesis suggests a number of LNA designs that can meet a wide range of requirements viz gain, noise figure, impedance matching, and power dissipation at 2.4Ghz frequency based on 0.13μm and 65nm CMOS technologies. This dissertation focused on the low power, high gain, CMOS reused current (CICR) LNA with noise optimization for on-body wireless body area networks (WBAN). A new design methodology is introduced for optimization of the LNA to attain gain and noise match concurrently. The designed LNA achieves a 28.5 dB gain, 2.4 dB noise figure, -18 dB impedance matching, while dissipating 1mW from a 1.2V power supply at 2.4 GHz frequency which is intended for WBAN applications. The tests and simulations of LNA are utilized in Cadence IC6.15 with IBM 130nm CMRF-8-SF library. The provided CICR LNA results inclusively prove the advantages of our design over other recorded structures. In the second step, a new linearization method is proposed based on Cascade LNA structure (CC-LNA). The proposed negative feedback intermodulation sink (NF-IMS) method benefits from the feedback to improve the linearity of CC-LNA. It proves that the additional negative feedback enhances the linearity of LNA despite the previous research. Furthermore, the heavily mathematical calculations of NF-IMS technique are carried on with the proposed modified Volterra series method. The NF-IMS method demonstrates more than 9.5dBm improvement in IIP3. Comparing to the previous techniques like: MDS and IMS, the improvement in the linearity aspect of the CC-LNA with is significant while it achieves a sufficient gain and noise performance of 16.7dB and 1.26db, respectively. Besides, the NF-IMS method presents a noise cancellation behavior as well. To increase the practical reliability of simulation, the real element model from TSMC 65nm CRN65GP library is applied. The CC-LNA that employed NF-IMS method is an excellent match with the market demands in WBAN’s gateway applications.


Author(s):  
Mohammed Lahsaini ◽  
Lahbib Zenkouar ◽  
Seddik Bri

The low noise amplifier is one of the basic functional blocks in communication systems. The main interest of the LNA at the input of the analog processing chain is to amplify the signal without adding significant noise. In this work, we have modeled a LNA for radar reception systems operating around 11 GHz, using the technique of impedance transformations with Smith chart utility. The type of transistor used is: the transistor HEMT AFP02N2-00 of Alpha Industries®. The results show that the modeled amplifier has a gain greater than 20 dB, a noise figure less than 2 dB, input and output reflection coefficients lower than -20 dB and unconditional stability.


2015 ◽  
Vol 14 (5) ◽  
pp. 5661-5686
Author(s):  
Essra E. Al-Bayati ◽  
R. S. Fyath

The design of distributed amplifiers (DAs) is one of the challenging aspects in emerging ultra high bit rate optical communication systems. This is especially important when implementation in submicron silicon complementary metal oxide semiconductor (CMOS) process is considered. This work presents a novel design scheme for DAs suitable for frontend amplification in 40 and 100 Gb/s optical receivers. The goal is to achieve high flat gain and low noise figure (NF) over the ultra wideband operating bandwidth (BW). The design scheme combines shifted second tire (SST) matrix configuration with cascode amplification cell configuration and uses m-derived technique. Performance investigation of the proposed DA architecture is carried out and the results are compared with that of other DA architectures reported in the literature. The investigation covers the gain and NF spectra when the DAs are implemented in 180, 130, 90, 65 and 45 CMOS standards.The simulation results reveal that the proposed DA architecture offers the highest gain with highest degree of flatness and low NF when compared with other DA configurations. Gain-BW products of 42772 and 21137 GHz are achieved when the amplifier is designed for 40 and 100 Gb/s operation, respectively, using 45 nm CMOS standard. Thesimulation is performed using AWR Microwave Office (version 10).


2020 ◽  
Vol 28 (8) ◽  
pp. 11911
Author(s):  
Yufeng Chen ◽  
Jiangbing Du ◽  
Yuting Huang ◽  
Ke Xu ◽  
Zuyuan He

2021 ◽  
Author(s):  
Mohammad Rezvani

Recently, the growing advances in communication systems has led to urgent demand for low power, low cost, and highly integrated circuit topologies for transceiver designs, as key components of nearly every wireless application. Regarding to the usually weak input signal of such systems, the primary purpose of the wireless transceivers is consequently amplifying the signal without adding additional noise as much as possible. As a result, the performance of the low noise amplifier (LNA), measured in terms of features like gain, noise figure, dynamic range, return loss and stability, can highly determine the system’s achievement. Along with the evolution in wireless technologies, people get closer to the global seamless communication, which means people can unlimitedly communicates with each other under any circumstances. This achievement, as a result, paves the way for realizing wireless body area network (WBAN), the required applications for wireless sensor network, healthcare technology, and continuous health monitoring. This thesis suggests a number of LNA designs that can meet a wide range of requirements viz gain, noise figure, impedance matching, and power dissipation at 2.4Ghz frequency based on 0.13μm and 65nm CMOS technologies. This dissertation focused on the low power, high gain, CMOS reused current (CICR) LNA with noise optimization for on-body wireless body area networks (WBAN). A new design methodology is introduced for optimization of the LNA to attain gain and noise match concurrently. The designed LNA achieves a 28.5 dB gain, 2.4 dB noise figure, -18 dB impedance matching, while dissipating 1mW from a 1.2V power supply at 2.4 GHz frequency which is intended for WBAN applications. The tests and simulations of LNA are utilized in Cadence IC6.15 with IBM 130nm CMRF-8-SF library. The provided CICR LNA results inclusively prove the advantages of our design over other recorded structures. In the second step, a new linearization method is proposed based on Cascade LNA structure (CC-LNA). The proposed negative feedback intermodulation sink (NF-IMS) method benefits from the feedback to improve the linearity of CC-LNA. It proves that the additional negative feedback enhances the linearity of LNA despite the previous research. Furthermore, the heavily mathematical calculations of NF-IMS technique are carried on with the proposed modified Volterra series method. The NF-IMS method demonstrates more than 9.5dBm improvement in IIP3. Comparing to the previous techniques like: MDS and IMS, the improvement in the linearity aspect of the CC-LNA with is significant while it achieves a sufficient gain and noise performance of 16.7dB and 1.26db, respectively. Besides, the NF-IMS method presents a noise cancellation behavior as well. To increase the practical reliability of simulation, the real element model from TSMC 65nm CRN65GP library is applied. The CC-LNA that employed NF-IMS method is an excellent match with the market demands in WBAN’s gateway applications.


Author(s):  
Cherechi Ndukwe ◽  
Oliver Ozioko ◽  
Okere A U

This paper presents the design, simulation and fabrication of a low noise amplifier with high gain of 1.5GHz. In communication systems, there is always difficulty in distinguishing the received signal from noise at very low signal powers. A low noise amplifier (LNA) is an effective and low-cost way of enhancing this signal quality through signal amplification at the receiver. In this work, LNA simulation and a novel design was carried out using the N76038A field effect transistor (FET). To ensure it is stable over a wide range of frequencies, the input and output stability of the transistor were plotted over its operating frequencies (0.1 GHz to 18 GHz). Constant gain and noise figure circles were plotted and the source impedance properly chosen. The input network was matched to the source impedance and conjugate matching used to match the output. The schematic was converted to microstrip and produced on a printed circuit board. Testing was carried out using the vector network analyser (VNA) and matching errors then corrected by calibration process. The fabricated LNA has a gain of 13.76dB and noise figure of 1.57dB which is in close agreement with a simulation result of 14.25dB and 1.56dB respectively.


2019 ◽  
Vol 9 (7) ◽  
pp. 1510
Author(s):  
Huy Hoang Nguyen ◽  
Duy Manh Luong ◽  
Gia Duong Bach

The power amplifier (PA) and low-noise amplifier (LNA) are the most critical components of transceiver systems including radar, mobile communications, satellite communications, etc. While the PA is the key component of the transmitter (TX), the LNA is the key component of the receiver (RX) of the transceiver system. It is pointed out that traditional design approaches for both the LNA and PA face challenging drawbacks. When designing an LNA, the power gain and noise figure of the LNA are difficult to improve simultaneously. For PA design, it indicates that efficiency and linearity of the PA are also hard to improve simultaneously. This study aims to surmount this by proposing a novel independently biased 3-stack GaN high-electron-mobility transistor (HEMT) configuration for efficient design of both PA and LNA for next generation wireless communication systems. By employing an independently biased technique, the proposed configuration can offer superior performance at both small-signal (SS) for LNA design and large-signal (LS) for PA design compared with other typical circuit configurations. Simulation results show that by utilizing an adaptive bias control of each transistor of the proposed configuration, both power gain and noise figure can be improved simultaneously for the LNA design. Moreover, efficiency and linearity can be also improved at the same time for the PA design. Compared results with other typical configurations including a single-stage, conventional cascode, independently biased cascode, and conventional 3-stack reveals that the proposed configuration exhibits superior advantages at both SS and LS operation.


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