scholarly journals High Accuracy Open-Type Current Sensor with a Differential Planar Hall Resistive Sensor

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2231 ◽  
Author(s):  
Sungho Lee ◽  
Sungmin Hong ◽  
Wonki Park ◽  
Wonhyo Kim ◽  
Jaehoon Lee ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Integrated Circuit ◽  
High Accuracy ◽  
Magnetic Sensors ◽  
Oxide Semiconductor ◽  
Current Sensor ◽  
Cmos Process ◽  
Open Type ◽  
Differential Structure ◽  
A Current

In this paper, we propose a high accuracy open-type current sensor with a differential Planar Hall Resistive (PHR) sensor. Conventional open-type current sensors with magnetic sensors are usually vulnerable to interference from an external magnetic field. To reduce the effect of an unintended magnetic field, the proposed design uses a differential structure with PHR. The differential structure provides robust performance to unwanted magnetic flux and increased magnetic sensitivity. In addition, instead of conventional Hall sensors with a magnetic concentrator, a newly developed PHR with high sensitivity is employed to sense horizontal magnetic fields. The PHR sensor and read-out integrated circuit (IC) are integrated through a post-Complementary metal-oxide-semiconductor (CMOS) process using multi-chip packaging. The current sensor is designed to measure a 1 A current level. The measured performance of the designed current sensor has a 16 kHz bandwidth and a current nonlinearity of under ±0.5%.

scholarly journals A Novel Ultrasonic TOF Ranging System Using AlN Based PMUTs

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 284
Author(s):  
Yihsiang Chiu ◽  
Chen Wang ◽  
Dan Gong ◽  
Nan Li ◽  
Shenglin Ma ◽  
...  
Keyword(s):  
Clock Cycle ◽  
High Accuracy ◽  
Ultrasonic Waves ◽  
Oxide Semiconductor ◽  
Average Error ◽  
Cmos Process ◽  
Clock Frequency ◽  
Time Frequency ◽  
Range Finding ◽  
Wide Range

This paper presents a high-accuracy complementary metal oxide semiconductor (CMOS) driven ultrasonic ranging system based on air coupled aluminum nitride (AlN) based piezoelectric micromachined ultrasonic transducers (PMUTs) using time of flight (TOF). The mode shape and the time-frequency characteristics of PMUTs are simulated and analyzed. Two pieces of PMUTs with a frequency of 97 kHz and 96 kHz are applied. One is used to transmit and the other is used to receive ultrasonic waves. The Time to Digital Converter circuit (TDC), correlating the clock frequency with sound velocity, is utilized for range finding via TOF calculated from the system clock cycle. An application specific integrated circuit (ASIC) chip is designed and fabricated on a 0.18 μm CMOS process to acquire data from the PMUT. Compared to state of the art, the developed ranging system features a wide range and high accuracy, which allows to measure the range of 50 cm with an average error of 0.63 mm. AlN based PMUT is a promising candidate for an integrated portable ranging system.

Sensor of Current or Magnetic Field Based on Magnetoresistance Effect in (La0.7Ca0.3)0.8Mn1.2O3 Manganite Film

2009 ◽  
Vol 154 ◽  
pp. 157-161 ◽  
Author(s):  
V.P. Dyakonov ◽  
S. Piechota ◽  
K. Piotrowski ◽  
A. Szewczyk ◽  
H. Szymczak ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Short Circuit ◽  
Operation Time ◽  
Electric Circuit ◽  
Current Sensor ◽  
Detectable Change ◽  
Magnetoresistance Effect ◽  
Manganite Film ◽  
Current Value ◽  
A Current

The main objective of the performed investigations was to enhance sensitivity of a current sensor to weak changes of magnetic field. New design of the sensor of current based on magnetoresistance effect – MRE (MRE = (RH - R0)/R0 , where RH is the resistance in magnetic field and R0 is the resistance without magnetic field) was developed. The sensor was produced in the form of an annular magnet with a gap, in which the (La0.7Sr0.3)0.8Мn1.2О3 manganite film possessing large negative MRE was inserted. Nominal current in a controllable electric circuit can change from a few tenths parts of ampere to a hundred of amperes. The limit detectable change of current value depends on the size of gap in the annular magnet. The operation time of sensor at current overload and short circuit is less than 0.3 sec. These magnetoresistors are thermally stable over the temperature range from (- 50 ° С) to (+ 50 ° С). Proposed sensors based on MRE can be applied in many electrical arrangements and devices.

Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

2016 ◽  
Vol 13 (4) ◽  
pp. 143-154 ◽  
Author(s):  
Jim Holmes ◽  
A. Matthew Francis ◽  
Ian Getreu ◽  
Matthew Barlow ◽  
Affan Abbasi ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Synthesis ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Timing Models ◽  
High Temperature Operation

In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circuits for extended periods (up to 100 h) are presented. These designs, created using the Raytheon UK's HiTSiC® CMOS process, present the densest, lowest-power integrated circuit technology capable of operating at extreme temperatures for any period. Based on these results, Venus nominal temperature (470°C) transistor models and gate-level timing models were created using parasitic extracted simulations. The complete CMOS digital gate library is suitable for logic synthesis and lays the foundation for complex integrated circuits, such as a microcontroller. A 16-bit microcontroller, based on the OpenMSP 16-bit core, is demonstrated through physical design and simulation in SiC-CMOS, with an eye for Venus as well as terrestrial applications.

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

scholarly journals Magnetoelectric Vortex Magnetic Field Sensors Based on the Metglas/PZT Laminates

Sensors ◽  
2020 ◽  
Vol 20 (10) ◽  
pp. 2810
Author(s):  
Do Thi Huong Giang ◽  
Ho Anh Tam ◽  
Vu Thi Ngoc Khanh ◽  
Nguyen Trong Vinh ◽  
Phung Anh Tuan ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Flux Distribution ◽  
Volume Fraction ◽  
Magnetic Sensors ◽  
Current Sensor ◽  
Vortex Center ◽  
Magnetic Field Sensors ◽  
Ring Shape ◽  
Voltage Signal ◽  
New Generation

This paper describes the route, from simulations toward experiments, for optimizing the magnetoelectric (ME) geometries for vortex magnetic field sensors. The research is performed on the base of the Metglas/Piezoelectric (PZT) laminates in both open and closed magnetic circuit (OMC and CMC) geometries with different widths (W), lengths (L), and diameters (D). Among these geometries, the CMC laminates demonstrate advantages not only in their magnetic flux distribution, but also in their sensitivity and in their independence of the position of the vortex center. In addition, the ME voltage signal is found to be enhanced by increasing the magnetostrictive volume fraction. Optimal issues are incorporated to realize a CMC-based ME double sandwich current sensor in the ring shape with D × W = 6 mm × 1.5 mm and four layers of Metglas. At the resonant frequency of 174.4 kHz, this sensor exhibits the record sensitivity of 5.426 V/A as compared to variety of devices such as the CMC ME sensor family, fluxgate, magnetoresistive, and Hall-effect-based devices. It opens a potential to commercialize a new generation of ME-based current and (or) vortex magnetic sensors.

scholarly journals Fully Differential Chopper-Stabilized Multipath Current-Feedback Instrumentation Amplifier with R-2R DAC Offset Adjustment for Resistive Bridge Sensors

2019 ◽  
Vol 10 (1) ◽  
pp. 63 ◽  
Author(s):  
Yongsu Kwon ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Kwonsang Han ◽  
Donggeun You ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Cmos Process ◽  
Current Feedback ◽  
Readout Integrated Circuit ◽  
Fully Differential ◽  
Chopper Stabilization ◽  
Rejection Ratio

A fully differential multipath current-feedback instrumentation amplifier (CFIA) for a resistive bridge sensor readout integrated circuit (IC) is proposed. To reduce the CFIA’s own offset and 1/f noise, a chopper stabilization technique is implemented. To attenuate the output ripple caused by chopper up-modulation, a ripple reduction loop (RRL) is employed. A multipath architecture is implemented to compensate for the notch in the chopping frequency band of the transfer function. To prevent performance degradation resulting from external offset, a 12-bit R-2R digital-to-analog converter (DAC) is employed. The proposed CFIA has an adjustable gain of 16–44 dB with 5-bit programmable resistors. The proposed resistive sensor readout IC is implemented in a 0.18 μm complementary metal-oxide-semiconductor (CMOS) process. The CFIA draws 169 μA currents from a 3.3 V supply. The simulated input-referred noise and noise efficiency factor (NEF) are 28.3 nV/√Hz and 14.2, respectively. The simulated common-mode rejection ratio (CMRR) is 162 dB, and the power supply rejection ratio (PSRR) is 112 dB.

Fabrication of microbridges in standard complementary metal oxide semiconductor technology

1989 ◽  
Vol 67 (4) ◽  
pp. 184-189 ◽  
Author(s):  
M. Parameswaran ◽  
Lj. Ristic ◽  
A. C. Dhaded ◽  
H. P. Baltes ◽  
W. Allegretto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Layout Design ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Digital Cmos ◽  
Sensor Applications

Complementary metal oxide semiconductor (CMOS) technology is one of the leading fabrication technologies of the semiconductor integrated-circuit industry. We have discovered features inherent in the standard CMOS fabrication process that lend themselves to the manufacturing of micromechanical structures for sensor applications. In this paper we present an unconventional layout design methodology that allows us to exploit the standard CMOS process for producing microbridges. Two types of microbridges, bare polysilicon microbridges and sandwiched oxide microbridges, have been manufactured by first implementing a special layout design in an industrial digital CMOS process, followed by a postprocessing etching step.

Multiferroic Memory: A Disruptive Technology or Future Technology?

2012 ◽  
Vol 189 ◽  
pp. 1-14 ◽  
Author(s):  
Ashok Kumar ◽  
Nora Ortega ◽  
Sandra Dussan ◽  
Shalini Kumari ◽  
Dilsom Sanchez ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Electric Fields ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Bismuth Ferrite ◽  
Random Access ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Disruptive Technology

The term "Multiferroic" is coined for a material possessing at least two ferroic orders in the same or composite phase (ferromagnetic, ferroelectric, ferroelastic); if the first two ferroic orders are linearly coupled together it is known as a magnetoelectric (ME) multiferroic. Two kinds of ME multiferroic memory devices are under extensive research based on the philosophy of "switching of polarization by magnetic fields and magnetization by electric fields." Successful switching of ferroic orders will provide an extra degree of freedom to create more logic states. The "switching of polarization by magnetic fields" is useful for magnetic field sensors and for memory elements if, for example, polarization switching is via a very small magnetic field from a coil underneath an integrated circuit. The electric control of magnetization is suitable for nondestructive low-power, high-density magnetically read and electrically written memory elements. If the system possesses additional features, such as propagating magnon (spin wave) excitations at room temperature, additional functional applications may be possible. Magnon-based logic (magnonic) systems have been initiated by various scientists, and prototype devices show potential for future complementary metal oxide semiconductor (CMOS) technology. Discovery of high polarization, magnetization, piezoelectric, spin waves (magnon), magneto-electric, photovoltaic, exchange bias coupling, etc. make bismuth ferrite, BiFeO3, one of the widely investigated materials in this decade. Basic multiferroic features of well known room temperature single phase BiFeO3in bulk and thin films have been discussed. Functional magnetoelectric (ME) properties of some lead-based solid solution perovskite multiferroics are presented and these systems also have a bright future. The prospects and the limitations of the ME-based random access memory (MERAM) are explained in the context of recent discoveries and state of the art research.

scholarly journals Miniaturized 0.13-μm CMOS Front-End Analog for AlN PMUT Arrays

Sensors ◽  
2020 ◽  
Vol 20 (4) ◽  
pp. 1205 ◽  
Author(s):  
Iván Zamora ◽  
Eyglis Ledesma ◽  
Arantxa Uranga ◽  
Núria Barniol
Keyword(s):  
Integrated Circuit ◽  
Imaging System ◽  
Ultrasonic Transducer ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Axial Distance ◽  
Cmos Integrated Circuit ◽  
Front End ◽  
Analog Front End

This paper presents an analog front-end transceiver for an ultrasound imaging system based on a high-voltage (HV) transmitter, a low-noise front-end amplifier (RX), and a complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric micromachined ultrasonic transducer (CMOS-AlN-PMUT). The system was designed using the 0.13-μm Silterra CMOS process and the MEMS-on-CMOS platform, which allowed for the implementation of an AlN PMUT on top of the CMOS-integrated circuit. The HV transmitter drives a column of six 80-μm-square PMUTs excited with 32 V in order to generate enough acoustic pressure at a 2.1-mm axial distance. On the reception side, another six 80-μm-square PMUT columns convert the received echo into an electric charge that is amplified by the receiver front-end amplifier. A comparative analysis between a voltage front-end amplifier (VA) based on capacitive integration and a charge-sensitive front-end amplifier (CSA) is presented. Electrical and acoustic experiments successfully demonstrated the functionality of the designed low-power analog front-end circuitry, which outperformed a state-of-the art front-end application-specific integrated circuit (ASIC) in terms of power consumption, noise performance, and area.

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