scholarly journals Silar Deposited Ternary Cucds2 Thin Film for Solar Cell Application

2019 ◽  
Vol 9 (1S3) ◽  
pp. 356-359
Keyword(s):  
Thin Film ◽  
Functional Group ◽  
Film Surface ◽  
Hexagonal Structure ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
Solar Cell Application ◽  
Layer Adsorption ◽  
Deposited Film

The CuCdS2 thin film have been deposited on over the glass substrate by successive ionic layer adsorption and reaction method. The film was characterized by Structural, Functional group, Morphology and Optical properties. The powder X-ray diffraction pattern result showed that the deposited film has confirmed CuCdS2 phase with hexagonal structure. Fourier-transform infrared spectroscopy confirmed the functional group metal vibration of deposited film. The deposited film surface morphology was analysis by scanning electron microscope and no visible cracks. The deposited film has a good absorbance in the visible range and calculated energy band gap is 1.77 eV. This film as a good applicant for economical thin film solar cells.

scholarly journals Nanocrystalline Cuco2se4 Thin Film Counter Electrode for Dye-Sensitized Solar Cells

2019 ◽  
Vol 9 (1S3) ◽  
pp. 370-373
Keyword(s):  
Thin Film ◽  
Dye Sensitized Solar Cells ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
Silar Method ◽  
Dye Sensitized ◽  
Optical Energy Band Gap ◽  
Layer Adsorption ◽  
Sensitized Solar Cells

Nanocrystalline CuCo2Se4 thin film have been deposited on over the micro slide by simplest route of successive ionic layer adsorption and reaction(SILAR) method. The CuCo2Se4 film was understand by Structural, morphological, and optical. The X-ray diffraction analyses confirm the formation of Cubic crystalline structure, than calculated grain size, dislocation density, and microstrain. The morphology of the film is homogeneous and agglomerated surface. The annealed CuCo2Se4 film are shows good optical absorption and the optical energy band gap energy is 1.90 eV, thus the suitable candidates for dye-Sensitized solar cell(DSSCs) application.

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

2013 ◽  
Vol 873 ◽  
pp. 426-430
Author(s):  
Xian Wu Xiu ◽  
Li Xu ◽  
Cheng Qiang Zhang
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Hexagonal Structure ◽  
Visible Range ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sputtering Power

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

scholarly journals Strain depth profiles in thin films extracted from in-plane X-ray diffraction

2021 ◽  
Vol 54 (1) ◽  
Author(s):  
Claudia Cancellieri ◽  
Daniel Ariosa ◽  
Aleksandr V. Druzhinin ◽  
Yeliz Unutulmazsoy ◽  
Antonia Neels ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Depth Profile ◽  
Film Surface ◽  
Inverse Laplace Transform ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Gradients ◽  
Dependent Strain

Thin films generally contain depth-dependent residual stress gradients, which influence their functional properties and stability in harsh environments. An understanding of these stress gradients and their influence is crucial for many applications. Standard methods for thin-film stress determination only provide average strain values, thus disregarding possible variation in strain/stress across the film thickness. This work introduces a new method to derive depth-dependent strain profiles in thin films with thicknesses in the submicrometre range by laboratory-based in-plane grazing X-ray diffraction, as applied to magnetron-sputtering-grown polycrystalline Cu thin films with different thicknesses. By performing in-plane grazing diffraction analysis at different incidence angles, the in-plane lattice constant depth profile of the thin film can be resolved through a dedicated robust data processing procedure. Owing to the underlying intrinsic difficulties related to the inverse Laplace transform of discrete experimental data sets, four complementary procedures are presented to reliably extract the strain depth profile of the films from the diffraction data. Surprisingly, the strain depth profile is not monotonic and possesses a complex shape: highly compressive close to the substrate interface, more tensile within the film and relaxed close to the film surface. The same strain profile is obtained by the four different data evaluation methods, confirming the validity of the derived depth-dependent strain profiles as a function of the film thickness. Comparison of the obtained results with the average in-plane stresses independently derived by the standard stress analysis method in the out-of-plane diffraction geometry validates the solidity of the proposed method.

ULTRASONIC SPRAY-ASSISTED CVD GROWTH OF HIGHLY TRANSPARENT AND CONDUCTIVE ALUMINUM-DOPED ZnO

2020 ◽  
Vol 27 (12) ◽  
pp. 2050024
Author(s):  
Y. KHAAISSA ◽  
K. FATHI ◽  
A. TALBI ◽  
K. NOUNEH ◽  
K. EL MABROUK ◽  
...  
Keyword(s):  
Hall Effect ◽  
Film Surface ◽  
Precursor Solution ◽  
Hall Effect Measurement ◽  
Optical Measurements ◽  
Effect Measurement ◽  
Visible Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Spray

Zinc oxide [Formula: see text], undoped and Al-doped thin films have been synthesized by the ultrasonic spray-assisted chemical vapor deposition (USCVD) system. The films were deposited on glass substrates. The precursor solution was prepared dissolving zinc chloride in distilled water. First, the precursor concentrations were investigated and optimized before studying [Formula: see text] doped, after we have studied the [Formula: see text]-doped influence on [Formula: see text] films especially optical and electrical properties for use as a transparent conductive oxide (TCO) in solar cell electrodes. The characterizations have been carried out using X-ray diffraction technique, UV-vis spectrophotometry, Hall Effect measurement (ECOPIA), atomic force microscopy (AFM, VEECO Dimension [Formula: see text] and scanning electron microscopy (SEM). X-ray diffraction (XRD) results showed that [Formula: see text] and [Formula: see text]-doped [Formula: see text] films were crystallized in the hexagonal wurtzite structure with [Formula: see text] orientation. Optical measurements have shown that all films exhibit, along the visible range, high transmittance and that optical band gap depends strongly to [Formula: see text]-doped concentration. Hall-effect measurement indicates that the highest carrier concentration [Formula: see text] and the lowest resistivity [Formula: see text] are obtained for the [Formula: see text] AZO sample. The SEM shows that the microstructures of [Formula: see text] and [Formula: see text] are homogeneous and the AFM images prove their microcrystallinity with grains orthogonal to the film surface.

Optical Properties of Nano-CuInSi Thin Films Prepared by Multilayer Synthesized Method

2011 ◽  
Vol 403-408 ◽  
pp. 1094-1098
Author(s):  
Jian Sheng Xie ◽  
Ping Luan ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
N2 Atmosphere ◽  
Double Beam ◽  
Absorption Studies ◽  
Different Temperatures

Thin Nano-CuInSi films have been prepared by multilayer synthesized method using magnetron sputtering technology, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at 2θ=42.450°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The calculated absorption coefficient is larger than 105 cm−1 when the wavelength is shorter than 750 nm. The band gap has been estimated from the optical absorption studies and found to be about 1.47 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Single- and Multi-target Pulsed Laser Deposition of Thin BSTO films: Preparation, Microstructure and Electrical Properties

2003 ◽  
Vol 784 ◽  
Author(s):  
Kumaravinothan Sarma ◽  
Peter Kr. Petrov ◽  
Neil McN. Alford
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Capacitor Structure

ABSTRACTA comparative study of microstructure and electrical properties of BaxSr1-xTiO3 films made by single- and multi-target pulsed laser deposition was carried out. The films were epitaxially grown on both LaAlO3 and MgO substrates. The structural properties of all samples were investigated using X-ray diffraction and Raman spectroscopy. The elemental composition of the samples was investigated using energy dispersive X-ray analysis. For electrical properties examination, a simple capacitor structure was patterned on the film surface. Thin films made using both methods exhibit similar structural and electrical properties; however the samples made by a multi-target method underwent phase transition in a broader temperature region. The results prove the possibility of using the multi-target pulse laser deposition as a more flexible method for engineering thin film stoichometry.

scholarly journals The Role of Substrate on Thermal Evolution of Ag/TiO2 Nanogranular Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2253
Author(s):  
Vincenzo Balzano ◽  
Emanuele Cavaliere ◽  
Mattia Fanetti ◽  
Sandra Gardonio ◽  
Luca Gavioli
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Thermal Evolution ◽  
Film Surface ◽  
Visible Range ◽  
Broad Absorption Band ◽  
Zener Pinning ◽  
Cluster Beam Deposition ◽  
Deposited Film

In multicomponent thin films, properties and functionalities related to post-deposition annealing treatments, such as thermal stability, optical absorption and surface morphology are typically rationalized, neglecting the role of the substrate. Here, we show the role of the substrate in determining the temperature dependent behaviour of a paradigmatic two-component nanogranular thin film (Ag/TiO2) deposited by gas phase supersonic cluster beam deposition (SCBD) on silica and sapphire. Up to 600 °C, no TiO2 grain growth nor crystallization is observed, likely inhibited by the Zener pinning pressure exerted by the Ag nanoparticles on the TiO2 grain boundaries. Above 600 °C, grain coalescence, formation of However, the two substrates steer the evolution of the film morphology and optical properties in two different directions. anatase and rutile phases and drastic modification of the optical absorption are observed. On silica, Ag is still present as NPs distributed into the TiO2 matrix, while on sapphire, hundreds of nm wide Ag aggregates appear on the film surface. Moreover, the silica-deposited film shows a broad absorption band in the visible range while the sapphire-deposited film becomes almost transparent for wavelengths above 380 nm. We discuss this result in terms of substrate differences in thermal conductivity, thermal expansion coefficient and Ag diffusivity. The study of the substrate role during annealing is possible since SCBD allows the synthesis of the same film independently of the substrate, and suggests new perspectives on the thermodynamics and physical exchanges between thin films and their substrates during heat treatments.

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