Ground-Adjustable Inductor for Wide-Tuning VCO Design

2012 ◽  
Vol 256-259 ◽  
pp. 2373-2378
Author(s):  
Wu Shiung Feng ◽  
Chin I Yeh ◽  
Ho Hsin Li ◽  
Cheng Ming Tsao
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Supply Voltage ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Wide Tuning Range ◽  
Chip Area ◽  
Ground Plate

A wide-tuning range voltage-controlled oscillator (VCO) with adjustable ground-plate inductor for ultra-wide band (UWB) application is presented in this paper. The VCO was implemented by standard 90nm CMOS process at 1.2V supply voltage and power consumption of 6mW. The tuning range from 13.3 GHz to 15.6 GHz with phase noise between -99.98 and -115dBc/Hz@1MHz is obtained. The output power is around -8.7 to -9.6dBm and chip area of 0.77x0.62mm2.

scholarly journals Ultra-Wide Band LNA Design using Active Inductor with Modified Noise Cancellation Technique

2019 ◽  
Vol 8 (2) ◽  
pp. 2406-2410
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Wide Band ◽  
Low Noise ◽  
Ultra Wide Band ◽  
Active Inductor ◽  
Cmos Process ◽  
Chip Area ◽  
Chip Size ◽  
Lna Design

An Ultra-Wide Band (UWB) Low Noise Amplifier (LNA) is affective in deciding the chip size and in the implementation cost at Radio Frequency applications. The proposed LNA design with an active inductor is a different solution to trounce the habit of passive inductors to cut the chip area. Designed in 90-nm CMOS process, a voltage gain of 9dB to 15.5dB for a supply voltage of 0.9v to 1.8V with a smallest Noise Figure (NF) of 5.7dB is achieved by the LNA, with low power utilization and at 2.40 GHz, with 345um2 of chip area.

scholarly journals An Ultra-Low-Power K-Band 22.2 GHz-to-26.9 GHz Current-Reuse VCO Using Dynamic Back-Gate-Biasing Technique

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Ultra Low Power ◽  
Current Reuse ◽  
K Band

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.

A Very Low Power Quadrature VCO with Modified Current-Reuse and Back-Gate Coupling Topology

2017 ◽  
Vol 26 (11) ◽  
pp. 1750184 ◽  
Author(s):  
Qiuzhen Wan ◽  
Jun Dong ◽  
Hui Zhou ◽  
Fei Yu
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Noise ◽  
Tuning Range ◽  
Supply Voltage ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Current Reuse ◽  
Quadrature Vco ◽  
In Series

In this paper, a very low power modified current-reused quadrature voltage-controlled oscillator (QVCO) is proposed with the back-gate coupling technique for the quadrature signal generation. By stacking switching transistors in series like a cascode, the modified current-reused QVCO can be constructed in a totem-pole manner to reuse the dc biasing current and lower the power consumption. By utilizing the back-gates of switching transistors as coupling terminals to achieve the quadrature outputs, the back-gate coupled QVCO improves the phase noise and reduces the power consumption compared to the conventional coupling transistor based topology. Together with the modified current-reuse and back-gate coupling techniques, the proposed QVCO can operate at reduced supply voltage and power consumption while maintaining remarkable circuit performance in terms of low phase noise and wide tuning range. With a dc power of 1.6[Formula: see text]mW under a 0.8[Formula: see text]V supply voltage, the simulation results show the tuning range of the QVCO is from 2.36 to 3.04[Formula: see text]GHz as the tuning voltage is varied from 0.8 to 0.0[Formula: see text]V. The phase noise is [Formula: see text]118.3[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset frequency from the carrier frequency of 2.36[Formula: see text]GHz and the corresponding figure-of-merit of the QVCO is [Formula: see text]183.7[Formula: see text]dBc/Hz.

scholarly journals A LOW PHASE NOISE, POWER EFFICIENT VOLTAGE CONTROLLED OSCILLATOR USING 0.18-μM CMOS TECHNOLOGY

2014 ◽  
pp. 256-259
Author(s):  
AJIT SAMASGIKAR
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Tuning Range ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Noise Power ◽  
Voltage Controlled Oscillator ◽  
Power Efficient ◽  
Sustained Oscillations ◽  
Low Phase Noise

A low phase noise, power efficient VCO using UMC 0.18μm CMOS technology has been proposed in this paper. The proposed VCO has a tuning range of 9.71GHz to 9.9GHz, with a phase noise of -79.88 dBc/Hz @ 600kHz offset. The Vtune ranging between 1V - 1.5V generates sustained oscillations. The maximum power consumption of the VCO is 11.9mW using a supply voltage of 1.8V with ±10% variation.

Wide Tuning Range Varactorless Tunable Active Inductor-Based Voltage Controlled Oscillator for Wireless Applications

2019 ◽  
Vol 28 (14) ◽  
pp. 1950242
Author(s):  
Omar Faruqe ◽  
Md Tawfiq Amin
Keyword(s):  
Tuning Range ◽  
Active Inductor ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Performance Parameters ◽  
Wide Tuning Range ◽  
Silicon Area ◽  
Wireless Applications ◽  
Dc Power ◽  
Tuning Frequency

This paper presents a varactorless tunable active inductor-based voltage controlled oscillator (VCO) in 90[Formula: see text]nm CMOS process. The proposed VCO yields a wide tuning range of 116% with an output frequency of 1.19–4.46[Formula: see text]GHz for the tuning voltage of 0.3–1.5[Formula: see text]V. It consumes a low dc power ranging from 2.44[Formula: see text]mW to 4.79[Formula: see text]mW for the specified tuning range. The variation of phase noise ranges from [Formula: see text][Formula: see text]dBc/Hz to [Formula: see text][Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset with the change of tuning voltage as well as tuning frequency. The proposed varactorless VCO has a maximum Figure of Merit (FOM) of [Formula: see text][Formula: see text]dBc/Hz with a differential output power of 1.8[Formula: see text]dBm at tuning voltage of 0.7[Formula: see text]V. The elimination of varactor which abates the silicon area consumption and the minimization of the variation of performance parameters are the special outcomes of the proposed active inductor-based VCO. Comparing the performance parameters such as power consumption, FOM and tuning range, the proposed design outperforms most of the cited designs.

Low Phase Noise and Low Power Voltage-Controlled-Oscillator Using Current-Reuse Techniques for Wireless Communication Circuits

2013 ◽  
Vol 479-480 ◽  
pp. 1010-1013
Author(s):  
Tsung Han Han ◽  
Meng Ting Hsu ◽  
Cheng Chuan Chung
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Chip Area ◽  
Voltage Controlled Oscillators ◽  
Communication Circuits ◽  
5 Ghz ◽  
Low Phase Noise

In this paper, we present low phase noise and low power of the voltage-controlled oscillators (VCOs) for 5 GHz applications. This chip is implemented by Taiwan Semiconductor Manufacturing Company (TSMC) standard 0.18 μm CMOS process. The designed circuit topology is included a current-reused configuration. It is adopted memory-reduced tail transistor technique. At the supply voltage 1.5 v, the measured output phase noise is-116.071 dBc/Hz at 1MHz offset frequency from the carrier frequency 5.2 GHz. The core power consumption is 3.7 mW, and tuning range of frequency is about 1.3 GHz from 4.8 to 6.1 GHz. The chip area is 826.19 × 647.83 um2.

scholarly journals A Tunable Wideband Frequency Synthesizer Using LC-VCO and Mixer for Reconfigurable Radio Transceivers

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Yusaku Ito ◽  
Kenichi Okada ◽  
Kazuya Masu
Keyword(s):  
Tuning Range ◽  
Frequency Synthesizer ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Chip Area ◽  
Variable Gain ◽  
Continuous Frequency ◽  
Reconfigurable Radio ◽  
Lc Vco

This paper proposes a novel wideband LC-based voltage-controlled oscillator (VCO) for multistandard transceivers. The proposed VCO has a core LC-VCO and a tuning-range extension circuit, which consists of switches, a mixer, dividers, and variable gain combiners with a spurious rejection technique. The experimental results exhibit 0.98 to 6.6 GHz continuous frequency tuning with −206 dBc/Hz of FoMT, which is fabricated by using a 0.18 μm CMOS process. The frequency tuning range (FTR) is 149%, and the chip area is 800 μm × 540 μm.

scholarly journals Dual Band Switchable Voltage Controlled Oscillator in 65-nm CMOS Technology

2020 ◽  
pp. 31-34
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Cmos Technology ◽  
Dual Band ◽  
Total Power ◽  
Voltage Controlled Oscillator ◽  
Dual Frequency ◽  
Chip Area ◽  
Total Power Consumption ◽  
Oscillation Frequencies

A switchable differential voltage-controlled oscillator (VCO) has been fabricated in 65nm CMOS. It is a dual frequency VCO whose oscillation frequencies can be changed from 40GHz (VCO1) to 80GHz (VCO2). The tuning range for VCO1 is 1GHz and for VCO2 is 4GHz. The inductor switching is attained with the help of transistor as a switch and inductors are fabricated in a stacked manner for saving die area. The output power of VCO1 is 1 dBm and for VCO2 is 0dBm with a total power consumption of 42mW. The phase noises were -94.62 dBc/Hz and -81.43 dBc/Hz at 1MHz offset for VCO1 and VCO2 respectively. The chip area is 500 x 560 um2 including probing pads.

Resistorless Frequency Locked On-Chip Oscillator with Proportional-to-Absolute Temperature References

2019 ◽  
Vol 28 (10) ◽  
pp. 1950162 ◽  
Author(s):  
Peiqing Han ◽  
Niansong Mei ◽  
Zhaofeng Zhang
Keyword(s):  
Power Consumption ◽  
Temperature Coefficient ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
Cmos Process ◽  
Voltage Sensitivity ◽  
Chip Area ◽  
Frequency Spread ◽  
Temperature Coefficient Of Frequency ◽  
On Chip

A 36-kHz frequency locked on-chip oscillator is proposed, the proportional-to-absolute temperature (PTAT) current and voltage generator is presented to eliminate conventional temperature-compensated resistors. The resistorless approach reduces the process variation of frequency and the chip area. The oscillator is fabricated in 0.18-[Formula: see text]m standard CMOS process with an active area of 0.072[Formula: see text]mm2. The temperature coefficient of frequency is 48[Formula: see text]ppm/∘C at best and 82.5[Formula: see text]ppm/∘C on average over [Formula: see text]–70∘C and the frequency spread is 1.43% ([Formula: see text]/[Formula: see text] without calibration. The supply voltage sensitivity is 1.8%/V in the range from 0.65[Formula: see text]V to 1[Formula: see text]V and the power consumption is 95[Formula: see text]nW under the supply voltage of 0.65[Formula: see text]V.

A NOVEL WIDEBAND CMOS VCO USING SWITCH CAPACITORS ARRAY FOR RF APPLICATIONS

2012 ◽  
Vol 21 (05) ◽  
pp. 1250046
Author(s):  
MOHAMMAD NIABOLI-GUILANI ◽  
MAHROKH MAGHSOODI ◽  
ALIREZA SABERKARI ◽  
REZA MESHKIN
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Tuning Range ◽  
High Efficiency ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Voltage Variation ◽  
Low Power Dissipation ◽  
Tuning Frequency

This paper presents a novel low power consumption, low phase noise, and high tuning range CMOS cross-coupled voltage-controlled oscillator (VCO). Using common mode double-pseudo-resistance technique in the proposed circuit leads to low power dissipation without degrading the phase noise. Additionally, band-switching capacitor array is employed in order to increase the tuning range. The schematic circuit of the proposed VCO is simulated in 0.18 μm 1P6M CMOS process and simulation results show high efficiency of the proposed circuit. The overall tuning frequency range is from 1.7 GHz to 3.18 GHz (59%) with tuning voltage variation range from 0 V to 1.5 V. The proposed VCO circuit has phase noise of -102.6 and -124.3 dBc/Hz at 100 KHz and 1 MHz offset frequency from the carrier, respectively, while consumes 1.98 mW power at 1.5 V supply voltage.

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