Study on Transient Thermal Resistance of Microwave Pulse Power Device

2013 ◽  
Vol 347-350 ◽  
pp. 1630-1634
Author(s):  
Xiao Ming Ding ◽  
Gang Chen ◽  
Dian Li Wang
Keyword(s):  
Thermal Resistance ◽  
Microwave Pulse ◽  
Process Condition ◽  
Modern Technology ◽  
Thermal Image ◽  
Test Results ◽  
Power Devices ◽  
Image Test ◽  
Transient Thermal ◽  
Sintered Temperature

Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390 °C. Using micro-infrared thermal image instrument, compares the microwave transient infrared thermal image test results of sample devices which chips welded process under two different process condition. Measured results show that the thermal resistance after chip welded process optimized is twenty percent smaller than before. It describes the importance of controlling the chip welded process parameters during assembly.

Investigation Regarding Thermal Resistance of Surface Mount Type Discrete Power Semiconductor Package

2020 ◽  
Author(s):  
Koji Nishi
Keyword(s):  
Thermal Resistance ◽  
Three Dimensional ◽  
Thermal Impedance ◽  
Power Devices ◽  
Power Semiconductor ◽  
Resistance Variation ◽  
Motor Design ◽  
Impedance Curve ◽  
The Difference ◽  
Transient Thermal

Abstract Power electronics is becoming more important than before with motor application expansion. For size reduction of inverter integrated motor design, accurate temperature prediction of power devices is becoming critical. For up to several hundred-watt motor system, inverter is designed with discrete power devices with standard package. This paper investigates package thermal resistance of a DPAK package as an example. Firstly, three-dimensional heat conduction simulation only with DPAK package model is conducted. It is found that its package thermal resistance changes by ∼6.2°C/W due to boundary condition variation. After that, simulation not only with DPAK package but also with PCB is conducted to understand package thermal resistance of a real system implementation case. It is found that package thermal resistance varies drastically by copper trace size. “Smallest” case with minimum copper traces shows ∼0.9 °C/W higher value than larger copper trace case and shows ∼1.5 °C/W higher value than the case that copper trace fully covers PCB top surface, in the case that horizontal PCB size is 50 × 50 mm. After that, two types of test boards with different trace size for of n-channel MOSFET with DPAK package are prepared. Measurements are conducted to know package thermal resistance variation by copper trace size. Transient thermal impedance curve is obtained from measurement result and is converted to a cumulative Rth-Cth curve to know and discuss the difference by copper trace size of these two test boards. The difference is also discussed with and compared to that of simulation results.

Measurement and Analysis on Transient Thermal Characteristics of High Speed Motorized Spindle

2011 ◽  
Vol 52-54 ◽  
pp. 2021-2026
Author(s):  
Gui Ling Deng ◽  
Can Zhou
Keyword(s):  
High Speed ◽  
Thermal Deformation ◽  
Thermal Characteristics ◽  
Measuring System ◽  
Test Results ◽  
Motorized Spindle ◽  
Measurement And Analysis ◽  
Turning Center ◽  
Transient Thermal ◽  
Deformation Compensation

Thermal deformation is an important factor to affect the accuracy of the motorized spindle, the core component of high-speed machine tool. To understand the spindle system transient thermal characteristics of the high-speed turning center CH7516GS, some high-precision sensors and high-frequency data acquisition system is used to establish the temperature and displacement measuring system. The thermal deformation compensation model is established on the basis of the experimental test results.

scholarly journals Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations

2017 ◽  
Vol 897 ◽  
pp. 595-598
Author(s):  
Diane Perle Sadik ◽  
Jang Kwon Lim ◽  
Juan Colmenares ◽  
Mietek Bakowski ◽  
Hans Peter Nee
Keyword(s):  
Thermal Stress ◽  
Short Circuit ◽  
Thermal Simulation ◽  
Temperature Evolution ◽  
Power Devices ◽  
Different Types ◽  
Transient Thermal

The temperature evolution during a short-circuit in the die of three different Silicon Carbide1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructedstructure of commercially available devices. The location of the hottest point in the device iscompared. Finally, the analysis supports the necessity to turn off short-circuit events rapidly in orderto protect the device after a fault.

Identification of thermo-mechanical fatigue fracture location by transient thermal analysis for high-temperature operating SiC power module assembled with ZnAl eutectic solder

2018 ◽  
Vol 2018 (HiTEC) ◽  
pp. 000028-000031 ◽  
Author(s):  
Fumiki Kato ◽  
Hiroki Takahashi ◽  
Hidekazu Tanisawa ◽  
Kenichi Koui ◽  
Shinji Sato ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Thermal Resistance ◽  
Thermal Cycle ◽  
Base Plate ◽  
Test Machine ◽  
Power Module ◽  
Eutectic Solder ◽  
Transient Thermal Analysis ◽  
The Individual ◽  
Transient Thermal

Abstract In this paper, we demonstrate that the structural degradation of a silicon carbide (SiC) power module corresponding to thermal cycles can be detected and tracked non-destructively by transient thermal analysis method. The purpose of this evaluation is to analyze the distribution of the thermal resistance in the power module and to identify the structure deterioration part. The power module with SiC-MOSFET were assembled using ZnAl eutectic solder as device under test. The individual thermal resistance of each part such as the SiC-die, the die-attachment, the AMCs, and the baseplate was successfully evaluated by analyzing the structure function graph. A series of thermal cycle test between −40 and 250°C was conducted, and the power modules were evaluated their thermal resistance taken out from thermal cycle test machine at 100, 200, 500 and 1000 cycles. We confirmed the increase in thermal resistance between AMCs and base plate in each thermal cycle. The portion where the thermal resistance increased is in good agreement with the location of the structural defect observed by scanning acoustic tomography (SAT) observation.

High Melting Temperature Lead Free Solder for Die Attach Application

2011 ◽  
Vol 2011 (1) ◽  
pp. 000322-000326
Author(s):  
Jianxing Li ◽  
Daniel Lau ◽  
Pingliang Tu ◽  
Andrew Delano ◽  
Brian Knight
Keyword(s):  
Thermal Conductivity ◽  
Copper Substrate ◽  
Process Condition ◽  
Lead Free ◽  
Test Results ◽  
Melt Temperature ◽  
Die Attach ◽  
Free Solder ◽  
Lead Free Solders ◽  
Board Level

Two lead free solders were developed for die attach application. The bismuth based solder has a melt temperature of 271C and thermal conductivity of 18W/mK. The zinc based solder has a melt temperature of 337C and thermal conductivity of 85W/mK. Both solders have acceptable wetting on bare copper and nickel plated copper substrate, could be processed using modified high lead solder process condition and survived 260C board level reflow simulation. This paper discusses the solder material properties, and presents the die attach process and reliability test results in a manufacturing environment.

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