Laser Recrystallization of InP Films on Oxidized Si Substrate

1985 ◽  
Vol 53 ◽  
Author(s):  
Li Xiqiang ◽  
Zhu Weiwen ◽  
Lin Chenglu ◽  
Wang Weiyuan ◽  
Tsou Shihchang
Keyword(s):  
Grain Size ◽  
Laser Power ◽  
Beam Diameter ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Laser Recrystallization ◽  
Before And After

ABSTRACTThe InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

SI Contacts Formed from Spun-on Metallo-Organic Solutions

1983 ◽  
Vol 25 ◽  
Author(s):  
C. S. Pai ◽  
B. Zhang ◽  
D. M. Scott ◽  
S. S. Lau ◽  
M. Bartur ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Linear Region ◽  
X Ray ◽  
Si Substrates ◽  
Organic Solutions ◽  
Pt Films

ABSTRACTThe use of spun-on liquids to form ohmic and Schottky barrier contacts on Si has been investigated. Two commercially available metallo-organic solutions containing Au or Pt were applied to Si substrates by spinning techniques. The Au or Pt contacts were then formed by annealing at 250°C or 450°C respectively. The metallurgical interactions between the spun-on Au or Pt layers and the Si substrate were investigated by MeV backscattering spectrometry and X-ray diffraction as a function of the annealing temperature. The resulting electrical characteristics were investigated with four point probe, I-V and C-V techniques. It was found that the spun-on Au or Pt films react with Si substrates at much higher temperatures than those deposited by vacuum evaporation. The diode characteristics of the spun-on Au films are comparable to those of evaporated Au films ( φB ∼0.85V, n ∼1.08), whereas diode characteristics of spunon Pt films show no linear region on the ln I-V curve. The application of spun-on Au also improves the bondability of Si chips on Mo headers.

The Influences of Addition of MgCO3 on the Properties of the Magnesia Prepared Using Magnesite

2018 ◽  
Vol 281 ◽  
pp. 230-235
Author(s):  
Wang Nian Zhang ◽  
Li Wang ◽  
Ni Deng
Keyword(s):  
Grain Size ◽  
Bulk Density ◽  
Raw Materials ◽  
Apparent Porosity ◽  
X Ray Diffraction ◽  
Linear Change ◽  
Change Rate ◽  
X Ray ◽  
Before And After ◽  
Calcination Method

Micropowder MgCO3 was added into magnesite as raw materials to prepare magnesia using a two-step calcination method. The sample magnesite was characterized use X-ray diffraction (XRD) and scanning electron microscopy (SEM). Experimental results showed that the sample insulated at 1600° C for 3 hours before and after sintering presented a linear change rate of 15.6 % in the case of without adding micropowder MgCO3, the prepared magnesia had a bulk density of 2.31 g/cm3 and apparent porosity of 32.8 %, while MgO grain size was 3.11 μm. In the case of adding 8 % micropowder MgCO3, the sample magnesite before and after sintering showed a linear change rate of 17.9 %. The bulk density, apparent porosity of prepared magnesia were 2.46 g/cm3 and 28.1 % respectively, while the grain size of MgO was 5.15 mm.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

Laser Recrystallization of Mocvd Poly-Gaas on Insulating Substrates

1985 ◽  
Vol 53 ◽  
Author(s):  
X.M. Bao ◽  
X.F. Huang ◽  
P. Han ◽  
J.M. Yin
Keyword(s):  
Grain Size ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
X Ray Diffraction ◽  
Trace Impurities ◽  
X Ray ◽  
Laser Recrystallization ◽  
Gaas Films ◽  
Mocvd Technique ◽  
Insulating Substrates

ABSTRACTPoly-GaAs films have been grown on amorphous insulating substrates by MOCVD technique. The films were analyzed using TEM, X-ray diffraction, AES and ESCA measurements. The results show that poly-GaAs films are flat, bright and close in texture and stoichiometric. The grain size is about 200Å. The film contains trace impurities such as Si,O and C. They are evenly distributed in the film. The poly-GaAs films were crystallized by CW Ar+ laser with a increase of grain size from 200Å to 40 µm. Schottky barrier diodes of good I-V characteristics were made on the laser recrystallized GaAs films.

LASER-INDUCED SELECTIVE CRYSTALLIZATION OF A-SiGe FILM

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4203-4206 ◽  
Author(s):  
XIYING MA ◽  
XUEKANG CHEN ◽  
GAN WU ◽  
JIANPING YANG ◽  
ZHANGXU LEI
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Nanometer Materials ◽  
Selective Crystallization ◽  
Treated Sample ◽  
Before And After ◽  
Two Peaks

Laser induced pattern crystallization technique with pulsed KrF excimer (248 nm) laser was used to irradiation amorphous SiGe films prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si substrates. The surface of laser treated sample was investigated by scanning electron microscopy (SEM), it was found that the film irradiated by KrF excimer composed by well-shaped square periodicity embedded in the a-SiGe matrix, and in each square there are laser induced SiGe nanocrystals. The size of SiGe crystals was estimated to be about 10 nm. The samples were analyzed by X-ray diffraction, Raman spectroscopy and photoluminescence analysis before and after crystallization. The Raman spectrum shows strong Ge-Ge, Si-Ge, and Si-Si vibrations that agree with those of crystalline Si 1-x Ge x alloy. Strong PL with two peaks at 720 nm and 750 nm was observed at room temperature in the crystallized film, whereas the uncrystallized sample emits no peaks. These results indicate that nanometer SiGe alloy were formed and laser-induced technology is an efficient technique to produce nanometer materials.

Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

1991 ◽  
Vol 220 ◽  
Author(s):  
Yasuaki Hirano ◽  
Taroh Inada
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystallization Process ◽  
Thermal Reaction ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Film Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sic Films

Single crystal β-SiC films have been fabricated on (100)Si substrates through a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The substrate temperature during the deposition ranged from 600 to 1100°C. The film properties were analyzed by RHEED and x-ray diffraction measurements. RBS measurements and TEM observations have also been made to investigate the film properties. The single crystal β-SiC films grow at and above 1000°C on (100) substrates. The activation energy is found to be around 1.1 eV for the crystallization process.

scholarly journals Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

1994 ◽  
Vol 358 ◽  
Author(s):  
A. R. Heyd ◽  
S. A. Alterovitz ◽  
E. T. Croke
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Alloy Composition ◽  
Compressive Strain ◽  
Energy Shift ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Graded Layers

ABSTRACTSixGe1–x heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on SixGe1–x heterostructures on Ge substrates has not received much attention. A SixGe1–x: layer on a Si substrate is under compressive strain while SixGe1–x on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content SixGe1–x layers the energy shift algorithm, which is used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize SixGe1–x/Ge superlattices grown on Ge substrates. The results are found to agree closely with high resolution x-ray diffraction measurements made on the same samples.The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded SixGe1–x layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 µm SixGe1–x layer linearly graded in the range 0.5 ≤ x ≤ 1.0.

Study of Sitox Process and its Application to Advanced MOS Devices

1992 ◽  
Vol 260 ◽  
Author(s):  
J. Lin ◽  
W. Chen ◽  
S. Banerjee ◽  
J. Lee ◽  
C. Teng ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Si Substrate ◽  
Polycrystalline Structure ◽  
Leakage Currents ◽  
X Ray ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Mos Devices ◽  
High Annealing ◽  
Average Grain Size

ABSTRACTIn this study, the application of Sllicidation Through OXide (SITOX) process to TiSi2 formation is extensively investigated. The data show that the decomposition of an interfacial SiO2 layer between Ti and the Si substrate depends not only on its thickness but also on the silicidation temperature and the type of dopants in the Si substrate. In general, high annealing temperatures and B-doped p+ Si substrates enhance the decomposition of interfacial SiO2. After the silicidation process, the O concentration at the TiSi2/Si interface is approximately two orders of magnitude higher with SITOX than with the conventional silicidation process. This high interfacial O concentration has no significant effect on the electrical properties of SITOX TiSi2 films and junction diodes. The X-ray Diffraction analysis shows that SITOX TiSi2 films have a polycrystalline structure as do conventional TiSi2 films. The average grain size in a 100 nm SITOX TiSi2 film is estimated to be about 10 μm wide, while that in a 120 nm conventional TiSi2 film is about 3 μm. Histograms of leakage current for junction diodes confirm that the SITOX process can improve the uniformity of leakage currents.

Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
T. Eshita ◽  
T. Suzuki ◽  
T. Hara ◽  
F. Mieno ◽  
Y. Furumura ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
Growth Technique ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Structure ◽  
Sic Films

AbstractWe developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

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