Transient Response Enhancement with Fast Transient Controller for Capacitor-Less LDO Regulator

2014 ◽  
Vol 543-547 ◽  
pp. 800-805 ◽  
Author(s):  
Shang Sheng Chi ◽  
Wei Hu ◽  
Ming Hui Fan ◽  
Yu Sen Xu ◽  
Guo Lin Chen

This paper presents a capacitor-less CMOS low dropout regulator (LDO) with a push-pull class AB amplifier, and a fast transient controller to achieve a better transient response. The undershoot/overshoot voltage and the settling time are effectively reduced. Through the theoretical analysis of the circuit, cadence simulation with SMIC 0.18μm process and under the condition of the input voltage range 1.4~4 V shows the output voltage is 1.2 V, with the fast controller the total quiescent current is 8.2 μA, the undershoot /overshoot voltage is 97 mV/47 mV and the settling time is 0.3 μs as load current suddenly changes from 1 to 100 mA, or vice versa. Compared with this paper without fast transient controller, the undershoot voltage, the overshoot voltage and the settling time are enhanced by 30%, 64% and 80%, respectively.

2021 ◽  
Author(s):  
Darshil Patel

Low noise, high PSRR and fast transient low-dropout (LDO) regulators are critical for analog blocks such as ADCs, PLLs and RF SOC, etc. This paper presents design of low power, fast transient, high PSRR and high load-regulation low-dropout (LDO) regulator. The proposed LDO regulator is designed in 180nm. CMOS process and simulated in LTSpice and Cadence platform. The LDO proposed can support input voltage range up to 5V for loading currents up to 230mA. Measurements showed transient time or set-up time of less than 22µs, PSRR of ~66dB at 100kHz and >40dB at 1MHz and 0.8535mV of output voltage variation for a 0-230mA of load variation.


2021 ◽  
Author(s):  
Darshil Patel

Low noise, high PSRR and fast transient low-dropout (LDO) regulators are critical for analog blocks such as ADCs, PLLs and RF SOC, etc. This paper presents design of low power, fast transient, high PSRR and high load-regulation low-dropout (LDO) regulator. The proposed LDO regulator is designed in 180nm. CMOS process and simulated in LTSpice and Cadence platform. The LDO proposed can support input voltage range up to 5V for loading currents up to 230mA. Measurements showed transient time or set-up time of less than 22µs, PSRR of ~66dB at 100kHz and >40dB at 1MHz and 0.8535mV of output voltage variation for a 0-230mA of load variation.


2021 ◽  
Author(s):  
Darshil Patel

Low noise, high PSRR and fast transient low-dropout (LDO) regulators are critical for analog blocks such as ADCs, PLLs and RF SOC, etc. This paper presents design of low power, fast transient, high PSRR and high load-regulation low-dropout (LDO) regulator. The proposed LDO regulator is designed in 180nm. CMOS process and simulated in LTSpice and Cadence platform. The LDO proposed can support input voltage range up to 5V for loading currents up to 230mA. Measurements showed transient time or set-up time of less than 22µs, PSRR of ~66dB at 100kHz and >40dB at 1MHz and 0.8535mV of output voltage variation for a 0-230mA of load variation.


2017 ◽  
Vol 26 (12) ◽  
pp. 1750197 ◽  
Author(s):  
Fatemeh Abdi ◽  
Mahnaz Janipoor Deylamani ◽  
Parviz Amiri

In this paper, we use bias current boosting and slew rate enhancement in multiple-output Low-dropout structure to achieve a faster transient response. This method reduces ripples of output voltage during sudden changes in load current and input voltage. The proposed MOLDO circuit was simulated with a 0.18[Formula: see text][Formula: see text]m CMOS process in buck mode with four-output legs. Integrating of proposed circuit is easier because there is the symmetry in the circuit designing. The results of our work show that when input voltage changes between 2.5–3.3[Formula: see text]V, the output voltage after 25[Formula: see text][Formula: see text]s with load current of 100[Formula: see text]mA, is determined with ripple less than 1.8[Formula: see text]mV. In sudden changes, the load current at the range 0–100[Formula: see text]mA, and output voltages after a maximum 15.5[Formula: see text][Formula: see text]s with an input voltage of 3.3[Formula: see text]V have the highest ripple in output voltage of 4[Formula: see text]mV.


2013 ◽  
Vol 284-287 ◽  
pp. 2526-2530
Author(s):  
Wei Ben Yang ◽  
Chi Hsiung Wang ◽  
Hsiang Hsiung Chang ◽  
Ming Hao Hong ◽  
Jsung Mo Shen

This paper presents a low-power fast-settling low-dropout regulator (LDO) using a digitally assisted voltage accelerator. Using the selectable-voltage control technique and digitally assisted voltage accelerator significantly improves the transition response time within output voltage switched. The proposed LDO regulator uses the selectable-voltage control technique to provide two selectable-voltage outputs of 2.5 V and 1.8 V. Using the digitally assisted voltage accelerator when the output voltage is switched reduces the settling time. The simulation results show that the settling time of the proposed LDO regulator is significantly reduced from 4.2 ms to 15.5 μs. Moreover, the selectable-voltage control unit and the digitally assisted voltage accelerator of the proposed LDO regulator consume only 0.54 mW under a load current of 100 mA. Therefore, the proposed LDO regulator is suitable for low-power dynamic voltage and frequency-scaling applications.


2019 ◽  
Vol 28 (03) ◽  
pp. 1950043 ◽  
Author(s):  
M. Jahangiri ◽  
A. Farrokhi

A fast transient capacitor-less low-dropout regulator is presented in this study. The proposed LDO structure is based on Output Voltage Spike Reduction (OVSR) circuits and capacitance compensation circuits to enable a fast-transient response with ultra-low power dissipation and to make the LDO stable for a wide range of output load currents (0–50[Formula: see text]mA). The slew rate is improved with more slew current from the OVSR circuit and unity gain bandwidth is improved by a capacitor multiplayer circuit. The proposed LDO has been simulated with a standard 0.18[Formula: see text][Formula: see text]m CMOS process. The output voltage of the LDO was set to 1.2[Formula: see text]V for an input voltage of 1.4–2[Formula: see text]V. The Simulation results verify that the transient times are less than 2.8[Formula: see text][Formula: see text]s and the maximum undershoot and overshoot are 20[Formula: see text]mV while consuming only 26[Formula: see text][Formula: see text]A quiescent current. The proposed LDO is stable with an on-chip capacitor at the output node within the wide range of 1100[Formula: see text]PF.


Author(s):  
Neeru Agarwal ◽  
Neeraj Agarwal ◽  
Chih-Wen Lu

This work proposes a new OLED driver architecture with 10-bit segmented DAC and switched capacitor multiply-by-two circuit application. A 30-channel 10-bit switched capacitor driver chip prototype is implemented in 0.18-[Formula: see text]m CMOS technology. In this architecture, the achieved output range is 1.5–4.8[Formula: see text]V for an input range of 1.5–3.15[Formula: see text]V, which is suitable for OLED driver with different colors. This architecture is not only converting the digital input signal to analog output for the display panel but also giving amplified high output voltage range. In the segmented DAC, 6-bit coarse DAC and 4-bit fine DAC are used for the input voltage range 1.5–3.15[Formula: see text]V. In a conventional RDAC for the output voltage of 4.8[Formula: see text]V, it requires 2[Formula: see text] switches i.e., 14-bit RDAC for the same resolution. Hence, conventional RDAC driver is four times larger than the proposed innovative very compact and high speed 10-bit segmented DAC switched capacitor OLED driver. The new architecture drastically reduces the number of switches and complex metal routing which results in reduced power consumption and good settling time. In the proposed OLED driver, no extra buffer is required as switched capacitor op-amp is applied for the same purpose with a gain of more than one. This high-resolution design with small die area also improves the linearity and uniformity with low-power consumption. The post-simulated results show that the OLED driver exhibits the maximum DNL and INL of 0.03 LSB and [Formula: see text]0.06 LSB, respectively, with an LSB voltage of 3[Formula: see text]mV. The one-channel area is 0.586[Formula: see text]mm [Formula: see text] 0.017[Formula: see text]mm and the settling time is 4.25[Formula: see text][Formula: see text]s for 30[Formula: see text]k[Formula: see text] and 30[Formula: see text]pF driving load.


2021 ◽  
Vol 16 ◽  
pp. 262-274
Author(s):  
Said El Mouzouade ◽  
Karim El Khadiri ◽  
Zakia Lakhliai ◽  
Driss Chenouni ◽  
Ahmed Tahiri

A hybrid-mode low-drop out (LDO) voltage regulator with fast transient response performance for IoT applications is proposed in this paper. The proposed LDO regulator consist of two sections. First section is an analog regulator which includes a folded cascode operational amplifier to achieve good PSRR. Second section is current DAC and detectors whitch includes a cource current DAC, sink current DAC, undershoot detectors, and overshoot detectors. The current DAC and detectors are designed to obtain a low drop out and fast transient response. The proposed hybrid-mode LDO voltage regulator has been designed, simulated and layouted in Cadence using TSMC 90 nm CMOS technology. The input range of the LDO regulator is 1.2–2.0 V, and it can produces an output voltage of 1.2V. The LDO regulator achieves 58uA quiescent current, -69 PSRR @ 1 KHz noise frequency and an output voltage drop of around 60mV for a load current step of 100 mA. The final design occupies approximately 0.09 mm2.


Author(s):  
Lanya Yu ◽  
Qisheng Zhang ◽  
Xiao Zhao ◽  
Boran Wen ◽  
Liyuan Dong ◽  
...  

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