Utilization of XPS Analysis for the Characterization of Mechanochemical Activation in Polymer-Cement Composite Materials

2014 ◽  
Vol 1000 ◽  
pp. 231-234 ◽  
Author(s):  
Lukáš Kalina ◽  
David Matoušek ◽  
František Šoukal

This paper introduces the X-ray photoelectron spectroscopy (XPS) technique, well applicable for the analysis of the interfacial layer between polyvinyl alcohol and monocalcium aluminate in macro defect-free (MDF) cement. The experimental results explain the chemical reaction mechanism during the mechanochemical process, which is crucial for the formation of those non-traditional polymercement composite materials.

2011 ◽  
Vol 295-297 ◽  
pp. 912-916 ◽  
Author(s):  
Yong Ning Zhou ◽  
Zheng Wen Fu

Metal oxynitride (VxON, CrxON) thin film has been fabricated by reactive dc sputtering method and annealing process. Its electrochemical properties are investigated in a MxON/Li cell. The reversible specific capacities are around 830 mAh g-1 for VxON and 730 mAh g-1 for CrxON. By using selected-area electron diffraction and X-ray photoelectron spectroscopy measurements, New electrochemical reaction mechanism is uncovered, which should be responsible for its good electrochemical performance.


2011 ◽  
Vol 284-286 ◽  
pp. 597-600
Author(s):  
Dai Mei Chen ◽  
Hai Peng Ji ◽  
Jian Xin Wang ◽  
Jian Chen ◽  
Xin Long Luan ◽  
...  

Nitrogen doped TiO2/sepiolite composite materials (N-TiO2/sep) with different nitrogen contents were prepared by a sol-gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), respectively. XRD and SEM results showed that anatase-TiO2nanoparticles were distributed homogenously on the surface of sepiolite. XPS revealed that N atoms could incorporate into the lattice of anatase TiO2substituting the oxygen atoms sites of oxygen atoms.


1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.


1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.


2011 ◽  
Vol 415-417 ◽  
pp. 642-647
Author(s):  
En Zhong Li ◽  
Da Xiang Yang ◽  
Wei Ling Guo ◽  
Hai Dou Wang ◽  
Bin Shi Xu

Ultrafine fibers were electrospun from polyacrylonitrile (PAN)/N,N-dimethyl formamide (DMF) solution as a precursor of carbon nanofibers. The effects of solution concentration, applied voltage and flow rate on preparation and morphologies of electrospun PAN fibers were investigated. Morphologies of the green fibers, stabilized fibers and carbonized fibers were compared by scanning electron microscope (SEM). The diameter of PAN nanofibers is about 450nm and the distribution of diameter is well-proportioned. Characterization of the elements changes of fibers were performed by X-ray photoelectron spectroscopy (XPS).


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