Effect of Annealing Atmosphere on the Mg2Si Film Growth Deposited by Magnetron Sputtering

2010 ◽  
Vol 129-131 ◽  
pp. 290-294 ◽  
Author(s):  
Qing Quan Xiao ◽  
Quan Xie ◽  
Ke Jie Zhao ◽  
Zhi Qiang Yu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Vacuum Annealing ◽  
Morphological Properties ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
Gas Atmosphere ◽  
Diffraction Peaks ◽  
Ar Gas

Semiconducting Mg2Si films were fabricated on Si (111) substrates by magnetron sputtering and subsequent annealing, and the effects of annealing atmosphere on the Mg2Si film growth were studied. The structural and morphological properties of Mg2Si films were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that annealing atmosphere was an important factor that affected the growth of Mg2Si thin films, and vacuum annealing was not suitable for preparing Mg2Si thin films. Only Si (111) substrate diffraction peaks were observed, and no Mg2Si diffraction peak was observed when the first six Mg/Si samples were annealed under vacuum annealing condition. However, many Mg2Si diffraction peaks were observed besides the Si substrate diffraction peaks when the second six Mg/Si samples were annealed under Ar gas atmosphere. In addition, compact and smooth Mg2Si thin films annealed under Ar gas atmosphere were obtained.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Effect of Sputtering Pressure on the Formation of Semiconducting Mg2Si Films

2010 ◽  
Vol 663-665 ◽  
pp. 166-169
Author(s):  
Qing Quan Xiao ◽  
Quan Xie ◽  
Ke Jie Zhao ◽  
Zhi Qiang Yu
Keyword(s):  
Film Growth ◽  
Diffraction Peak ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Main Diffraction Peak ◽  
Diffraction Peaks ◽  
Si Films ◽  
Sputtering Pressure

Semiconducting Mg2Si films were fabricated on Si (111) substrates by magnetron sputtering and subsequent annealing, and the effects of sputtering pressure on the Mg2Si film growth were studied. The structural and morphological properties of Mg2Si films were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that the Mg2Si (220) main diffraction peak intensity increased and then decreased with the increasing of sputtering pressure. The (220) diffraction peak got its maximum at 3.0 Pa sputtering pressure. The intensity of Mg2Si (200) and (400) diffraction peaks increased rapidly as the sputtering pressure decreased when the pressure was lower than 1.5 Pa. The films prepared at higher sputtering pressure had very irregular microstructures, and the surface of semiconducting Mg2Si films became smoother with the decreasing of the sputtering pressure.

Growth of (Zr,Ti)N Thin Films by Ion-Assisted Dual D.C. Reactive Magnetron Sputtering

2008 ◽  
Vol 136 ◽  
pp. 133-138 ◽  
Author(s):  
Satreerat K. Hodak ◽  
T. Seppänen ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Ion Bombardment ◽  
Growth Conditions ◽  
Reactive Magnetron Sputtering ◽  
Silicon Substrates ◽  
Diffraction Measurement ◽  
Reactive Magnetron ◽  
X Ray Diffraction

The ternary nitride (Zr,Ti)N thin films were grown on silicon substrates by ion-assisted dual d.c. reactive magnetron sputtering technique. The substrates were exposed to ion bombardment with varying kinetic energy in the range of 3-103 eV under N/Ar ratio of 1:3. The (Zr0.6Ti0.4)N was formed at all growth conditions. X-ray diffraction measurement indicates the presence of (Zr,Ti)N solid solution with (111) and (200) preferred orientations. The (200) orientation is only present when the films are grown at ion bombardment energies higher than 33 eV. Optimum conditions for film growth produced hardness in the range of 27-29 GPa.

scholarly journals Effect of Annealing Atmosphere on the Properties of Electrochemically Deposited Cu2ZnSnS4 (CZTS) Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
B. S. Pawar ◽  
S. M. Pawar ◽  
K. V. Gurav ◽  
S. W. Shin ◽  
J. Y. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Trisodium Citrate ◽  
Band Gap Energy ◽  
Single Step ◽  
Complexing Agent ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
Electrochemically Deposited ◽  
Diffraction Peaks ◽  
Czts Thin Films

The Cu2ZnSnS4 (CZTS) thin films have been electrochemically deposited from a weak acidic medium (pH 4.50~5.00) onto Mo- coated and ITO-coated glass substrate by using single-step electrodeposition method. Trisodium citrate was used as a complexing agent. The effect of annealing atmospheres such as Ar, N2, N2+H2S on the structural, morphological, compositional, and optical properties of CZTS thin films has been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and optical absorption techniques, respectively. XRD studies reveal that the as-deposited CZTS film is amorphous in nature. Upon annealing in different atmospheres, a relatively more intense and sharper diffraction peaks (112), (200), (220), and (312) of kesterite crystal structure with uniform and densely packed surface morphology are observed in N2+H2S atmosphere. Absorption study shows that the band gap energy of as-deposited CZTS thin film is 2.8 eV whereas after annealing, it is found to be 1.48, 1.76, and 1.53 eV for Ar, N2, N2+H2S atmospheres.

Effect of Sputtering Conditions on the Microstructures of YNiBi Thin Film

2013 ◽  
Vol 341-342 ◽  
pp. 149-152
Author(s):  
Guo Hua Wang ◽  
Niu Yi Sun ◽  
Juan Qin ◽  
Wei Min Shi ◽  
Lin Jun Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Structure ◽  
Root Mean Square Roughness ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diffraction Peaks ◽  
Xrd Patterns ◽  
Sputtering Pressure

Half-Heusler compound YNiBi thin films have been prepared by direct current (DC) magnetron sputtering from an YNiBi target. The film structure and surface morphology of YNiBi thin films were analyzed with X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical properties of the films were studied by Hall measurements. XRD patterns show that the films prepared at lower sputtering pressure and higher growth temperature exhibit minimum full width at half maximum (FWHM) and maximum diffraction peaks which belong to the same family of crystal planes. Results of AFM reveal that the surface of a variety of fabricated YNiBi films is smooth and keeps good adhesion to the substrate. The increasing of substrate temperature and slightly lowering of sputtering pressure are in favor of reducing the root mean square roughness during magnetron sputtering process. The film with high crystallinity has an electrical conductivity of 938 S/cm and carrier concentration of 2.15×1021cm-3.

ELECTRICAL CONDUCTING AND MECHANISM OF OXYGEN-DEFICIENT TIN OXIDE FILMS DEPOSITED BY RF MAGNETRON SPUTTERING AT VARIOUS O2/Ar RATIOS

2018 ◽  
Vol 25 (04) ◽  
pp. 1850093 ◽  
Author(s):  
QI WANG ◽  
CHENGBIAO WANG ◽  
CHANGCHUN LV ◽  
YANG WANG ◽  
ZHIJIAN PENG ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Ceramic ◽  
X Ray Diffraction ◽  
Electrical Conducting ◽  
Diffraction Peaks ◽  
Main Defect ◽  
Tin Oxide Films

Oxygen-deficient tin oxide thin films were prepared by radiofrequency magnetron sputtering with a sintered non-stoichiometric tin oxide ceramic target under an atmosphere of various ratios of O2/Ar from pure Ar to 1:1. X-ray diffraction analysis showed that the thin films were polycrystalline with relatively strong (1 1 0), (1 0 1) and (2 1 1) diffraction peaks. Scanning electron microscopy observation revealed that the thin films prepared at different O2/Ar ratios were all of relatively dense and homogeneous structure. With increasing O2/Ar ratio, the grain size of the films decreased slightly, and their chemical composition became close to the stoichiometric SnO2; but the deposition rate as well as film thickness increased first and then decreased sharply. It was revealed that the main defect in obtained films was oxygen vacancy (VO), and as the O2/Ar ratio increased, the concentration of VO fell down monotonously, which would lead to an increased electrical resistivity.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Polyaniline/SnO2 Nanocomposite Sensor for NO2 Gas Sensing at Low Operating Temperature

2015 ◽  
Vol 14 (04) ◽  
pp. 1550011 ◽  
Author(s):  
A. Sharma ◽  
M. Tomar ◽  
V. Gupta ◽  
A. Badola ◽  
N. Goswami
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
High Sensitivity ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Chemical Route ◽  
Sensing Properties ◽  
Response Recovery ◽  
Transmission Electron ◽  
Gas Sensing Properties

In this paper gas sensing properties of 0.5–3% polyaniline (PAni) doped SnO 2 thin films sensors prepared by chemical route have been studied towards the trace level detection of NO 2 gas. The structural, optical and surface morphological properties of the PAni doped SnO 2 thin films were investigated by performing X-ray diffraction (XRD), Transmission electron microscopy (TEM) and Raman spectroscopy measurements. A good correlation has been identified between the microstructural and gas sensing properties of these prepared sensors. Out of these films, 1% PAni doped SnO 2 sensor showed high sensitivity towards NO 2 gas along with a sensitivity of 3.01 × 102 at 40°C for 10 ppm of gas. On exposure to NO 2 gas, resistance of all sensors increased to a large extent, even greater than three orders of magnitude. These changes in resistance upon removal of NO 2 gas are found to be reversible in nature and the prepared composite film sensors showed good sensitivity with relatively faster response/recovery speeds.

Growth study of epitaxial FexZn1−xF2 thin films

2001 ◽  
Vol 16 (6) ◽  
pp. 1769-1775 ◽  
Author(s):  
J. McChesney ◽  
M. Hetzer ◽  
H. Shi ◽  
T. Charlton ◽  
D. Lederman
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Magnetic Phase Diagram ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Growth Study ◽  
Lattice Match ◽  
Different Temperatures ◽  
Bulk Single Crystals ◽  
The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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