Nitrogen Concentration in N-Implanted Gold on the Formation of Gold Nitride

2011 ◽  
Vol 413 ◽  
pp. 195-200
Author(s):  
Jian Hua Yang
Keyword(s):  
Depth Profile ◽  
Gold Film ◽  
Nitrogen Concentration ◽  
Ion Concentration ◽  
Implantation Energy ◽  
High Fluences ◽  
Nitride Formation ◽  
Concentration Depth Profile ◽  
Nitrogen Ions ◽  
Dynamic Computer Simulation

Although gold nitride has been produced by Siller and co-workers by irradiating a gold film with low energy nitrogen ions, the unsuccessful reason for previous attempts to produce gold nitride is not clear yet. In general, nitrogen concentration depth profile probably influences gold nitride formation. But it is difficult to measure nitrogen concentration depth profile in the N-implanted layer at a low implantation energy of 500 eV. Ion concentration depth profiles in amorphous solids can be determined rather accurately in the case of low implantation fluences using TRIM code. The sputtering effect of ion implantation of high fluences on the concentration depth profile of implanted nitrogen ions should be considered. A dynamic computer simulation based on a TRIDYN code has been applied to calculate nitrogen concentration depth profile in a N-implanted gold film using the different parameters of the fluence and energy in the present work. The sputtering effect of a high fluence on the concentration depth profile can be considered in the TRIDYN simulation. The parameters of fluence and energy that enable to get the gold nitride in thin film are analyzed based on the simulation results. It is put forward some possible ways to improve the formation of gold nitride further.

Investigation of Low Energy Nitrogen Ion Implantation into Gold

2012 ◽  
Vol 461 ◽  
pp. 840-843 ◽  
Author(s):  
Jian Hua Yang
Keyword(s):  
Nitrogen Concentration ◽  
Experimental Studies ◽  
Low Energy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Weak Evidence ◽  
Nitride Formation ◽  
Concentration Depth Profile ◽  
Nitrogen Ion ◽  
Dynamic Computer Simulation

Noble metal nitrides have stimulated many theoretical and experimental studies on account of their abnormally high bulk modulus and intriguing electronic properties. Gold surfaces are implanted by the nitrogen ions of low energy in the present work. The surface morphology are observed by atomic force microscopy (AFM).The surface microstructure are studied with X-ray diffraction (XRD). The results of XRD and AFM show weak evidence for the formation of a nano-scale gold nitride. The nitrogen concentration depth profile in gold film has been calculated using a dynamic computer simulation to determine the possible crystal structure of the Au-N system. The mechanisms of gold nitride formation are discussed in the end.

scholarly journals MeV Multiple Implantation of Nitrogen Ions to Pure Chromium. II. Effect of Heat Treatment on the Depth Profile of Nitrogen Concentration.

1992 ◽  
Vol 43 (12) ◽  
pp. 1216-1222
Author(s):  
Fumitaka NISHIYAMA ◽  
Satoshi YOSHIDA ◽  
Hiroki SAKAMOTO ◽  
Takeshi HIROKAWA ◽  
Yoshiyuki KISO ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Depth Profile ◽  
Nitrogen Concentration ◽  
Nitrogen Ions ◽  
Pure Chromium

Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

2002 ◽  
Vol 716 ◽  
Author(s):  
Takaaki Amada ◽  
Nobuhide Maeda ◽  
Kentaro Shibahara
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Nitrogen Concentration ◽  
Implantation Dose ◽  
Control Technique ◽  
High Dose ◽  
Implantation Energy ◽  
20 Nm ◽  
Large Work ◽  
Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

Computer Simulation of Ion Beam Enhanced Deposition of Titanium Nitride Films

1989 ◽  
Vol 157 ◽  
Author(s):  
Wang Xi ◽  
Zhou Jiankun ◽  
Chen Youshan ◽  
Liu Xianghuai ◽  
Zou Shichang
Keyword(s):  
Computer Simulation ◽  
Titanium Nitride ◽  
Film Growth ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Ion Source ◽  
Nitrogen Gas ◽  
Titanium Layer ◽  
Adsorption Of Nitrogen ◽  
Nitrogen Ions

ABSTRACTA Monte-Carlo computer simulation has been performed to describe, at atomic level, the growth of titanium nitride films formed by ion beam enhanced deposition (IBED). The simulation is based on a random target, fixed free path of moving particles and binary collisions. An alternate process of deposition of titanium atoms and implantation of nitrogen ions is applied instead of the actual continuous and synchronous process of IBED. According to the actual conditions, the adsorption of nitrogen gas, which is leaked out from the ion source, at the fresh titanium layer surface has been considered. In addition, the change of the composition profile and the density profile during film growth is taken into account. It is demonstrated that the width of the intermixed region between the film and substrate increases with the increase of the atomic arrival ratio, R, of implanted nitrogen ions to deposited titanium atoms. When the titanium deposition rate is low, the nitrogen concentration of the film is relatively insensitive to R, indicating that a dominant contribution to the nitrogen concentration is derived from the nitrogen gas leaked out from the ion source. The results obtained in this study are in agreement with the experimental measurements.

Optical Waveguides in Thermally Grown SiO2 on Si Using Nitrogen Ion Implantation

1991 ◽  
Vol 244 ◽  
Author(s):  
S. P. Wong ◽  
E. Y. B. Pun ◽  
W. T. Lam ◽  
P. S. Chung
Keyword(s):  
Optical Waveguides ◽  
Nitrogen Concentration ◽  
Silicon Substrates ◽  
Optical Wave ◽  
Implantation Energy ◽  
Coupling Technique ◽  
Waveguide Loss ◽  
Prism Coupling ◽  
Nitrogen Ion ◽  
Thermally Grown

ABSTRACTMulti-energy nitrogen implantation into thermally grown SiO2 on silicon substrates has been performed and the optical wave-guiding properties of this structure has been studied. The implantation energy used was in Ie range of 40 KeV to 150 keV, and the doses used were typically 2×1016 to 2×10−2. The energies and doses were chosen to achieve relatively flat implanted nitrogen profiles. It is found that optical waveguides can be formed when the implanted nitrogen concentration is sufficiently high. Both prism-coupling technique and end-fire coupling technique were used to test the implanted waveguides fabricated. Many m-lines including dark modes were observed by the prism-coupling method. This structure is found to be very stable against thermal annealing and there is no significant change observed in the waveguiding properties even after annealing at 1000 °C for four hours. The waveguide loss was found to be typically 0.6 dB/cm before annealing and can be further reduced to about 0.3 dB/cm after annealing.

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