Investigation of Low Energy Nitrogen Ion Implantation into Gold

2012 ◽  
Vol 461 ◽  
pp. 840-843 ◽  
Author(s):  
Jian Hua Yang
Keyword(s):  
Nitrogen Concentration ◽  
Experimental Studies ◽  
Low Energy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Weak Evidence ◽  
Nitride Formation ◽  
Concentration Depth Profile ◽  
Nitrogen Ion ◽  
Dynamic Computer Simulation

Noble metal nitrides have stimulated many theoretical and experimental studies on account of their abnormally high bulk modulus and intriguing electronic properties. Gold surfaces are implanted by the nitrogen ions of low energy in the present work. The surface morphology are observed by atomic force microscopy (AFM).The surface microstructure are studied with X-ray diffraction (XRD). The results of XRD and AFM show weak evidence for the formation of a nano-scale gold nitride. The nitrogen concentration depth profile in gold film has been calculated using a dynamic computer simulation to determine the possible crystal structure of the Au-N system. The mechanisms of gold nitride formation are discussed in the end.

Nitrogen Concentration in N-Implanted Gold on the Formation of Gold Nitride

2011 ◽  
Vol 413 ◽  
pp. 195-200
Author(s):  
Jian Hua Yang
Keyword(s):  
Depth Profile ◽  
Gold Film ◽  
Nitrogen Concentration ◽  
Ion Concentration ◽  
Implantation Energy ◽  
High Fluences ◽  
Nitride Formation ◽  
Concentration Depth Profile ◽  
Nitrogen Ions ◽  
Dynamic Computer Simulation

Although gold nitride has been produced by Siller and co-workers by irradiating a gold film with low energy nitrogen ions, the unsuccessful reason for previous attempts to produce gold nitride is not clear yet. In general, nitrogen concentration depth profile probably influences gold nitride formation. But it is difficult to measure nitrogen concentration depth profile in the N-implanted layer at a low implantation energy of 500 eV. Ion concentration depth profiles in amorphous solids can be determined rather accurately in the case of low implantation fluences using TRIM code. The sputtering effect of ion implantation of high fluences on the concentration depth profile of implanted nitrogen ions should be considered. A dynamic computer simulation based on a TRIDYN code has been applied to calculate nitrogen concentration depth profile in a N-implanted gold film using the different parameters of the fluence and energy in the present work. The sputtering effect of a high fluence on the concentration depth profile can be considered in the TRIDYN simulation. The parameters of fluence and energy that enable to get the gold nitride in thin film are analyzed based on the simulation results. It is put forward some possible ways to improve the formation of gold nitride further.

Structural and mechanical properties of tantalum thin films ected by nitrogen ion implantation

2020 ◽  
Vol 34 (15) ◽  
pp. 2050163 ◽  
Author(s):  
A. H. Ramezani ◽  
S. Hoseinzadeh ◽  
Zh. Ebrahiminejad
Keyword(s):  
Friction Coefficient ◽  
Wear Mechanism ◽  
Mechanism Study ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coefficient Measurement ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Tantalum bulk were implanted with nitrogen ions at different dose of [Formula: see text] ions/cm2 to [Formula: see text] ions/cm2 and at a energy 30 keV. The implanted samples were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), microhardness testing, friction coefficient measurements and wear mechanism study. Scanning electron microscopy (SEM) images were used to analyze the friction of samples. The XRD results confirmed that the increasing dose affects the formation of the TaN phase. Based on AFM images, the morphology and surface roughness change proportionally to grain size after implantation. It was found that hardness increases as energy increases. From the friction coefficient measurement, this coefficient decreases as energy increases. For the un-implanted sample, the wear mechanism has abrasion, and with increasing the energy, it shifts to being flake and sticky.

scholarly journals Current mapping of low-energy (120 eV) helium and hydrogen irradiated tungsten by conductive atomic force microscopy

2017 ◽  
Vol 486 ◽  
pp. 191-196 ◽  
Author(s):  
Hongyu Fan ◽  
Takashi Endo ◽  
Zhenghua Bi ◽  
Weibin Yan ◽  
Somei Ohnuki ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Low Energy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Effect of Argon Addition on Nitrogen Containing Carbon Films Prepared by Hot Carbon Filament CVD

1999 ◽  
Vol 593 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Shinobu Ohnita ◽  
Nobuaki Kitazawa ◽  
Yoshikazu Nakamura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Carbon Films ◽  
Nitrogen Atmosphere ◽  
Carbon Filament ◽  
X Ray ◽  
Force Microscopy ◽  
Carbon And Nitrogen ◽  
Atomic Force ◽  
High Nitrogen Concentration

ABSTRACTNitrogen containing amorphous carbon (a-CNx) films were prepared on silicon single crystal substrates by heating a carbon filament in low pressure nitrogen atmosphere and the effects of argon addition to nitrogen atmosphere were studied by changing the argon fraction under the total pressure of 100 Pa. The growth rate of the films is found to decrease with increasing the argon fraction. x-ray photoelectron spectroscopy shows that the films are composed of carbon and nitrogen and the optimal fraction of argon addition is observed for increasing the nitrogen concentration. Observations by atomic force microscopy reveal that the film surfaces are covered with particle-like features and the size of the features decreases drastically by argon addition. It is concluded that argon addition to the reactant gas is effective in synthesizing a-CNx films with the smooth surface and high nitrogen concentration

Surface Cusp Formation in Si Homoepitaxy

2004 ◽  
Vol 832 ◽  
Author(s):  
J.-M. Baribeau ◽  
X. Wu ◽  
M. Beaulieu ◽  
D.J. Lockwood ◽  
N.L. Rowell
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Surface Density ◽  
Growth Direction ◽  
Low Energy ◽  
Large Area ◽  
Columnar Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Si Films

ABSTRACTWe report a study of the surface morphology and microstructure of Si epitaxial layers grown by MBE on (001) Si at temperatures at which epitaxy breakdown is observed. For films grown in the 400 - 450 °C temperature range the epitaxy breakdown is very sluggish and characterized by a columnar growth and the formation of surface cusps. We have used atomic force microscopy to study the shape, size and distribution of those surface cusps. Surface cusps are of square shape with sides predominantly oriented along <110> directions and are typically of 50 nm size and 5 nm depth. The cusps can be very regular in size and their surface density (typically of 109-1010 cm-2) is dependent on the growth temperature. The epitaxial Si in this temperature regime exhibits a residual strain of the order of -5 × 10−5 in the growth direction. Photoluminescence (PL) from cusped Si films is characterized by a broad PL at low energy possibly due to impurities incorporation at low growth temperatures. We have observed that Ge self-assembled dots can be grown on cusped surfaces. Large area AFM measurements reveal that surface cusps are “decorated” by clusters of large dome-like Ge dots, while a lower density of smaller dome and pyramid shape islands are seen away from the cusps.

Observation of a Latent Scratch on Chemo-Mechanical Polished 4H-SiC Wafer by Mirror Projection Electron Microscopy

2018 ◽  
Vol 924 ◽  
pp. 543-546 ◽  
Author(s):  
Toshiyuki Isshiki ◽  
Masaki Hasegawa ◽  
Takahiro Sato ◽  
Kenji Kobayashi ◽  
Atsushi Miyaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Low Energy ◽  
Dark Line ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Arrays ◽  
Scanning Transmission ◽  
Sic Wafer

A latent scratch which is an extremely shallow scratch induced on a SiC wafer during chemo-mechanical polishing (CMP) has been investigate by mirror projection electron microscopy (MPJ), low-energy scanning electron microscopy (LESEM), atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM). The latent scratch, which is difficult to detect by using optical microscopes, was easily visualized by MPJ as a high contrast dark line. The morphology of detected latent scratch is less than 1nm in depth and about 30nm in full width at half depth by AFM evaluation. The STEM observation revealed the latent scratch was accompanied two dislocation arrays. One contains loop-like dislocations and the other contains spiky dislocations, both lying in the wafer at a few ten nm in depth.

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