Investigation of the Temperature Character of IGBT Wire Bonding Lift-Off Based the 3-D Thermal-Electro Coupling FEM

2012 ◽  
Vol 616-618 ◽  
pp. 1689-1692
Author(s):  
Li Bing Zheng ◽  
Han Li ◽  
Peng Yun Jin ◽  
Hua Chao Fang ◽  
Chun Lei Wang ◽  
...  
Keyword(s):  
Finite Elements ◽  
Failure Mode ◽  
Failure Modes ◽  
Wire Bonding ◽  
Structure Design ◽  
Thermal Coupling ◽  
Finite Elements Modeling ◽  
Igbt Module ◽  
Lift Off ◽  
Influence Degree

Al wire bonding lift-off is one of the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of Al wire bonding lift-off to the performance of IGBT module. This method and the corresponding results help to evaluate Al wire bonding lift-off how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

Investigation of the Temperature Character of IGBT Failure Mode Based the 3-D Thermal-Electro Coupling FEM

2013 ◽  
Vol 655-657 ◽  
pp. 1576-1580 ◽  
Author(s):  
Pu Zhen He ◽  
Li Bing Zheng ◽  
Hua Chao Fang ◽  
Chun Lei Wang ◽  
Jun Hua
Keyword(s):  
Finite Elements ◽  
Boundary Conditions ◽  
Failure Mode ◽  
Failure Modes ◽  
Structure Design ◽  
Thermal Coupling ◽  
Finite Elements Modeling ◽  
Igbt Module ◽  
Lift Off ◽  
Influence Degree

Al wire bonding lift-off and solder delamination are the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of two kinds of failure modes to the performance of IGBT module. The results suggest the bonding lift-off has more influence than the solder delamination on the same load and boundary conditions. This method and the corresponding results help to evaluate these failure modes how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

Development of Lead-Free Flip Chip Package and Its Reliability

2003 ◽  
Author(s):  
Jeffrey C. B. Lee ◽  
Sting Wu ◽  
H. L. Chou ◽  
Yi-Shao Lai
Keyword(s):  
Failure Mode ◽  
Flip Chip ◽  
Failure Modes ◽  
Solder Bump ◽  
Wire Bonding ◽  
Point Of View ◽  
Lead Free ◽  
Temperature Cycle ◽  
Snagcu Solder ◽  
Temperature Cycle Test

SnAgCu solder used in laminate package like PBGA and CSP BGA to replace eutectic SnPb as interconnection has become major trend in the electronic industry. But unlike well-known failure mode of wire bonding package, flip chip package with SnAgCu inner solder bump and external solder ball as electrical interconnection present a extremely different failure mode with wire-bonding package from a point of view in material and process. In this study, one 16mm×16mm 3000 I/O SnAgCu wafer bumping using screen-printing process was explored including the effects of reflow times, high temperature storage life (HTSL) and temperature cycle test (TCT) on bump shear strength. Furthermore, the qualified wafer bumping is assembled by flip chip assembly with various underfill material and specific organic build-up substrate, then is subject to MSL4/260°C precondition and temperature cycle test to observe the underfill effect on SnAgCu bump protection and solder joint life. Various failure modes in the flip chip package like solder bump, underfill and UBM and so on, will be scrutinized with SEM. And finally, best material combination will be addressed to make the lead free flip package successful.

scholarly journals A Comprehensive Failure Risk Assessment Method of Machining Center Component Based on Topology Analysis

2022 ◽  
Vol 12 (1) ◽  
pp. 423
Author(s):  
Liming Mu ◽  
Yingzhi Zhang ◽  
Guiming Guo
Keyword(s):  
Risk Assessment ◽  
Failure Mode ◽  
Failure Modes ◽  
Assessment Method ◽  
Topology Analysis ◽  
Propagation Failure ◽  
Machining Center ◽  
Failure Risk ◽  
Risk Assessment Method ◽  
Influence Degree

The risk assessment of the failure mode of the traditional machining center component rarely considers the topological characteristics of the system and the influence of propagation risks, which makes the failure risk assessment results biased. Therefore, this paper proposes a comprehensive failure risk assessment method of a machining center component based on topology analysis. On the basis of failure mode and cause analysis, considering the correlation of failure modes, Analytic Network Process (ANP) is used to calculate the influence degree of failure modes, and it is combined with component failure mode frequency ratio and failure rate function to calculate independent failure risk. The ANP model of the machining center is transformed into a topological model, and the centrality measurement of network theory is used to analyze the topology of the machining center. The weight of the topological structure index is measured by subjective and objective weighting methods, and then the importance degree of the machining center component is calculated. In this paper, the coupling degree function is introduced to calculate the importance of the connection edge, which is combined with the failure probability to calculate the failure propagation influence degree, and the component propagation failure risk is calculated based on this. Finally, the independent failure risk and the propagation failure risk of the component are integrated to realize the failure risk assessment of the component. Taking a certain type of machining center as an example to illustrate the application, compared with the traditional assessment method, the effectiveness and advancement of the method proposed in this paper have been verified.

scholarly journals Conceptual Scheme Decision Model for Mechatronic Products Driven by Risk of Function Failure Propagation

2020 ◽  
Vol 12 (17) ◽  
pp. 7134
Author(s):  
Liting Jing ◽  
Qingqing Xu ◽  
Tao Sun ◽  
Xiang Peng ◽  
Jiquan Li ◽  
...  
Keyword(s):  
Failure Mode ◽  
Decision Model ◽  
Failure Modes ◽  
Risk Index ◽  
Propagation Model ◽  
Design Stage ◽  
Design Decision ◽  
Conceptual Scheme ◽  
Failure Propagation ◽  
Influence Degree

Reliability is a major performance index in the electromechanical product conceptual design decision process. As the function is the purpose of product design, the risk of scheme design is easy to be caused when there is a failure (i.e., function failure). However, existing reliability analysis models focus on the failure analysis of functions but ignore the quantitative risk assessment of conceptual schemes when function failures occur. In addition, design information with subjectivity and fuzziness is difficult to introduce the risk index into the early design stage for comprehensive decisions. To fill this gap, this paper proposes a conceptual scheme decision model for mechatronic products driven by the risk of function failure propagation. Firstly, the function structure model is used to construct the function fault propagation model, so as to obtain the influence degree of the subfunction failure. Secondly, the principle solution weight is calculated when the function failure is propagated, and the influence degree of the failure mode is integrated to obtain the severity of the failure mode on the product system. Thirdly, the risk value of failure mode is calculated by multiplying the severity and failure probability of failure mode, and the risk value of the scheme is obtained based on the influence relationship between failure modes. Finally, the VIKOR (Višekriterijumska Optimizacija i kompromisno Rešenje) method is used to make the optimal decision for the conceptual scheme, and then take the cutting speed regulating device scheme of shearer as an example to verify the effectiveness and feasibility of the proposed decision model.

Combine Nanoprobing Technique with Difference Analysis to Identify Nonvisual Failures

2006 ◽  
Author(s):  
Cha-Ming Shen ◽  
Tsan-Cheng Chuang ◽  
Jie-Fei Chang ◽  
Jin-Hong Chou
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Electrical Characteristic ◽  
The Novel ◽  
Difference Analysis ◽  
Original Idea ◽  
Deductive Method ◽  
Complete Measurement

Abstract This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experiment. The objective is to overcome the difficulty in detecting non-visual, erratic, and complex failure modes. And the original idea of this deductive method is based on the complete measurement of electrical characteristic by nano-probing and difference analysis. The capability to distinguish erratic and invisible defect was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic.

Case Study and Fault Modeling for Wrong Redundancy Evaluation on DRAM Devices

2007 ◽  
Author(s):  
Martin Versen ◽  
Dorina Diaconescu ◽  
Jerome Touzel
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Fault Modeling ◽  
Mode Analysis ◽  
Root Cause ◽  
Failure Mode Analysis

Abstract The characterization of failure modes of DRAM is often straight forward if array related hard failures with specific addresses for localization are concerned. The paper presents a case study of a bitline oriented failure mode connected to a redundancy evaluation in the DRAM periphery. The failure mode analysis and fault modeling focus both on the root-cause and on the test aspects of the problem.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

Failure mode and effect analysis (FMEA) to improve collaborative project-based learning: Case study of a Study and Research Path in mechanical engineering

2021 ◽  
pp. 030641902199904
Author(s):  
Elena Bartolomé ◽  
Paula Benítez
Keyword(s):  
Active Learning ◽  
Failure Mode ◽  
Mechanical Engineering ◽  
Failure Modes ◽  
Collaborative Study ◽  
Project Based Learning ◽  
Educational Process ◽  
Effect Analysis ◽  
Questions And Answers

Failure Mode and Effect Analysis (FMEA) is a powerful quality tool, widely used in industry, for the identification of failure modes, their effects and causes. In this work, we investigated the utility of FMEA in the education field to improve active learning processes. In our case study, the FMEA principles were adapted to assess the risk of failures in a Mechanical Engineering course on “Theory of Machines and Mechanisms” conducted through a project-based, collaborative “Study and Research Path (SRP)” methodology. The SRP is an active learning instruction format which is initiated by a generating question that leads to a sequence of derived questions and answers, and combines moments of study and inquiry. By applying the FMEA, the teaching team was able to identify the most critical failures of the process, and implement corrective actions to improve the SRP in the subsequent year. Thus, our work shows that FMEA represents a simple tool of risk assesment which can serve to identify criticality in educational process, and improve the quality of active learning.

scholarly journals A Review on IGBT Module Failure modes and Lifetime Testing

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Ahmed Abuelnaga ◽  
Mehdi Narimani ◽  
Amir Sajjad Bahman
Keyword(s):  
Failure Modes ◽  
Igbt Module ◽  
Lifetime Testing
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