Structural and Optical Properties of In0.27Ga0.73N/Si (111) Film Grown Using PA-MBE Technique

2012 ◽  
Vol 620 ◽  
pp. 368-372 ◽  
Author(s):  
Saleh H. Abud ◽  
Hassan Zainuriah ◽  
Fong Kwong Yam ◽  
Alaa J. Ghazai
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force

In this paper, InGaN/GaN/AlN/Si (111) structure was grown using a plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural and optical properties of grown film have been characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). Indium-mole fraction has been computed to be 0.27 using XRD data and Vegards law with high grain size and low tensile strain. Room-temperature photoluminescence revealed an intense peak at 534 nm (2.3 eV) related to our sample In0.27Ga0.73N.

Impact of Nitridation on Structural and Optical Properties of Epitaxial GaN Films Grown on M-Plane Sapphire by PAMBE

2015 ◽  
Vol 1736 ◽  
Author(s):  
Shruti Mukundan ◽  
Lokesh Mohan ◽  
Greeshma Chandan ◽  
Basanta Roul ◽  
S.B. Krupanidhi
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Compressive Strain ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Semipolar Gan ◽  
Nonpolar Gan ◽  
Gan Film

ABSTRACTGaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. Impact of nitridation on structural and optical properties of GaN film was investigated. The film grown on a nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. The high resolution X-ray diffraction studies confirmed the orientation of the GaN films. X-ray rocking curve showed better crystallinity of semipolar as compared to nonpolar GaN. Atomic force microscopy showed smoother films in case of nonpolar GaN which might be in account of the nitridation treatment. Room temperature photoluminescence study showed nonpolar GaN to have higher value of compressive strain as compared to semipolar GaN film, which was further confirmed by room temperature Raman spectroscopy. Despite the fact that it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode, we hereby report the development of non-polar GaN of usable quality, on an m-plane sapphire, involving controlled steps of nitridation.

High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001)

1999 ◽  
Vol 572 ◽  
Author(s):  
H. Siegle ◽  
Y. Kim ◽  
G. S. Sudhir ◽  
J. Kruger ◽  
P. Perlin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Substrate Material ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Alternative Substrate ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTWe report on growth of GaN on Germanium as an alternative substrate material. The GaN films were deposited on Ge(001) substrates by plasma-assisted molecular beam epitaxy. Atomic force microscopy, x-ray diffraction, photoluminescence, and Raman spectroscopy were used to characterize the structural and optical properties of the films. We observed that the Ga/N ratio plays a crucial role in determining the phase purity and crystal quality. Under N-rich conditions the films were phase-mixed, containing cubic and hexagonal GaN, while in the Ga-rich regime they were purily hexagonal. The latter samples show bandedge luminescence with linewidths as small as 31 meV at low temperatures.

scholarly journals Laser induced plasma of cadmium oxide: structural, morphological and optical properties

2021 ◽  
Vol 2114 (1) ◽  
pp. 012012
Author(s):  
Tamara S. Hussein ◽  
Ala F. Ahmed
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Cadmium Oxide ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Optical Energy Gap ◽  
X Ray ◽  
Laser Induced Plasma ◽  
Atomic Force ◽  
Doping Ratio

Abstract In this study, the effect of grafting with Iron (Fe) ratios (0.1, 0.3 and 0.5) on the structural and optical properties of cadmium oxide films (CdO) was studied, as these films were prepared on glass bases using the method of pulse laser deposition (PLD). The crystallization nature of the prepared films was examined by X-ray diffraction technique (XRD), which showed that the synthesis of the prepared films is polycrystalline, and Atomic Force Microscope (AFM) images also showed that the increased vaccination with Iron led to an increase in the crustal size ratio and a decrease in surface roughness, The absorption coefficient was calculated and the optical energy gap for the prepared thin films. It was found the absorption decreases and the energy gap decreases with the increase of doping ratio.

scholarly journals Dielectric Function of AlN Grown on Si (111) by MBE

1999 ◽  
Vol 572 ◽  
Author(s):  
Stefan Zollner ◽  
Atul Konkar ◽  
R. B. Gregory ◽  
S. R. Wilson ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Buffer Layers ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimensional Growth ◽  
Peak Widths

ABSTRACTWe measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Structural and Optical Properties of Thermally Evaporated CdTe Film

2013 ◽  
Vol 678 ◽  
pp. 131-135 ◽  
Author(s):  
D. Geethalakshmi ◽  
N. Muthukumarasamy ◽  
R. Balasundaraprabhu
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Room Temperature ◽  
Cdte Film ◽  
Annealing Duration ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Cooling Cycle ◽  
X Ray ◽  
Glass Substrates

Abstract. Cadmium Telluride (CdTe) films were thermally evaporated on to glass substrates at room temperature. By varying the amount of source material, thin films of thickness ranging from 90 nm – 635 nm have been prepared. Film of thickness 200 nm was annealed to 400°C for different durations of time and also subjected to alternate heating - cooling cycle. X-ray diffraction study was carried out to study the effect of film thickness, annealing duration and alternate heating-cooling cycle on the structural properties of the films. The transmittance spectra recorded using a UV-Vis-NIR spectrophotometer was used to study the change in optical properties of the films with respect to film thickness, annealing duration and alternate heating-cooling cycle.

MBE GROWN ZnSSe/ZnMgSSe MQW STRUCTURE FOR BLUE VCSEL

2007 ◽  
Vol 06 (05) ◽  
pp. 407-410 ◽  
Author(s):  
I. P. KAZAKOV ◽  
V. I. KOZLOVSKY ◽  
V. P. MARTOVITSKY ◽  
YA. K. SKASYRSKY ◽  
M. D. TIBERI ◽  
...  
Keyword(s):  
Room Temperature ◽  
Structure Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Optical Scanning ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Two Phases

ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.

Structural, Magnetic and Microwave Absorbing Properties of Nanosized NiXZn1-xFe2O4 Powders Synthesized by Sol-Gel Technique

2010 ◽  
Vol 148-149 ◽  
pp. 1144-1147
Author(s):  
Xiang Rong Zhu ◽  
Lin Feng Lu ◽  
Hong Lie Shen
Keyword(s):  
Room Temperature ◽  
Structural Characteristics ◽  
Sol Gel ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gel Technique ◽  
Soft Magnetism

NixZn1-xFe2O4 (x=0.4, 0.6) powders are synthesized by sol-gel technique. The X-ray diffraction (XRD) measurements show their polycrystalline spinel structural characteristics. Both XRD and Atomic Force Microscopy demonstrate the samples are nanosized. At room temperature typical soft magnetism is exhibited by the samples. The reflection attenuation resulting from microwave absorption would reach to 1.9 dBm over the frequency range 6 GHz - 10 GHz when the samples are paved on a 10 cm  10 cm square aluminum plate with a thickness of about 0.35 mm.

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