Study of Microstructure and Properties of Corundum-Calcium Hexaluminate Composite Aggregate

2013 ◽  
Vol 690-693 ◽  
pp. 433-437
Author(s):  
Lv Ping Fu ◽  
Hua Zhi Gu ◽  
Bo Du ◽  
Ao Huang ◽  
Zheng Kun Li

Effect of adding CaCO3 on the microstructure and properties of corundum was studied, with corundum modified by adding CaCO3 powder, by means of XRD, SEM etc. The experimental results show that when the quantity of CaCO3 powder is not more than 14.1wt%, would obtain corundum-calcium hexaluminate composite aggregate. When a little hexaluminate is generated, it would not increase porosity significantly but closed porosity increase slightly, and the heat conductivity is lower than tabular corundum. Calcium hexaluminate in aggregate grow well and are flakes. There are large numbers of small pores, and distributed uniformly. Composite aggregate has preferable performance of sintered and low thermal conductivity when hexaluminate generative capacity is about 27%.

2016 ◽  
Vol 848 ◽  
pp. 454-459
Author(s):  
Cong Wu ◽  
Kang Zhao ◽  
Yu Fei Tang ◽  
Ji Yuan Ma

In order to solve the problem that low thermal conductivity of the plastics for the heat of LED, SiC/Phenolic resin for the heat of LED were fabricated combining powder metallurgy. The effects of particles diameters, content and adding nanoparticles on thermal conductivity of the fabricated composites were investigated, the mechanical properties were also characterized. The experimental results showed that the materials were obtained, and the insulation performance of the fabricated SiC/Phenolic resin was higher than the industry standard one, the thermal conductivity reached 4.1W/(m·k)-1. And the bending strength of the fabricated composites was up to 68.11MPa. The problem of low thermal conductivity of the material is expected to be solved. In addition, it is meaningful for improving LED life.


2019 ◽  
Vol 39 (14) ◽  
pp. 4202-4207 ◽  
Author(s):  
Binbin Dong ◽  
Feihong Wang ◽  
Junling Yu ◽  
Hamidreza Abadikhah ◽  
Sayed Ali Khan ◽  
...  

2014 ◽  
Vol 19 (2) ◽  
pp. 134-144 ◽  
Author(s):  
Tiago Jose Antoszczyszyn ◽  
Rodrigo Metz Gabriel Paes ◽  
Ana Sofia Clímaco Monteiro de Oliveira ◽  
Adriano Scheid

Nickel-based alloy IN 625 is used to protect components of aircrafts, power generation and oil refinery due to an association of toughness and high corrosion resistance. These properties are associated with the chemical composition and microstructure of coatings which depend on the processing parameters and the composition of the component being protected. This paper assessed impact of dilution on the microstructure and properties of the Ni alloy IN 625 deposited by Plasma Transferred Arc (PTA) on two substrates: carbon steel API 5L and stainless steel AISI 316L. Differences due to the interaction with the substrate were maximized analyzing single layer coatings, processed with three deposition current: 120, 150 and 180 A. Correlation with a cast Nickel-based alloy sample contributed to assess the impact of dilution on coatings. Dilution was determined by the area ratio and Vickers hardness measured on the transverse section of coatings. Scanning electron and Laser confocal microscopy and X-ray diffraction analysis were carried out to characterize the microstructure. Results indicated the increasing dilution with the deposition current was deeply influenced by the substrate. Dilution ranging from 5 to 29% was measured on coatings processed on the API 5L steel and from 22 to 51% on the low thermal conductivity AISI 316L steel substrate. Differences on the microstructure and properties of coatings can be associated with the interaction with each substrate. Higher fraction of carbides account for the higher coating hardness when processing on API 5L whereas the low thermal conductivity of AISI 316L and the higher Fe content in solid solution contributed to the lower hardness of coatings.


1997 ◽  
Vol 478 ◽  
Author(s):  
J.-P. Fleurial ◽  
T. Caillat ◽  
A. Borshchevsky

AbstractRecent experimental results on semiconductors with the skutterudite crystal structure show that these materials possess attractive transport properties and have a good potential for achieving ZT values substantially larger than for state-of-the-art thermoelectric materials. Both n-type and p-type conductivity samples have been obtained, using several preparation techniques. Associated with a low hole effective mass, very high carrier mobilities, low electrical resistivities and moderate Seebeck coefficients are obtained in p-type skutterudites. For a comparable doping level, the carrier mobilities of n-type samples are about an order of magnitude lower than the values achieved on p-type samples. However, the much larger electron effective masses and Seebeck coefficients make n-type skutterudites promising candidates as well. Unfortunately, the thermal conductivities of the binary skutterudite compounds are too large, particularly at low temperatures, to be useful for thermoelectric applications.Several approaches to the reduction of the lattice thermal conductivity in skutterudites are being pursued: heavy doping, formation of solid solutions and alloys, study of novel ternary and filled skutterudite compounds. All those approaches have already resulted in skutterudite compositions with substantially lower thermal conductivity values in these materials. Recently, superior thermoelectric properties in the moderate to high temperature range were achieved for compositions combining alloying and “filling” of the skutterudite structure. Experimental results and mechanisms responsible for low thermal conductivity in skutterudites are discussed.


2000 ◽  
Vol 626 ◽  
Author(s):  
Antje Mrotzek ◽  
Kyoung-Shin Choi ◽  
Duck-Young Chung ◽  
Melissa A. Lane ◽  
John R. Ireland ◽  
...  

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.


Author(s):  
Wenxin Wei ◽  
Guifeng Ma ◽  
Hongtao Wang ◽  
Jun Li

Objective: A new poly(ionic liquid)(PIL), poly(p-vinylbenzyltriphenylphosphine hexafluorophosphate) (P[VBTPP][PF6]), was synthesized by quaternization, anion exchange reaction, and free radical polymerization. Then a series of the PIL were synthesized at different conditions. Methods: The specific heat capacity, glass-transition temperature and melting temperature of the synthesized PILs were measured by differential scanning calorimeter. The thermal conductivities of the PILs were measured by the laser flash analysis method. Results: Results showed that, under optimized synthesis conditions, P[VBTPP][PF6] as the thermal insulator had a high glass-transition temperature of 210.1°C, high melting point of 421.6°C, and a low thermal conductivity of 0.0920 W m-1 K-1 at 40.0°C (it was 0.105 W m-1 K-1 even at 180.0°C). The foamed sample exhibited much low thermal conductivity λ=0.0340 W m-1 K-1 at room temperature, which was comparable to a commercial polyurethane thermal insulating material although the latter had a much lower density. Conclusion: In addition, mixing the P[VBTPP][PF6] sample into polypropylene could obviously increase the Oxygen Index, revealing its efficient flame resistance. Therefore, P[VBTPP][PF6] is a potential thermal insulating material.


2021 ◽  
Vol 327 ◽  
pp. 114223
Author(s):  
E. Bolen ◽  
E. Deligoz ◽  
H. Ozisik

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2449
Author(s):  
Hongyan Zhao ◽  
Jiangui Chen ◽  
Yan Li ◽  
Fei Lin

Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on loss accounts for most of the loss. This characteristic severely limits the applications of the SiC MOSFET at higher switching frequencies. Accordingly, an SRD-type drive circuit for a SiC MOSFET is proposed in this paper. The proposed SRD-type drive circuit can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET to ensure that the SiC MOSFET can work at a faster turn-on speed with a lower turn-on loss. In this paper, the basic principle of the proposed SRD-type drive circuit is analyzed, and a double pulse platform is established. For the purpose of proof-testing the performance of the presented SRD-type drive circuit, comparisons and experimental verifications between the traditional gate driver and the proposed SRD-type drive circuit were conducted. Our experimental results finally demonstrate the feasibility and effectiveness of the proposed SRD-type drive circuit.


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