Optimization of Hemocompatibility of Silicon Oxynitride Films

2009 ◽  
Vol 79-82 ◽  
pp. 727-730 ◽  
Author(s):  
Qi Yi Wang ◽  
Ping Yang ◽  
Ju Huang ◽  
Jun Liang ◽  
Hong Sun ◽  
...  
Keyword(s):  
Plasma Proteins ◽  
Platelet Adhesion ◽  
Single Crystal Silicon ◽  
Silicon Oxynitride ◽  
Medical Implants ◽  
Crystal Silicon ◽  
Angle Measurements ◽  
Contact Angle Measurements ◽  
Interventional Devices ◽  
Pyrolitic Carbon

Low hemocompatibility is a major problem of biomaterials that come in contact with blood. Surface modification has become an important way to improve the hemocompatibility of medical implants and interventional devices. Recently, researchers attempt to investigate the possibility of silicon oxynitride (Si-N-O) films to be applied as novel coating of blood-contacting biomaterials. However, no detailed investigation has been conducted. In this study, our work was focused on the optimization of the hemocompatibility of Si-N-O films prepared on single-crystal silicon wafers by unbalance magnetron sputtering (UBMS). The structure and chemical composition of films were characterized by X-ray photoelectron spectrometry (XPS), and their physical chemistry property was characterized by contact angle measurements. Platelet adhesion test was performed to investigate the platelet adhesion and activation. Our results suggested that films composed of Si3N4 and SiOx (x<2) exhibited better hemocompatibility than low temperature isotropic pyrolitic carbon (LTIC) that is a common material used in blood-contacting implants. It was also revealed that the higher N/O ratio in films composed of Si3N4 and SiOx (x<2) was attributed to the lower platelet adhesion and activation, and the interaction of samples with plasma proteins was demonstrated to play an important role in the adhesion and activation of platelets.

Giant Magnetoresistance of Electrostatic Self-Assembled Fe3O4 Nanocluster and Polymer Thin-Films

1999 ◽  
Vol 577 ◽  
Author(s):  
Yanjing Liu ◽  
Richard O. Claus ◽  
Fajian Zhang
Keyword(s):  
Aqueous Solution ◽  
Self Assembly ◽  
Giant Magnetoresistance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Angle Measurements ◽  
Vis Spectroscopy ◽  
Contact Angle Measurements ◽  
Assembly Technique ◽  
Quartz Substrates

ABSTRACTGiant magnetoresistance (GMR) as large as 25% at 25°C has been observed for multilayer ultrathin films of iron oxide (Fe3O4) nanoclusters and polyimide molecules alternately adsorbed onto single crystal silicon and quartz substrates using a novel self-assembly technique. This process involves the alternate dipping of a substrate into an aqueous solution of anionic polyimide precursor (polyamic salt, PAA) followed by dipping it into an aqueous solution of cationic polydiallyldimethylammonium chloride (PDDA)-coated Fe3O4, nanoparticles. The regular formation of alternating monolayers is verified by UV-vis spectroscopy and contact angle measurements. Vibrating sample magnetometry indicates the formation of ultrasoft films.

Comparative Studies of Hydrogen Termination on Single-Crystal Silicon Surfaces by FT-IR and Contact-Angle Measurements

1997 ◽  
Vol 51 (12) ◽  
pp. 1905-1909 ◽  
Author(s):  
Oliver M. R. Chyan ◽  
Junjun Wu ◽  
Jin-Jian Chen
Keyword(s):  
Contact Angle ◽  
Water Contact Angle ◽  
Silicon Surface ◽  
Silicon Surfaces ◽  
Crystal Silicon ◽  
Water Contact ◽  
Angle Measurements ◽  
Contact Angle Measurements ◽  
Hydrogen Termination ◽  
Termination Process

The hydrogen termination process on a Si(100) surface has been studied by multiple internal reflection infrared spectroscopy (MIR-IS) and contact-angle measurements. Three main silicon hydride absorption peaks at 2087, 2104, and 2114 cm−1 were found to gradually increase with the hydrofluoric (HF) acid etching. Eventually, a constant peak height was reached as an indication of complete hydrogen termination. Integration of all the surface hydrides absorption peaks (2000 to 2200 cm−1) provides direct quantitative evaluation of the hydrogen termination process. On the other hand, water contact-angle data were shown to consistently lag behind the IR measurement in determining the extent of hydrogen termination on the silicon surface. Analysis of the surface free energy of HF-etched silicon surfaces indicates that the degree of the hydrogen termination determined by water contact-angle measurements is subjected to inaccuracies due to the preferential hydrogen-bonding interaction between the water and silicon surface oxide.

Investigation of Platelet Adhesion Behavior on Si-N-O Films Synthesized by Unbalanced Magnetron Sputtering

2008 ◽  
Vol 47-50 ◽  
pp. 1407-1410
Author(s):  
Zhen Yi Shao ◽  
Ping Yang ◽  
Yong Xiang Leng ◽  
Qi Zhang ◽  
Guo Jiang Wan ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Platelet Adhesion ◽  
Blood Compatibility ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Adhesion Behavior ◽  
Isotropic Carbon

Si-N-O films have drawn researcher’s much attention recently due to their potential superiority in blood compatibility of biomaterials. In this paper, Si-N-O films were synthesized on <100> silicon substrates by pulsed reactive unbalanced magnetron sputtering a single crystal silicon target with high purity in a mixture atmosphere of Ar and N2. XPS and FTIR results showed the Si-N-O films synthesized at higher N2 flux could be described to random bonding model (RBM). In RBM, the Si2p existed in the form of a-Si3N4 and SiNνO4-ν (ν=0,1,2,3,4) components. Platelet adhesion behavior on Si-N-O films was assessed by platelet adhesion test and Lactate dehydrogenase (LDH) assay, qualitatively and quantitatively separately. The correlativity of film chemical structure and blood compatibility was investigated. The results of platelet adhesion and activation showed that the RBM film with higher N/O ratio exhibited favorable blood compatibility. It was shown that the Si-N-O film with specific composition and chemical bonding state was superior in blood compatibility compared to low temperature isotropic carbon (LTIC).

Time-Related Contact Angle Measurements with Human Plasma on Biomaterial Surfaces

1998 ◽  
Vol 21 (1) ◽  
pp. 35-39
Author(s):  
G. Rakhorst ◽  
H.C. Van Der Mei ◽  
W. Van Oeveren ◽  
H.T. Spijker ◽  
H.J. Busscher
Keyword(s):  
Contact Angle ◽  
Protein Adsorption ◽  
Human Plasma ◽  
Platelet Adhesion ◽  
Contact Angles ◽  
Initial Contact ◽  
Angle Measurements ◽  
Contact Angle Measurements ◽  
Albumin Adsorption ◽  
Fibrinogen Adsorption

Axisymmetric drop shape analysis by profile (ADSA-P) was used to assess in time contact angle changes of human plasma drops placed on four different biomaterials. Results were related with conventional blood compatibility measurements: albumin adsorption, fibrinogen adsorption and platelet adhesion. While contact angle measurements with water are material-related but constant in time, contact angle measurements with plasma changed over time owing to protein adsorption on the solid-liquid interface. The contact medium plasma did not influence the initial contact angle. Contact angles on PDMS decreased most in time (41 degrees) and demonstrated highest levels of conventionally measured albumin and fibrinogen adsorption and platelet adhesion. PTFE, with the lowest contact angle decrease over a 500 minutes period (19 degrees), showed low fibrinogen and albumin adsorption as well as low platelet adhesion. PU and HDPE demonstrated almost similar initial contact angles with plasma and contact angle decreases (26 and 27 degrees), intermediate protein adsorption, and platelet adhesion. We conclude that biocompatibility properties of the tested materials may be more related to the behaviour of their contact angles in time, than to the initial hydrophobic or hydrophilic state.

scholarly journals Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Shuang Xi ◽  
Tielin Shi ◽  
Liangliang Xu ◽  
Zirong Tang ◽  
Dan Liu ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Light Emitting Diode ◽  
Large Fraction ◽  
Incident Light ◽  
Single Crystal Silicon ◽  
Silicon Oxynitride ◽  
Metal Catalyst ◽  
Crystal Silicon ◽  
Optical Efficiency ◽  
Log Normal

Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Strain measurement by means of bend contour microscopy

1989 ◽  
Vol 47 ◽  
pp. 210-211
Author(s):  
Philip D. Hren
Keyword(s):  
Strain Measurement ◽  
Large Angle ◽  
Single Crystal Silicon ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Silicon Membrane ◽  
Crystal Silicon ◽  
Contour Pattern ◽  
Convergent Beam ◽  
Low Symmetry

The pattern of bend contours which appear in the TEM image of a bent or curled sample indicates the shape into which the specimen is bent. Several authors have characterized the shape of their bent foils by this method, most recently I. Bolotov, as well as G. Möllenstedt and O. Rang in the early 1950’s. However, the samples they considered were viewed at orientations away from a zone axis, or at zone axes of low symmetry, so that dynamical interactions between the bend contours did not occur. Their calculations were thus based on purely geometric arguments. In this paper bend contours are used to measure deflections of a single-crystal silicon membrane at the (111) zone axis, where there are strong dynamical effects. Features in the bend contour pattern are identified and associated with a particular angle of bending of the membrane by reference to large-angle convergent-beam electron diffraction (LACBED) patterns.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

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