Study on Dual-Plane Ball Polishing Method for Finishing Ceramics Ball

2013 ◽  
Vol 797 ◽  
pp. 444-449 ◽  
Author(s):  
Kai Ping Feng ◽  
Zhao Zhong Zhou ◽  
Bing Hai Lv ◽  
Ju Long Yuan

This paper represents a dual-plane polishing method for ceramics ball. Compared with traditional ball polishing method, its upper and lower plate are all flat and easy to use soft pad to polish, so it can largely reduce the surface mechanical damage and obtain high quality processing surface. This paper analyzes surface polishing trajectory by calculation and simulation to test the polishing trajectory uniformity. A mathematics model of polishing process is established to disintegrate the process of a balls movement. Experiment is operated in dual-plane planetary polishing machine. The result shows that perfect polishing surface and spherical error can be obtained under the proper process parameters, the surface roughness achieves 4nm and the spherical error can reach 0.217μm.

Author(s):  
Xiaolan Han ◽  
Zhanfeng Liu ◽  
Yazhou Feng

In the deep-hole boring process on pure niobium tube, there exist some problems including serious tool wear, tough chips, and poor surface quality. In order to bore high-quality deep holes on rolled niobium tube, the cutting tool structure and boring process parameters suitable for machining rolled niobium tube were designed and two experimental schemes were proposed. The results showed that the geometric parameters of the cutting tool and process parameters have important influences on the tool wear, chip morphologies, hole-axis deflection, and hole surface roughness. By adjusting the geometric parameters of the cutting tool and boring process parameters, reasonable geometric parameters of the cutting tool and boring process parameters were obtained.


2007 ◽  
Vol 359-360 ◽  
pp. 324-328
Author(s):  
Wei Li ◽  
Gang Xiang Hu ◽  
Xiao Dong Hu ◽  
Xiao Zhen Hu

This study compares the effectiveness of different polishing slurries for Double Sided Polishing process of Silicon wafer in the polished surface roughness and stock removal rate, discusses the mechanism of Double Sided Polishing for silicon wafer with different type slurries, also the influence of the pH value, temperature and concentration of the slurries are discussed in this paper. Furthermore, by the optimization of the process parameters, the ultra-smooth of polished surface of silicon wafer has been got with higher efficient.


2021 ◽  
Vol 3 (1) ◽  
pp. 23-30
Author(s):  
Gerry Patriadicka ◽  
Erwansyah Iskak ◽  
Juanda -

A good level of surface roughness as one of the benchmarks for turning the workpiece is said to be of high quality. As a cutting tool, lathe chisels need free angles and exhaust angles according to the desired specifications. This study aims to determine the effect of variations in the size of the tool angle and how much free angle and exhaust angle are best used on the surface roughness of St 41 steel. The study was conducted using a lathe brand Bemato series 44376 with process parameters consisting of a spindle speed of 280 m /min, the infeed depth is 0.8 mm, and the infeed speed is 0.040 mm/rev. The research method used is an experimental method and the results of the turning process are measured the level of surface roughness using a surface roughness tester. Based on the results of the specimen measurements, it is found that there are differences in surface roughness produced by variations in the free angle (α) and exhaust angle (β). As for the lowest roughness value of the whole specimen turning process is in the turning process with variations in angle 6° and angle sudut 10° with a surface roughness value (Ra) of 2,555 m.


2010 ◽  
Vol 44-47 ◽  
pp. 3031-3035
Author(s):  
Zhi Yu Zhao ◽  
Guang Tao Zhou ◽  
Su Zhi Zhang ◽  
Bi Bo Xia

Pulse electrochemical polishing is an important method to improve the surface quality of metal sheet. The reasonable control of process parameters is the key to obtain high-quality polishing. In this paper mechanism of pulse electrochemical polishing of stainless steel were studied using the stainless steel sheets of SUS201, SUS202, and SUS304. The influence of the current density, pulse frequency, duty cycle, and other factors on surface roughness were examined, and the optimal parameters was determined. The research results have directional meaning to the scale polishing of stainless steel-based in manufacturing enterprise.


2014 ◽  
Vol 548-549 ◽  
pp. 496-500
Author(s):  
S. Sonthimool ◽  
S. Prombanpong ◽  
Viboon Tangwarodomnukun

This paper aims at studying the effect of polishing parameters on surface roughness by using the cloth wheel polishing process. Stainless steel was used as a specimen in this study. The investigation firstly accounted for the comparison between two polishing compounds, and the best one was used to be applied in a set of experiment. The effect of spindle speed, current and polishing time on the surface roughness of stainless steel was examined, and the results showed that polishing time and current played the significant role in degree of roughness. The optimum condition under the range of parameters considered in this work was determined, whose surface roughness was about 0.0466 μm.


2007 ◽  
Vol 359-360 ◽  
pp. 305-308
Author(s):  
Xiao Cun Xu ◽  
Zhe Jun Yuan ◽  
Bing Lin

During the transferring process of the large die surfaces, there are extensive needs of die surface polishing. Since almost large die surfaces are free-form surfaces, currently, these are almost manually implemented. In order to overcome this barrier, base on design a floating polisher, this paper focuses on polishing rule of floating three polishing disks and the optimization of the associated polishing process parameters. In order to enhance the polisher performance, affecting factors of polishing process, including the rotation speed of polishing discs, normal acting force on polishing disc, loci of polishing disc movement, feeding rate of polishing disc, grit of abrasive particles, and inclined angle of the acting force on disc, are synchronized and analyzed versus roughness of polished surfaces. Then, using the parameter design plans and conducts tests regarding these affecting factors. Finally, the floating polishing process parameters are optimized based on the test results. These optimized results are used as operating guides for applications of the floating die polisher.


2007 ◽  
Vol 24-25 ◽  
pp. 77-82 ◽  
Author(s):  
Cong Rong Zhu ◽  
Ju Long Yuan ◽  
Bing Hai Lv ◽  
Zhao Zhong Zhou

This paper focuses on the application of Taguchi method for optimization of SUS440 stainless steel polishing process parameters to obtain the best finish. An optimization experiment for polishing stainless steel with SiO2 was designed by Taguchi method. Surface roughness Ra is considered as criteria for optimization. Influence of parameters involving load, speed, and slurry concentration for a given workmaterial with given abrasive (material and size) are discussed, and the optimum polishing conditions are figured out. Compared with single parameter experimental results, it illustrates that the experiment design based on Taguchi method can successfully applied to determine the optimum processing conditions for SUS440 stainless steel polishing process.


2014 ◽  
Vol 602-603 ◽  
pp. 511-514
Author(s):  
Wan Xiu Hai ◽  
Jun Ling Zeng ◽  
Jun Hu Meng ◽  
Jin Jun Lu

The surface polishing of Ti3SiC2 disk in fluids (water, ethanol, propanol, glycol, and glycerol) is conducted on a Buehler grinder/polisher and evaluated using surface roughness. Using Buehler automatic grinder/polisher, the Ti3SiC2 disks are grinded and polished in the as-mentioned lubricants by grinding disk of diamond with sizes of 45 μm to 3 μm. The surface roughnesses of Ti3SiC2 disks at each stage are measured by 3D surface profiler. The results show that the lowest surface roughness (Ra) of Ti3SiC2 disk obtained by mechanical polishing is 0.04 μm. The optimum polishing process of Ti3SiC2 disk is as follows: using water as lubricant, at a load of 5 N, for steps 1 to 4, the Ti3SiC2 and grinding disk rotates comparatively and the sizes of diamond particles on the abrasive disk are 45, 15, 9, and 3 μm, respectively. For step 5, the abrasive disk is woven cloth with no diamond particles. The duration of each step is 5 min. Using the same polishing process, the surface roughness of Ti3SiC2 disk by direct hot pressing is lower than that by in situ reactive hot pressing. Using the same polishing process but different lubricants, the surface roughness of the Ti3SiC2 disks increases in the order of water, ethanol, propanol, glycol, and glycerol. In water, the surface roughness of Ti3SiC2 disk decreases with the increasing quantity of water and polishing duration.


Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 544
Author(s):  
Tianchen Zhao ◽  
Qianfa Deng ◽  
Cheng Zhang ◽  
Kaiping Feng ◽  
Zhaozhong Zhou ◽  
...  

Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer.


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