Properties of SiO2CuOx Films for Nitrogen Dioxide Detection

2013 ◽  
Vol 834-836 ◽  
pp. 112-116 ◽  
Author(s):  
Tatiana Myasoedova ◽  
G.E. Yalovega ◽  
V.V. Petrov ◽  
O.V. Zabluda ◽  
V.A. Shmatko ◽  
...  
Keyword(s):  
Thin Films ◽  
Nitrogen Dioxide ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Technique ◽  
Operating Temperatures

SiOxCuOythin films were prepared by the deposition on to the Si/SiO2substrates from the alcoholic solutions employing the sol-gel technique. The various analytic techniques were applied to characterize structure and properties of the films under study . The both X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies showed the presence CuO as well as CuO2phases and formation of a dual-oxide CuSiO3with the average crystallites sizes of 35-50 nm. The conductance of the films was rather sensitive to the presence of 1-20 ppm NO2concentration at the operating temperatures in the range of 20–200◦C.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

scholarly journals Synthesis & characterization of nanostructure VO2 thin film

2021 ◽  
Vol 2070 (1) ◽  
pp. 012098
Author(s):  
P K Ojha ◽  
S K Mishra
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vanadium Dioxide ◽  
Sol Gel ◽  
Cost Effective ◽  
Metallic Phase ◽  
Strongly Correlated ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Abstract Vanadium dioxides are strongly correlated systems which undergo an insulator-metal transition (IMT) from a low-temperature semiconducting phase to a high-temperature metallic phase. Among them, Vanadium dioxide (VO2) undergoes IMT close to room temperature, accompanied by a structural transition resulting change of several orders of magnitude in the electrical and optical properties. Here, we present the synthesis of VO2 by sol-gel process which employs cost-effective precursors to synthesize pure phase of VO2 thin films. The synthesized thin films were characterized using an X-ray diffraction (XRD) to confirm phase purity and high resolution scanning electron microscope (HR-SEM) to study the crystallite and particle size for the synthesized films. The film’s surface was analyzed by X-ray photoelectron spectroscopy (XPS) to determine the valence state and chemical composition of vanadium dioxide.

scholarly journals Synthesis and Characterizations of LaMnO3 Perovskite Powders Using Sol-Gel Method 

2021 ◽  
Author(s):  
Deniz ÇOBAN ÖZKAN ◽  
Ahmet Türk ◽  
Erdal Celik
Keyword(s):  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dye Sensitized Solar Cells ◽  
Ammonium Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dye Sensitized ◽  
Gel Technique ◽  
Sensitized Solar Cells

Abstract The present research demonstrates the synthesis and characterization of LaMnO3 perovskite powders using the sol-gel technique for dye-sensitive solar cell applications. With this respect, transparent solutions were prepared from La and Mn based precursors, distilled water and citric acid monohydrate. Ammonium hydroxide was incorporated into the La-Mn solution in order to neutralize/precipitate at 24oC for 1 hour in the air. The solution was allowed to evaporate on a hot plate device at 90 °C in the air. The obtained solutions were dried at 90 oC for 24 hours to form a xerogel structure, dried at 200 oC for 2 hours and consequently annealed at 500 and 850 oC for 2 hours in the air. Thermal, structural, microstructural, optical and magnetic properties of the powders were characterized through differential thermal analysis-thermogravimetry (DTA-TG), Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscopy (SEM), Malvern zeta sizer (PSD), UV-vis spectrometer and vibrating sample magnetometer (VSM). The obtained results indicate promise, especially the low band range, that LaMnO3 powders can be used in dye-sensitized solar cells and can positively affect performance and efficiency.

Characterization of Sol-Gel Derived (Pb,Ba)(Zr,Ti,Nb)O3 Thin Films for Optical Waveguide Development

1994 ◽  
Vol 343 ◽  
Author(s):  
P. F. Baude ◽  
J. S. Wright ◽  
C. Ye ◽  
L. F. Francis ◽  
D. L. Polla
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Solution Preparation ◽  
Transmission Measurements ◽  
Gel Technique

ABSTRACT(PbBa)(ZrTiNb)03 thin films and powders have been prepared using the sol-gel technique. Solutions were synthesized in 2-methoxyethanol based upon our previous PZT solution preparation. Three different approaches were used for incorporating barium into PZT alkoxide solutions. Thermal analysis and x-ray diffraction results indicated that barium methoxypropoxide gave the best results. PBZTN (71% Pb and 71% Zr) was deposited onto sapphire substrates as well as oxidized silicon substrates. Optical transmission measurements showed greater than 80% transmission for wavelengths longer than 400 nm. Films with thickness of 3000 Å on sapphire exhibited a refractive index of 2.19 at λ=633 nm.

Poly(vanadium–molybdenum acid) xerogel thin films fabricated by the sol-gel process and their humidity-sensing properties

2000 ◽  
Vol 15 (12) ◽  
pp. 2653-2657 ◽  
Author(s):  
Maosong Tong ◽  
Guorui Dai ◽  
Yuanda Wu ◽  
Xiuli He ◽  
Wei Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermogravimetric Analysis ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Humidity Sensing ◽  
X Ray ◽  
Sensing Properties ◽  
Sol Gel Process ◽  
Humidity Sensing Properties

Thermogravimetric analysis, x-ray photoelectron spectroscopy, and x-ray diffraction results and the humidity sensing properties of poly(vanadium–molybdenum acid) H2V9.5Mo2.5O32.0 · 8.8H2O xerogel thin films, which were fabricated by the sol-gel process, are described in this paper. The conductance and the capacitance of the thin films strongly depend on the relative humidity. Different electrodes have different influences on the humidity-sensing properties of the thin films.

Preparation of Perovskite Conductive LaNiO3 Films by Sol-Gel Techniques

2006 ◽  
Vol 933 ◽  
Author(s):  
Pei-Ying Lai ◽  
Jen-Sue Chen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Raw Materials ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Metallic Thin Films ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Metallic Oxide ◽  
X Ray

ABSTRACTMetallic thin films of LaNiO3 (LNO) have been prepared by the sol-gel method using lanthanum nitrate [La(NO3)3·6H2O] and nickel acetate [Ni(CH3COO)2·4H2O] as raw materials. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrical measurements were used to characterize the multilayer LNO thin films. The perovskite phase appears after annealing at temperatures above 600 °C. LNO thin films are n-type metallic oxide. The lowest resistivity is 621 °Ω-cm after annealing at 600 °C, and the carrier concentration is 6.09×1022/cm3.

EFFECTS OF La DOPING ON FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS

2007 ◽  
Vol 14 (02) ◽  
pp. 277-281
Author(s):  
YANXIA DING ◽  
GUANGDA HU ◽  
SUHUA FAN
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
La Doping ◽  
Gel Technique ◽  
A Site

La modified CBTi ( CLBTi ) thin films were prepared on Pt/Ti/SiO 2/ Si (100) substrates by a sol–gel technique. X-ray diffraction analysis showed that single phase of CLBTi thin films were obtained. Their crystallization and hysteresis behavior were strongly dependent on the La contents. An increase of 2Pr as well as a decrease of 2Ec with the increase of La concentration were observed. The leakage properties of CBTi thin films were found to be improved by the La doping. The results were discussed with respect to the effects of La 3+ substitution at perovskite A-site.

Raman spectroscopy and x-ray diffraction study of PbTiO3 thin films prepared by sol–gel technique

1999 ◽  
Vol 85 (4) ◽  
pp. 2146-2150 ◽  
Author(s):  
Ai-Dong Li ◽  
Di Wu ◽  
Chuan-Zhen Ge ◽  
Peng Lü ◽  
Wen-Hui Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Diffraction Study ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Technique

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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