Optimization of UHV-CVD Thin Films for Gate Dielectric Applications

2006 ◽  
Vol 45 ◽  
pp. 1351-1354
Author(s):  
Bridget R. Rogers ◽  
Zhe Song ◽  
Robert D. Geil ◽  
Robert A. Weller
Keyword(s):  
Silicon Oxide ◽  
Gate Dielectric ◽  
High Surface ◽  
Ex Situ ◽  
Oxide Surfaces ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Initial Stage ◽  
Different Temperatures

In-situ and ex-situ spectroscopic ellipsometry (SE), atomic force microscopy (AFM), transmission electron microscopy (TEM), and time of flight medium energy backscattering (ToF MEBS), are used to investigate the properties of 30 and 60 Å ZrO2 films deposited at different temperatures on hydrogen terminated silicon (H-Si) and native silicon oxide surfaces. Results show that the initial-stage deposition of ZrO2 on H-Si and native silicon oxide surfaces are different. A 3-dimesional (3D) type nucleation process of ZrO2 on H-Si leads to high surface roughness films, while layer-by-layer deposition on native silicon oxide surfaces leads to smooth, uniform ZrO2 films. An interfacial layer, between the substrate and the metal oxide, is formed through two independent mechanisms: reaction between the starting surfaces and ZTB or its decomposition intermediates, and diffusion of reactive oxidants through the forming ZrO2 interfacial stack layer to react with the substrate.

scholarly journals Development of Quantum Dot (QD) Based Color Converters for Multicolor Display

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1089
Author(s):  
Muhammad T. Sajjad ◽  
Ashu K. Bansal ◽  
Francesco Antolini ◽  
Eduard Preis ◽  
Lenuta Stroea ◽  
...  
Keyword(s):  
Polymer Matrix ◽  
Cost Effective ◽  
Final Size ◽  
Force Microscopy ◽  
Morphological Studies ◽  
Color Displays ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Color Conversion ◽  
Temperature Time

Many displays involve the use of color conversion layers. QDs are attractive candidates as color converters because of their easy processability, tuneable optical properties, high photoluminescence quantum yield, and good stability. Here, we show that emissive QDs with narrow emission range can be made in-situ in a polymer matrix, with properties useful for color conversion. This was achieved by blending the blue-emitting pyridine based polymer with a cadmium selenide precursor and baking their films at different temperatures. To achieve efficient color conversion, blend ratio and baking temperature/time were varied. We found that thermal decomposition of the precursor leads to highly emissive QDs whose final size and emission can be controlled using baking temperature/time. The formation of the QDs inside the polymer matrix was confirmed through morphological studies using atomic force microscopy (AFM) and transmission electron microscopy (TEM). Hence, our approach provides a cost-effective route to making highly emissive color converters for multi-color displays.

Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol 98 (5) ◽  
pp. 365-375
Author(s):  
Andrea Quintero ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Initial Electrodeposition Behavior of Amorphous Ni-P Alloys

2010 ◽  
Vol 154-155 ◽  
pp. 535-539
Author(s):  
Xue Tao Yuan ◽  
Dong Bai Sun ◽  
Zhi Qiang Hua ◽  
Lei Wang
Keyword(s):  
Amorphous Alloy ◽  
Carbon Film ◽  
Three Dimensional ◽  
Amorphous State ◽  
Epitaxial Relationship ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Initial Stage ◽  
Crystal Substrate ◽  
Structure Of Deposits

The growth morphology and structure of deposits during the initial stages of amorphous Ni-P electrodeposition was studied using atomic force microscopy (AFM), X-ray diffraction (XRD) and transmission electron microscope (TEM). Combined electrochemical and surface analytical measurements showed that the electrocrystallization process follows a three-dimensional instantaneous nucleation and growth mechanism. The structure of the Ni-P deposits progressively changed from polycrystalline to amorphous state with increasing electroplating time. Additional electrodeposition was carried out on amorphous carbon film at potential -650mV (SCE) for 5s in the same bath for plating Ni-P alloy. It was confirmed that the formation of crystal Ni at initial stage of electroplating Ni-P amorphous alloy was not caused by the epitaxial relationship between the crystal Ni and the crystal substrate and there was a nucleation process in the electrodeposition of amorphous alloy.

scholarly journals Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD

2007 ◽  
Vol 2 (2) ◽  
pp. 81-84
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
N. C. Frateschi
Keyword(s):  
Quantum Dots ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Nucleation Parameters ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Mean Size ◽  
Germanium Quantum Dots

Germanium quantum dots (Ge-QD) were grown by Low Pressure Chemical Vapor Deposition (LPCVD) on Si nucleus previously grown on 3 nm thick SiO2 ultra thin film. Samples were analyzed by atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). We report the analysis of the influence of the nucleation parameters on size and spatial distribution of Ge-QD. AFM images show a Ge-QD density of around 3.6x1010 cm-2, with an 11 nm mean size and 2.9 nm height. Finally, HRTEM investigation shows that the Ge-QD have a crystalline structure, i.e., they are nanocrystals.

Assembly and Optical Properties of Metal Nanoparticles

2019 ◽  
Vol 294 ◽  
pp. 3-10
Author(s):  
E.A. Dawi ◽  
A. Abdelkader
Keyword(s):  
Gold Nanoparticles ◽  
Optical Properties ◽  
Self Assembly ◽  
Silicon Oxide ◽  
Ex Situ ◽  
Visible Range ◽  
Plasmonic Nanostructures ◽  
Electromagnetic Spectrum ◽  
Force Microscopy ◽  
Atomic Force

In this paper, the deposition and optical properties of charge-stabilized gold nanoparticles on silicon oxide substrates is studied, which have been derivatised with (aminopropyl) triemethoxysilane. Monodispersed charged-stabilized colloidal gold nanoparticles with diameters between 20-150 nm were prepared and their self-assembly and optical properties on silica substrates is studied. Atomic force microscopy (AFM) is employed to investigate the nanoparticle monolayers ex situ. Analysis of AFM images provide evidence that the formation of the colloidal nanoparticle monolayers is governed by random sequential adsorption. The results indicate that the ionic strength of the suspension influences the spatial distribution of the nanoparticles. For all sizes of the Au nanoparticles tested, optical simulations of extinction coefficients made by finite-difference time domain (FDTD) indicate a resonance peak in the range of 510-600 nm wavelength of the visible range of the electromagnetic spectrum. The results indicate a simple and inexpensive approach of assembly of plasmonic nanostructures that can find applications in metamaterials and light waveguides.

Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

2001 ◽  
Vol 670 ◽  
Author(s):  
Hyungsuk Jung ◽  
Hyundoek Yang ◽  
Kiju Im ◽  
Hyunsang Hwang
Keyword(s):  
Interfacial Layer ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Tem Analysis ◽  
Mos Capacitors ◽  
Zirconium Silicate ◽  
Transmission Electron ◽  
High K ◽  
Device Applications

ABSTRACTThis letter describes a unique process for the preparation of high quality tantalum oxynitride (TaOxNy) with zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional native silicon oxide and oxynitride as an interfacial layer, tantalum oxynitride (TaOxNy) MOS capacitors using zirconium silicate (ZrSixOy) as an interfacial layer exhibit lower leakage current levels at the same equivalent oxide thickness. We were able to confirm TaOxNy/ZrSixOy stack structure by auger electron spectroscopy (AES) and transmission electron microscope (TEM) analysis. The estimated dielectric constant of TaOxNy and ZrSixOywere approximately 67 and 7, respectively. The zirconium silicate is a promising interfacial layer for future high-k gate dielectric applications.

Research on the atomic force microscopy-based fabrication of nanochannels on silicon oxide surfaces

2010 ◽  
Vol 55 (30) ◽  
pp. 3466-3471 ◽  
Author(s):  
ZhiQian Wang ◽  
NianDong Jiao ◽  
Steve Tung ◽  
ZaiLi Dong
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Oxide ◽  
Oxide Surfaces ◽  
Force Microscopy ◽  
Atomic Force

Properties of Metal / Polyphenylquinoxaline Interfaces

1994 ◽  
Vol 337 ◽  
Author(s):  
L. Bellard ◽  
J.M. Themlin ◽  
F. Palmino ◽  
A. Cros
Keyword(s):  
Metal Layer ◽  
High Vacuum ◽  
Polymer Surface ◽  
Pure Metal ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTWe have investigated the microscopic properties of copper and chromium layers deposited on polyphenylquinoxaline (PPQ). PPQ is a thermostable polymer used for multichip module applications. The metal is deposited under ultra-high vacuum conditions and analysed in-situ by X-ray photoemission (XPS) and atomic force microscopy (ex situ). Copper does not react significantly with the PPQ and tends to diffuse into the polymer matrix upon annealing. On the contrary, chromium strongly reacts with the polymer surface at room temperature. With increasing metal coverage, chromium grows in a layer-by-layer mode and the reacted interface is progressively burried under the pure metal layer.

scholarly journals Fabrication of hybrid graphene oxide/polyelectrolyte capsules by means of layer-by-layer assembly on erythrocyte cell templates

2015 ◽  
Vol 6 ◽  
pp. 2310-2318 ◽  
Author(s):  
Joseba Irigoyen ◽  
Nikolaos Politakos ◽  
Eleftheria Diamanti ◽  
Elena Rojas ◽  
Marco Marradi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Technique ◽  
Polyallylamine Hydrochloride ◽  
Layer By Layer Technique ◽  
Layer Assembly ◽  
Shape And Size

A novel and facile method was developed to produce hybrid graphene oxide (GO)–polyelectrolyte (PE) capsules using erythrocyte cells as templates. The capsules are easily produced through the layer-by-layer technique using alternating polyelectrolyte layers and GO sheets. The amount of GO and therefore its coverage in the resulting capsules can be tuned by adjusting the concentration of the GO dispersion during the assembly. The capsules retain the approximate shape and size of the erythrocyte template after the latter is totally removed by oxidation with NaOCl in water. The PE/GO capsules maintain their integrity and can be placed or located on other surfaces such as in a device. When the capsules are dried in air, they collapse to form a film that is approximately twice the thickness of the capsule membrane. AFM images in the present study suggest a film thickness of approx. 30 nm for the capsules in the collapsed state implying a thickness of approx. 15 nm for the layers in the collapsed capsule membrane. The polyelectrolytes used in the present study were polyallylamine hydrochloride (PAH) and polystyrenesulfonate sodium salt (PSS). Capsules where characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), dynamic light scattering (DLS) and Raman microscopy, the constituent layers by zeta potential and GO by TEM, XRD, and Raman and FTIR spectroscopies.

Sign in / Sign up

Export Citation Format

Share Document