scholarly journals Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6629
Author(s):  
Wang Ke ◽  
Xiaoting Yang ◽  
Tongyu Liu
Keyword(s):  
Data Storage ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Memory Device ◽  
Resistance Switching ◽  
Memory Devices ◽  
Switching Effect ◽  
Short Period ◽  
Non Volatile Memory ◽  
Order Of Magnitude

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI2 perovskite film is uniform and dense, and the Ag/CsPbBrI2/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI2/ITO memory devices based on CsPbBrI2 perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

Electrically Re-Writable Non-Volatile Memory Device - Using a Blend of Sea Salt and Polymer

2008 ◽  
Vol 54 ◽  
pp. 486-490 ◽  
Author(s):  
Iulia Salaoru ◽  
Shashi Paul
Keyword(s):  
Polyvinyl Acetate ◽  
Organic Molecules ◽  
Memory Device ◽  
Sea Salt ◽  
Nano Particles ◽  
Memory Devices ◽  
Current Voltage ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Charging Mechanism

Intensive research is currently underway to exploit the highly interesting properties of nano-sized particles and organic molecules for optical, electronic and other applications. Recently, it has been shown that nano-sized particles and small organic molecules embedded in polymer matrices can be used to realise memory devices. Such memory devices are simple to fabricate via the spin-on technique. This work presents an attempt to use sea salt, embedded in polyvinyl acetate, in the making of the memory devices. A polymer blend of polyvinyl acetate and sodium chloride (NaCl) was prepared in methanol and spin coated onto a glass substrate marked with thin Al tracks and a top contact was evaporated onto the blend after drying - this resulted in a metal-organic-metal (MOM) structure. The current-voltage (I-V) behaviour of MOM devices shows that the devices can be switched from a high conductivity state to a low conductivity state, by applying an external electric field - this property can be exploited to store data bits. The possible charging mechanism, based on the electric dipole formation, is presented in this work. Polymer blends of polyvinyl acetate with nano-particles of BaTiO3 are also investigated to further our understanding of charging mechanism(s).

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

Graphitic carbon nitride nanosheets for solution processed non-volatile memory devices

2019 ◽  
Vol 7 (33) ◽  
pp. 10203-10210 ◽  
Author(s):  
Ruopeng Wang ◽  
Huilin Li ◽  
Luhong Zhang ◽  
Yu-Jia Zeng ◽  
Ziyu Lv ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Memory Device ◽  
Graphitic Carbon Nitride ◽  
Memory Devices ◽  
Characteristic P ◽  
Switching Characteristic ◽  
Solution Processed ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Carbon Nitride Nanosheets

A memory device is demonstrated based on g-C3N4 nanosheets with a non-volatile behavior and a bipolar switching characteristic.

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

scholarly journals Synthesis and Characterization of Multiferroic BiFeO3 for Data Storage

2020 ◽  
Author(s):  
Kuldeep Chand Verma
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Lone Pair ◽  
Memory Devices ◽  
Spintronic Devices ◽  
Antiferromagnetic Ordering ◽  
Multiferroic Bifeo3 ◽  
Non Volatile Memory ◽  
New Generation ◽  
Lone Pair Electrons

Multiferroic BiFeO3 deals with spintronic devices involved spin-charge processes and applicable in new non-volatile memory devices to store information for computing performance and the magnetic random access memories storage. Since multiferroic leads to the new generation memory devices for which the data can be written electrically and read magnetically. The main advantage of present study of multiferroic BiFeO3 is that to observe magnetoelectric effects at room temperature. The nanostructural growth (for both size and shape) of BiFeO3 may depend on the selection of appropriate synthesis route, reaction conditions and heating processes. In pure BiFeO3, the ferroelectricity is induced by 6s2 lone-pair electrons of Bi3+ ions and the G-type antiferromagnetic ordering resulting from Fe3+ spins order of cycloidal (62-64 nm wavelength) occurred below Neel temperature, TN = 640 K. The multiferroicity of BiFeO3 is disappeared due to factors such as impurity phases, leakage current and low value of magnetization. Therefore, to overcome such factors to get multiferroic enhancement in BiFeO3, there are different possible ways like changes dopant ions and their concentrations, BiFeO3 composites as well as thin films especially multilayers.

The role of excess Pb and PbO overpressure on the microstructural development in polycrystalline PZT thin films

1994 ◽  
Vol 52 ◽  
pp. 582-583
Author(s):  
M. J. Lefevre ◽  
D. B. Dimos ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Optical Data Storage ◽  
Optical Data ◽  
Microstructural Development

Ferroelectric thin films have recently received considerable attention because of their potential in a range of device applications including both volatile and non-volatile memories, optical data storage, and other electrooptic applications (e.g. waveguides, switches, and modulators). The Pb-based perovskites, such as Pb(Zr,Ti)O3, have many properties that make them attractive for such applications because of their high switchable remanant polarization. In addition, many applications require integration of the ferroelectric with semiconductors. In our work we are studying the crystallization sequence of PZT 40/60 (PbZr0.40Ti0.60O3) grown on platinized silicon substrates, with an overall structure given as PZT/Pt/Ti/SiO2Si. The Ti and Pt are sequentially evaporated onto the oxidized Si substrate. Alkoxide-derived films are spun onto these substrates to form a dry amorphous gel2. The crystallization of the sol-gel film proceeds upon heating to temperatures in the range of 400-700°C. Lead volatility is one of the critical issues in the crystallization of Pb-based perovskite thin films. We have carried out a systematic study on the role of a lead atmosphere in crystallization for PZT (40/60). When heat treated the film forms a transitory pyrochlore phase at intermediate temperatures before transforming to the perovskite phase. This non-ferroelectric pyrochlore phase may stabilize if lead stoichiometry is not maintained, leading to poor optical and ferroelectric properties in the thin films.

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Nanoscale ◽  
2019 ◽  
Vol 11 (39) ◽  
pp. 18159-18168 ◽  
Author(s):  
Saurabh Srivastava ◽  
Joseph Palathinkal Thomas ◽  
Kam Tong Leung
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Data Retention ◽  
Pt Electrodes ◽  
Non Volatile Memory ◽  
Volatile Memory

A TiOx/TaOx heterojunction sandwiched between a pair of Pt electrodes provides an electroforming-free non-volatile memory device with a remarkably low programming voltage (+0.5 V), high endurance (104 cycles) and data retention (105 s).

Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

2008 ◽  
Vol 54 ◽  
pp. 470-473 ◽  
Author(s):  
Hun Jun Ha ◽  
J.M. Lee ◽  
M. Kim ◽  
O.H. Kim
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Electrode Materials ◽  
Memory Device ◽  
Current Level ◽  
Switching Behavior ◽  
Memory Devices ◽  
Carrier Injection ◽  
Bipolar Switching ◽  
Non Volatile Memory

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

scholarly journals Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 518 ◽  
Author(s):  
Lei Li
Keyword(s):  
Graphene Oxide ◽  
Charge Transport ◽  
Data Storage ◽  
Energy Band ◽  
Memory Device ◽  
Nanocomposite Films ◽  
Memory Devices ◽  
The Novel ◽  
Trilayer Structure ◽  
Novel Design

A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.

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