Effect of Annealing Temperature of Magnesium Doped Zinc Oxide Nanorods Growth on Silicon Substrate
2013 ◽
Vol 26
◽
pp. 33-38
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Keyword(s):
Magnesium (Mg)-doped zinc oxides (ZnO) have been prepared on a silicon substrate by using the solution-immersion method. The nanorods films were annealed at different temperature 0°C, 250°C, 500°C respectively for 1 hour. The XRD diffraction indicated that the Mg-doped ZnO nanorods have good crystallinity with a hexagonal wurzite structure preferentially oriented along the (002) direction. PL spectroscopy at room temperature shows strong UV peaks appearing at 383 nm when annealed at 250°C. The intensity of broad emission peaks increases with increasing annealing temperature to 500°C which is possibility attributed to intrinsic defects.
Zinc Oxide Nanorods Characteristics Prepared by Sol-Gel Immersion Method Immersed at Different Times
2013 ◽
Vol 667
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pp. 375-379
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2019 ◽
Vol 45
(3)
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pp. 3230-3238
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Keyword(s):
2011 ◽
Vol 312-315
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pp. 104-109
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Keyword(s):
2008 ◽
Vol 8
(11)
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pp. 5854-5857
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2011 ◽
Vol 10
(04n05)
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pp. 845-849
Keyword(s):
2010 ◽
Vol 10
(10)
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pp. 6419-6423
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Keyword(s):
2014 ◽
Vol 5
◽
pp. 173-179
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