Real-Time and Full-Field Deflection Measurement of Thin Films Electroplated on the Single Crystal Silicon Wafers

2006 ◽  
Vol 306-308 ◽  
pp. 1289-1294
Author(s):  
Xi De Li ◽  
Cheng Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Single Crystal ◽  
Sample Size ◽  
Real Time ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Full Field ◽  
Young’S Moduli

A special speckle microinterferometer has been developed to test the mechanical properties of thin films electroplated on the single crystal silicon wafer. A piezo-actuated micro-loading unit is synchronized with the microinterfermeter to measure thin film deflection in bending with an accuracy of sub-micrometers. All of the film specimens were microfabricated to be the type of microbridge samples. They are made of Cu and NiFe, the sizes from 1102.9µm to 213.7µm long, 491.0µm to 9.7µm wide. The corresponding thicknesses are 9.4µm and 7.6µm, respectively. Deflections of the microbradge samples can be measured full-field and real-time by using the microinterferometer and no patterning or marking of the specimen surface is needed. The loading force is directly measured using a miniature load cell. The Young’s moduli are calculated for both material and sample size from the load-deflection curves. Test techniques, procedures and factors which affect on the deflection measurements are briefly presented along with detailed analyzes of the results.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

Measurement of Stress and Strain of Single-Crystal-Silicon Thin Film during On-Chip Tensile Test

1999 ◽  
Vol 119 (2) ◽  
pp. 67-72 ◽  
Author(s):  
Taeko Ando ◽  
Tetsuo Yoshioka ◽  
Mitsuhiro Shikida ◽  
Kazuo Sato ◽  
Tatsuo Kawabata
Keyword(s):  
Thin Film ◽  
Tensile Test ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Stress And Strain ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
On Chip

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Mechanical deflection of cantilever microbeams: A new technique for testing the mechanical properties of thin films

1988 ◽  
Vol 3 (5) ◽  
pp. 931-942 ◽  
Author(s):  
T. P. Weihs ◽  
S. Hong ◽  
J. C. Bravman ◽  
W. D. Nix
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Single Layer ◽  
Beam Theory ◽  
New Technique ◽  
Young’S Moduli ◽  
Silicon Micromachining ◽  
A New Technique

The mechanical deflection of cantilever microbeams is presented as a new technique for testing the mechanical properties of thin films. Single-layer microbeams of Au and SiO2 have been fabricated using conventional silicon micromachining techniques. Typical thickness, width, and length dimensions of the beams are 1.0,20, and 30 μm, respectively. The beams are mechanically deflected by a Nanoindenter, a submicron indentation instrument that continuously monitors load and deflection. Using simple beam theory and the load-deflection data, the Young's moduli and the yield strengths of thin-film materials that comprise the beams are determined. The measured mechanical properties are compared to those obtained by indenting similar thin films supported by their substrate.

High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers

2006 ◽  
Vol 100 (1) ◽  
pp. 013708 ◽  
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Michelle M. Roberts ◽  
Donald E. Savage ◽  
Max G. Lagally
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Flexible Polymers ◽  
Silicon Thin Film ◽  
Crystal Silicon
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