High Frequency Dielectric Mapping Using Un-Contact Probe for Dielectric Materials

2006 ◽  
Vol 320 ◽  
pp. 189-192
Author(s):  
Hirofumi Kakemoto ◽  
Song Min Nam ◽  
Satoshi Wada ◽  
Takaaki Tsurumi
Keyword(s):  
Dielectric Permittivity ◽  
Single Crystals ◽  
High Frequency ◽  
Room Temperature ◽  
Dielectric Materials ◽  
Minimum Point ◽  
Electromagnetic Simulation ◽  
Contact Probe ◽  
The Difference ◽  
Reflection Intensity

The microwave reflection intensity was measured at room temperature for Cu-plate, Al2O3 and SrTiO3 single crystals using a un-contact probe as a function of distance between sample and probe. The difference of reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was observed in the region where the distance of 0.2mm between sample and probe, and it was caused from dielectric permittivities of samples. The reflection coefficient of sample was estimated in comparison with results of electromagnetic simulation using finite differential time domain method. The reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was transformed to dielectric permittivity at reflection intensity minimum point. The dielectric permittivity mapping was also examined at reflection intensity minimum point.

Dielectric Permittivity Mapping up to 9GHz Region with Non-contact Microwave Probe for Ferroelectric Device

2006 ◽  
Vol 966 ◽  
Author(s):  
Hirofumi Kakemoto ◽  
Jianyong Li ◽  
Takakiyo Harigai ◽  
Song-Min Nam ◽  
Satoshi Wada ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Cross Sections ◽  
High Frequency ◽  
Room Temperature ◽  
Measured Data ◽  
Data Process ◽  
Direct Observations ◽  
Ceramic Capacitor ◽  
Microwave Probe ◽  
Reflection Intensity

ABSTRACTDirect observations for high frequency microscopic dielectric distributions in cross sections of a multi-layer ceramic capacitor were carried out using non-contact type microwave probe. The measured data were imaged from the raw data and rounding data process. Using microwave reflection intensity mappings from cross sections of multi-layer ceramic capacitor, the dielectric permittivity distribution in micro-region of a multi-layer ceramic capacitor was measured at room temperature. The spatial resolution was experimentally estimated to be about 10 μm from mappings of the dielectric and inner electrode layers in a multi-layer ceramic capacitor.

High Frequency Dielectric Permittivity Measurement of Dielectric Layer of MLCC Using Non-Contact Probe

2007 ◽  
Vol 350 ◽  
pp. 243-246
Author(s):  
Hirofumi Kakemoto ◽  
Jianyong Li ◽  
Takakiyo Harigai ◽  
Song Min Nam ◽  
Satoshi Wada ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Cross Sections ◽  
High Frequency ◽  
Permittivity Measurement ◽  
Data Process ◽  
Direct Observations ◽  
Contact Probe ◽  
Ceramic Capacitor ◽  
Microwave Probe ◽  
Reflection Intensity

Direct observations for high frequency microscopic dielectric distributions in cross sections of a multi-layer ceramic capacitor were carried out using non-contact type microwave probe. The measured data were imaged from the raw data and rounding data process. Using microwave reflection intensity mappings from cross sections of multi-layer ceramic capacitor, the dielectric permittivity distribution in micro-region of a multi-layer ceramic capacitor was measured at room temperature. The spatial resolution was experimentally estimated to be about 10 μm from mappings of the dielectric and inner electrode layers in a multi-layer ceramic capacitor.

LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS

2009 ◽  
Vol 23 (17) ◽  
pp. 3649-3654 ◽  
Author(s):  
MOHAN V. JACOB
Keyword(s):  
High Frequency ◽  
Room Temperature ◽  
Low Cost ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Transmission Losses ◽  
Low Loss ◽  
Microwave Characterization ◽  
Materials Used ◽  
Low Temperature Electronics

The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.

High-Frequency Dielectric Measurement Using Non-contact Probe for Dielectric Materials

2006 ◽  
Vol 45 (4B) ◽  
pp. 3002-3006 ◽  
Author(s):  
Hirofumi Kakemoto ◽  
Song-Min Nam ◽  
Satoshi Wada ◽  
Takaaki Tsurumi
Keyword(s):  
High Frequency ◽  
Dielectric Materials ◽  
Dielectric Measurement ◽  
Contact Probe

scholarly journals The Internal Friction of Single Crystals, Bicrystals and Polycrystals of Pure Magnesium

2015 ◽  
Vol 60 (1) ◽  
pp. 371-375 ◽  
Author(s):  
W.B. Jiang ◽  
Q.P. Kong ◽  
L.B. Magalas ◽  
Q.F. Fang
Keyword(s):  
Activation Energy ◽  
Internal Friction ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Room Temperature ◽  
Internal Friction Peak ◽  
Self Diffusion ◽  
Boundary Relaxation ◽  
The Difference

Abstract The internal friction of magnesium single crystals, bicrystals and polycrystals has been studied between room temperature and 450°C. There is no internal friction peak in the single crystals, but a prominent relaxation peak appears at around 160°C in polycrystals. The activation energy of the peak is 1.0 eV, which is consistent with the grain boundary self-diffusion energy of Mg. Therefore, the peak in polycrystals can be attributed to grain boundary relaxation. For the three studied bicrystals, the grain boundary peak temperatures and activation energies are higher than that of polycrystals, while the peak heights are much lower. The difference between the internal friction peaks in bicrystals and polycrystals is possibly caused by the difference in the concentrations of segregated impurities in grain boundaries.

Analysis of C-Face 4H-SiC MOS Capacitors with ZrO2 Gate Dielectric

2014 ◽  
Vol 778-780 ◽  
pp. 635-638 ◽  
Author(s):  
Le Shan Chan ◽  
Yu Hao Chang ◽  
Kung Yen Lee
Keyword(s):  
High Frequency ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Leakage Currents ◽  
Mos Capacitors ◽  
Thermal Annealing Process ◽  
The Difference

ZrO2 films were deposited on C-face 4H-SiC substrates by using an RF sputter at a temperature of 200°C. Then, ZrO2 films were treated with RTA (rapid thermal annealing) process in Argon (Ar) ambient at 600°C, 700°C and 800°C for 4 minutes, respectively. The samples with RTA process show the lower leakage currents. As the measure temperature increases from room temperature (RT) to 150°C, the dielectric breakdown voltage reduces from 3 V to 1 V. The difference between quasi C-V characteristics and high frequency C-V characteristics at 1 MHz becomes larger with increasing RTA temperature. The C-V curves also shift to the left side as the measure temperature increases from RT to 150°C. It also shows the ledge on the C-V curves of samples with RTA at elevated measure temperature.

High Frequency Dielectric Permittivity Measurement of Dielectric Layer of MLCC Using Non-Contact Probe

2007 ◽  
pp. 243-246
Author(s):  
Hirofumi Kakemoto ◽  
Jianyong Li ◽  
Takakiyo Harigai ◽  
Song Min Nam ◽  
Satoshi Wada ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Dielectric Layer ◽  
High Frequency ◽  
Permittivity Measurement ◽  
Contact Probe

High frequency dielectric mapping using un-contact probe for dielectric materials

2005 ◽  
Author(s):  
Hirofumi Kakemoto ◽  
Song-Min Nam ◽  
Satoshi Wada ◽  
Takaaki Tsurumi
Keyword(s):  
High Frequency ◽  
Dielectric Materials ◽  
Contact Probe

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

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