Effect of Sr/Ba Ratio on Dielectric Properties of BSTN Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 125-128 ◽  
Author(s):  
Zong Hui Zhou ◽  
Xin Cheng ◽  
Pi Yi Du ◽  
Jun Chang ◽  
Shi Feng Huang ◽  
...  

The phase composition of (1-x)BaO·xSrO·0.7TiO2·0.3Nb2O5 (BSTN) composite ceramics was analyzed by XRD, and the effect of Sr/Ba ratio on the dielectric properties of BSTN was investigated by impedance analyzer. The results showed that any sample with different x value contained two phases-the perovskite phase and the tungsten bronze phase. The dielectric constants of BSTN basically decreased while the tanδ increased with the increase in x value. Both dielectric constant and tanδ decreased with the applied frequency increased for the same x value. There were two Curie points for BSTN composite ceramics. The first one belonging to the perovskite phase decreased with the increase in x value, but the second one belonging to the tungsten bronze phase kept almost constant at about 300°C.

2008 ◽  
Vol 368-372 ◽  
pp. 72-74
Author(s):  
Xin Cheng ◽  
Zong Hui Zhou

The effects of Mn doping on the phase composition and dielectric properties of (1-x)BaO·xSrO·0.7TiO2·0.3Nb2O5 (BSTN) composite ceramics was investigated. The results showed that the dielectric constants of 0.7BaO·0.3SrO·(0.7-z)TiO2·0.3Nb2O5·zMnO2 (BSTNM) composite ceramics basically decreases as the content of doped MnO2 increases at the same applied frequency, while tanδ decreases when value z≤0.01 but increases when value z>0.01. The phase transition temperature of tungsten bronze phase in BSTNM composite ceramics increases with the increase of value z.


2015 ◽  
Vol 655 ◽  
pp. 174-177
Author(s):  
Kai Sun ◽  
Run Hua Fan ◽  
Zi Dong Zhang ◽  
Xi Hua Zhang ◽  
Ke Lan Yan ◽  
...  

In this paper, Cu/SiO2composites with different metal contents were successfully prepared by a selective reduction process. The phase composition and microstructure of composites were analyzed by XRD and SEM, respectively. The results show that spherical copper particles are uniformly distributed in silica matrix. The impedance and permittivity of composites were tested with RF impedance analyzer (0.1~1 GHz). It is indicated Cu/SiO2composites exhibit capacitive character. In addition, the dielectric constants get enlarged due to the enhancement of interface polarization.


2001 ◽  
Vol 16 (7) ◽  
pp. 2057-2063 ◽  
Author(s):  
Jiin-Jyh Shyu ◽  
Hsin-Wei Peng

The crystallization and dielectric properties of SrO–BaO–Nb2O5–GeO2 glass–ceramics were investigated. One- and two-stage heat-treatment methods were used to convert the parent glass to glass–ceramics. Strontium barium niobate (SBN) with a tetragonal tungsten-bronze structure formed as the major crystalline phase. When the crystallizing temperature/time was increased, the secondary crystalline BaGe2O5 phase coexisted with SBN. BaGe2O5 formed as a surface layer grown from the surface into the interior of the sample. The dendritic morphology of SBN crystals was examined. The glass–ceramics crystallized by two-stage heat treatment have higher dielectric constants than those crystallized by one-stage heat treatment. The highest dielectric constant that was obtained in the present glass–ceramics was 320. The glass–ceramics showed relaxor-type dielectric behavior.


2012 ◽  
Vol 512-515 ◽  
pp. 828-831 ◽  
Author(s):  
Wei Dong ◽  
Chang An Wang ◽  
Lei Yu ◽  
Shi Xi Ouyang

Porous Si3N4/SiO2/BN composite ceramics with high strength and low dielectric constant were prepared by dry-pressing process and pressureless sintering at 1750°C for 1.5 h in flow nitrogen. The influences of BN content on microstructure, porosity, mechanical and dielectric properties of the porous Si3N4/SiO2/BN composite ceramics were discussed. The results showed that the porous Si3N4/SiO2/BN composite ceramics with porosity ranging from 29% to 48% were fabricated by adjusting the content of BN. The flexural strength of the porous Si3N4/SiO2/BN composite ceramics was 78215 MPa. The dielectric constant of the porous Si3N4/SiO2/BN composite ceramics was 3.9~5 at 1 MHz.


2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.


1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.


2012 ◽  
Vol 512-515 ◽  
pp. 1180-1183
Author(s):  
Qian Qian Jia ◽  
Hui Ming Ji ◽  
Shan Liu ◽  
Xiao Lei Li ◽  
Zheng Guo Jin

The (Ba, Sr)TiO3 (hereafter BST) ceramics are promising candidate for applying in tunable devices. MgO coated BST-Mg2TiO4 (BSTM-MT) composite ceramics were prepared to obtain the low dielectric constant, low dielectric loss, good dielectric constant temperature stability, and high tunability of BST ceramics. The Ba0.55Sr0.40Ca0.05TiO3 nanoparticles were coated with MgO using the precipitation method and then mixed with Mg2TiO4 powders to fabricate BSTM-MT composite ceramics. The morphologies, phases, elements, and dielectric properties of the sintered ceramics were investigated. The core-shell structure of BST powder wrapped with MgO was clearly observed from the TEM image. After sintered at 1100 °C for 2 h, the composite ceramics expressed dense microstructures from SEM images and two main phases BST and Mg2TiO4 were detected in the XRD patterns. The dielectric constant and loss tangent were both reduced after the coating. The reduced dielectric constant and loss tangent of BSTM-MT were 190, 0.0011 (2MHz), respectively. The ceramics exhibited the diffuse phase transition near the Curie temperature and the Curie temperature shifted from 10 °C to 5 °C after the coating. Since the continuous Ti-O bonds were disconnected with the MgO coating, the tunability was reduced to 15.14 % under a DC bias field of 1.1 kV/mm. The optimistic dielectric properties made it useful for the application of tunable capacitors and phase shifters.


2016 ◽  
Vol 848 ◽  
pp. 28-31
Author(s):  
Han Jin ◽  
Yong Feng Li ◽  
Zhong Qi Shi ◽  
Hong Yan Xia ◽  
Guan Jun Qiao

Mullite/10 wt. %h-BN composites with 5 wt. % Y2O3 additive were fabricated by pressureless sintering at different temperatures. The densification, phase composition, microstructure, mechanical and dielectric properties of the mullite/h-BN composites were investigated. With the addition of Y2O3, the sintering temperature of the mullite/h-BN composites declined, while the density, mechanical and dielectric properties all increased. The addition of Y2O3 promoted the formation of liquid phase at high temperature, which accelerated the densification. Besides, Y2O3 particles which were located at the grain boundaries inhibited the grain growth of mullite matrix. For the mullite/h-BN composites with Y2O3 additive, the appropriate sintering temperature was about 1600°C. The relative density, flexural strength, fracture toughness and dielectric constant of the Y2O3 doped mullite/h-BN composite sintered at 1600 °C reached 82%, 135 MPa, 2.3 MPa·m1/2 and 4.9, respectively.


1997 ◽  
Vol 12 (2) ◽  
pp. 526-530 ◽  
Author(s):  
G. L. Roberts ◽  
R. J. Cava ◽  
W. F. Peck ◽  
J. J. Krajewski

The results of measurements of dielectric constants, in the vicinity of ambient temperature, are presented for eight barium titanium niobium oxides (BaTi1+2nNb4O13+4n for n = 0, 1, 2, 3, 4; Ba3Ti4Nb4O21, Ba3Ti5Nb6O28, and Ba6Ti2Nb8O30) in polycrystalline ceramic form. The dielectric constants are in the range of 30 to 70. The results of dielectric measurements on solid solutions obtained by partial substitution of Ta for Nb are also reported. These substitutions do not dramatically increase the dielectric constants. One material, Ta-substituted Ba3Ti5Nb6O28, has a very low temperature coefficient of dielectric constant at K ≈ 45.


1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.


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