The Experiment Research of Gas-Assisted Ion Etching Nanograting

2014 ◽  
Vol 609-610 ◽  
pp. 32-38
Author(s):  
Mei Hua Liu ◽  
Di Feng ◽  
Yan Li ◽  
Bao Yin Yao ◽  
Shuai Zhong ◽  
...  
Keyword(s):  
Reaction Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Grating Period ◽  
Ion Etching ◽  
Dual Beam ◽  
Working Principle ◽  
Reducing Costs ◽  
High Depth ◽  
High Reaction Rate

By using scanning electron microscope and focused ion beam (SEM-FIB) dual beam system which was self-assembled, with xenon diflouride, nanograting structure has been successfully processed on the gilded silicon wafer. The grating period is 950 nm, and the width of single etched groove is 652 nm. Gas-assisted ion etching is also known as focused ion beam assisted etching (FIBAE). The working principle of FIBAE was analyzed firstly. The different experimental results of nanograting structures which were fabricated by FIBAE and FIB alone were investigated. And the effect of exposure time on nanograting structures was also studied detailed in the FIBAE process. The Results showed that FIBAE has the technology advantage of high reaction rate, saving time, reducing costs, and deep etching, and it provides an effective method for processing nanograting of high depth in the future.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

Dual Beam Focused Ion Beam and Transmission Electron Microscopies of Nanoscale Sectioned Diatom Frustules

2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
T Gutu ◽  
J Wu ◽  
C Jeffreys ◽  
C-H Chang ◽  
G Rorrer ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Microscopies ◽  
Dual Beam ◽  
Transmission Electron

scholarly journals Assessment of wear micromechanisms on a laser textured cemented carbide tool during abrasive-like machining by FIB/FESEM

Friction ◽  
2020 ◽  
Author(s):  
Shiqi Fang ◽  
Dirk Bähre ◽  
Luis Llanes
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Local Level ◽  
Surface Texturing ◽  
Laser Surface ◽  
Laser Surface Texturing ◽  
Near Surface ◽  
Dual Beam ◽  
Cemented Carbide Tool ◽  
Microstructural Integrity

Abstract The combined use of focused ion beam (FIB) milling and field-emission scanning electron microscopy inspection (FESEM) is a unique and successful approach for assessment of near-surface phenomena at specific and selected locations. In this study, a FIB/FESEM dual-beam platform was implemented to docment and analyze the wear micromechanisms on a laser-surface textured (LST) hardmetal (HM) tool. In particular, changes in surface and microstructural integrity of the laser-sculptured pyramids (effective cutting microfeatures) were characterized after testing the LST-HM tool against a steel workpiece in a workbench designed to simulate an external honing process. It was demonstrated that: (1) laser-surface texturing does not degrade the intrinsic surface integrity and tool effectiveness of HM pyramids; and (2) there exists a correlation between the wear and loading of shaped pyramids at the local level. Hence, the enhanced performance of the laser-textured tool should consider the pyramid geometry aspects rather than the microstructure assemblage of the HM grade used, at least for attempted abrasive applications.

Precision TEM Specimen Preparation for Integrated Circuits using Dual-Beam FIB Lift-Out Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 516-517
Author(s):  
Youren Xu ◽  
Chris Schwappach ◽  
Ron Cervantes
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Single Beam ◽  
Dual Beam ◽  
Technological Advances ◽  
Endpoint Control ◽  
Practical Standpoint ◽  
Beam Damage

Focused ion beam lift-out technique has become increasingly attractive to the TEM community due to its unique advantage of no mechanical grinding/polishing involved in the process [1-3]. The technique essentially consists of two parts: preparation of membrane using focused ion beam (FIB) and transfer of the membrane (lift-out) to a grid. Up to date, this technique has only been demonstrated on single beam FIB systems. From a practical standpoint, overall sample quality (thickness) and lack of end-point precision are two major issues associated with the conventional single beam FIB technique. These issues are primarily related to ion beam damage and endpoint control encountered during the final stages of specimen thinning. As a result, the widespread use of FIB lift-out technique for high precision TEM specimen preparation has been limited. Recent technological advances have made it possible to combine both an electron beam column and an ion beam column into an integrated dual beam-focused ion beam (DB-FIB) system.

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Nanowire ◽  
Dual Beam ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching

1984 ◽  
Vol 23 (Part 2, No. 3) ◽  
pp. L172-L174 ◽  
Author(s):  
Shinji Matsui ◽  
Katsumi Mori ◽  
Takao Shiokawa ◽  
Koichi Toyoda ◽  
Susumu Namba
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Etching

A Direct and Quantitative Three-Dimensional Reconstruction of the Internal Structure of Disordered Mesoporous Carbon with Tailored Pore Size

2013 ◽  
Vol 19 (3) ◽  
pp. 745-750 ◽  
Author(s):  
Juan Balach ◽  
Flavio Soldera ◽  
Diego F. Acevedo ◽  
Frank Mücklich ◽  
César A. Barbero
Keyword(s):  
Pore Size ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Quantitative Characterization ◽  
Resorcinol Formaldehyde ◽  
Dual Beam ◽  
Dimensional Reconstruction ◽  
A New Technique

AbstractA new technique that allows direct three-dimensional (3D) investigations of mesopores in carbon materials and quantitative characterization of their physical properties is reported. Focused ion beam nanotomography (FIB-nt) is performed by a serial sectioning procedure with a dual beam FIB-scanning electron microscopy instrument. Mesoporous carbons (MPCs) with tailored mesopore size are produced by carbonization of resorcinol-formaldehyde gels in the presence of a cationic surfactant as a pore stabilizer. A visual 3D morphology representation of disordered porous carbon is shown. Pore size distribution of MPCs is determined by the FIB-nt technique and nitrogen sorption isotherm methods to compare both results. The obtained MPCs exhibit pore sizes of 4.7, 7.2, and 18.3 nm, and a specific surface area of ca. 560 m2/g.

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