Evaluation of the Stability on the New Alkaline Copper Bulk Slurry

2015 ◽  
Vol 645-646 ◽  
pp. 352-355
Author(s):  
Juan Wang ◽  
Ru Wang ◽  
Guo Dong Chen
Keyword(s):  
Integrated Circuit ◽  
Chemical Mechanical Polishing ◽  
Chelating Agent ◽  
Cost Effective ◽  
Mechanical Polishing ◽  
Oxidizing Agent ◽  
Low Dielectric ◽  
The Stability ◽  
Copper Polishing ◽  
Integrated Circuit Processing

At present, the chemical mechanical polishing is the only means for global planarization of an integrated circuit. After the node of the integrated circuit processing comes into 45nm, the diameter of wafer is 300mm, and the copper interconnect layer is above the 10 layer. In the same time the new low dielectric constant materials are used to the integrated circuit processing. That requires the property of the slurry used in the chemical mechanical polishing stricter. So the domestic and international companies carry out a series research works. Based on investigation and research for many years, the new alkaline copper rough slurry has been developed by the teachers and students in the Hebei University of Technology. The slurry has advantages as disadvantages. The composition of cost-effective slurry is simple and the effect of chemical mechanical polishing is good. But its stability is poor. In order to improve the stability, the compositions of the slurry need to adjust.The new alkaline copper rough slurry composed by abrasive, surface, chelating agent, oxidizing agent and deionized water. Experiments investigate the influence rule of copper polishing rate by the concentration of abrasive, the content of surface, the content of oxidizing agent and the content of chelating agent. The conclusion is arrived. When the concentration of abrasive is 4%, the content of surfactant is 10ml/l, the content of chelating agent is 10ml/l and the content of oxidizing agent is 5ml/l, the copper polishing rate keep 5000 Å /min.

The Study of Stability of Tungsten Plug CMP Slurry for IC Multilevel Interconnect

2013 ◽  
Vol 834-836 ◽  
pp. 658-661
Author(s):  
Ying Qian Jia ◽  
Xin Huan Niu ◽  
Li Li ◽  
Ning Li
Keyword(s):  
Integrated Circuit ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Feature Size ◽  
Wafer Size ◽  
The Stability

With the developing of integrated circuit(IC) technique, improving of integration level, reducing of feature size and increasing the wafer size, the stringent requirements for global planarization during IC fabrication are raised. During chemical mechanical polishing(CMP) of multilevel interconnect for IC, there are obvious influence of the polishing quality on performances of the device．CMP slurry is one of the important factors of influencing the polishing quality. In this work, the stability of tungsten plug CMP slurry for IC multilevel interconnect was studied. Through experiment, interaction between the components in the CMP slurry was analyzed, and stable slurry with optimized polishing parameters to achieve higher removal rate were defined．

Measuring Surface Uniformity in Chemical Mechanical Polishing

2009 ◽  
Vol 76-78 ◽  
pp. 459-464
Author(s):  
Jae Won Baik ◽  
Chang Wook Kang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Geometric Mean ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Semiconductor Wafer ◽  
Statistical Process ◽  
Significant Step ◽  
The Difference ◽  
Thickness Variations ◽  
The Stability

Chemical mechanical polishing (CMP) is a technique used in semiconductor fabrication for planarizing the top surface of an in-process semiconductor wafer. Especially, Post-CMP thickness variations are known to have a severe impact on the stability of downstream processes and ultimately on device yield. Hence understanding how to quantify and characterize this non-uniformity is significant step towards statistical process control to achieve higher quality and enhanced productivity. The main reason is that the non-uniformed interface between the wafer and the machine-pad adversely affects the polishing performance and ultimate surface uniformity. The purpose of this paper is to suggest a new measure that estimates the uniformity of wafer surface considering the difference of the amount of abrasion between the center and the edge. This new measure which is called the Coefficient of Uniformity is defined as the following ratio: Geometric Mean (GM) / Arithmetic Mean (AM). This metric can be evaluated regionally to quantify the non-uniformity on the wafer surface from the center to the edge. Further simulations show that this new measure is insensitive to shift of the wafer center and sensitive to shift of the wafer edge. This trend indicates that this new measure is a very useful to test the non-uniformity of wafer after CMP polishing.

Influence of Lithography Distortion due to Metal Fill on CA

2014 ◽  
Vol 900 ◽  
pp. 651-655
Author(s):  
Xiao Ming Chen ◽  
Ke Qin Wang ◽  
Song Song Li
Keyword(s):  
Circuit Design ◽  
Integrated Circuit ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Critical Area ◽  
Integrated Circuit Design ◽  
Technology Node ◽  
Design And Manufacturing ◽  
The Future

In the process of integrated circuit design and manufacturing, dummy metal fill can improve the planarity of layout after Chemical Mechanical Polishing (CMP). However, it will also cause lithography distortion and Critical Area (CA) variation. This paper compares and analyzes the influences of lithography distortion due to metal fill on CA from the perspectives of different defect particles based on 45nm technology node. The results indicate that dummy metal fill can increase open CA after lithography and the defect particle with the diameter of 0.066um leads to the largest increment percentage of open CA, which will take up almost 10%. This paper is instructive in researching dummy metal fill and CA or related fields in the future.

Chemical Mechanical Polishing on Extremely Low Expansion Glass Ceramic Wafers

2016 ◽  
Vol 874 ◽  
pp. 389-394 ◽  
Author(s):  
Zhi Feng Shi ◽  
Zhen Yu Zhang ◽  
Si Ling Huang ◽  
Bo Ya Yuan ◽  
Xiao Guang Guo ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Integrated Circuit ◽  
Glass Ceramic ◽  
Chemical Mechanical Polishing ◽  
High Performance ◽  
Ph Value ◽  
Liquid Crystal Display ◽  
Glass Ceramics ◽  
Mechanical Polishing ◽  
High Precision Measurement

Extremely low expansion glass ceramics are widely used in integrated circuit (IC), liquid crystal display (LCD) lithography, high-precision measurement and astronomy, due to their excellent mechanical properties and chemical stability at higher temperatures. Nevertheless, the extremely low expansion glass ceramics are hard-to-machine materials due to their hard-brittle nature, resulting in cracking, chipping and scratching induced in conventional machining. This leads to higher surface roughness, and is not qualified for high-performance devices. In this study, surface roughness of 0.447 and 4.904 nm are achieved for Ra and peak-to valley (PV), respectively with a measurement area of 70×53 μm2 after chemical mechanical polishing (CMP). Firstly, the glass ceramic wafers are lapped using silicon carbide (SiC) abrasives on a cast-iron plate. After lapping, the wafers are polished by CeO2 slurry in a sequence of 3 μm and 500 nm in diameter, and polyurethane and floss pads are used correspondingly. Finally, CMP is employed on the glass ceramic wafers. Floss pad and silica slurry are used in CMP in an alkaline solution with a pH value of 8.5. After CMP, the wafers are cleaned and dried by deionized wafer and compressed air, respectively.

Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate

2014 ◽  
Vol 1027 ◽  
pp. 213-216
Author(s):  
Su Fang Fu ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Jian Xiu Su
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Chemical Action ◽  
Crystal Substrate ◽  
The Stability ◽  
Polishing Efficiency

Chemical mechanical polishing (CMP) had been considered as the most practical and effective method of achieving an ultra-smooth and non-damage surface in manufacturing SiC crystal substrate. CMP slurry was one of the key factors of CMP technology. In this paper, through investigating the changes of several core factors to evaluate the performance of CMP, such as the material removal rate (MRR), surface roughness Ra, 3D surface profiler, etc., the influence of various slurry and its content on the polishing efficiency and surface finish quality had been studied. The research results showed that different oxidant had different chemical action mechanism, also affecting the stability of CMP slurry and surface quality of specimen; adding suitable an oxidant to slurry could effectively improve the CMP performance.

CMP Modeling and Characterization for Polysilicon MEMS Structures

2004 ◽  
Vol 816 ◽  
Author(s):  
Brian Tang ◽  
Duane Boning
Keyword(s):  
Integrated Circuit ◽  
Chemical Mechanical Polishing ◽  
Model Development ◽  
Mechanical Polishing ◽  
Step Height ◽  
Mems Devices ◽  
Feature Size ◽  
Pattern Density ◽  
Specific Goal ◽  
Cmp Modeling

AbstractThe current bedrock technology for integrated circuit (IC) planarization, chemical-mechanical polishing is beginning to play an important role in microelectromechnical systems (MEMS). However, MEMS devices operate with bigger feature sizes in comparison to ICs, in order to fulfill mechanical functions. We present an experiment to characterize and model a polysilicon CMP process with the specific goal of examining MEMS-sized test structures. We utilize previously discussed CMP models and examine whether assumptions from IC CMP can be applied to MEMS CMP. An analysis of the data collected points to a polishing dependence on not only pattern density, but also partly on feature size or feature configuration. The existing pattern density and step height CMP models are able to capture the major trends in up and down area polishing. However, certain layout features relevant to MEMS are difficult to predict, motivating the need for further model development and application.

Effect of Amine Based Chelating Agent and H2O2on Cobalt Contact Chemical Mechanical Polishing

2018 ◽  
Vol 7 (8) ◽  
pp. P416-P422 ◽  
Author(s):  
Qiyuan Tian ◽  
Shengli Wang ◽  
Yue Xiao ◽  
Chenwei Wang ◽  
Qingwei Wang ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Chelating Agent ◽  
Mechanical Polishing

Material Characterization and Chemical-Mechanical Polishing of Low-Dielectric Constant Fluorinated Silicon Dioxide Films

1996 ◽  
Vol 427 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Charles C.F. Lin ◽  
Yuan-Tsu Hsieh ◽  
M.-S. Feng
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Characterization ◽  
Moisture Absorption ◽  
Removal Rate ◽  
Fluorine Content ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Fluorinated Oxides

AbstractNanohardness, modulus, and bonding structure of fluorinated silicon dioxides are characterized in order to evaluate their correlations with chemical-mechanical polishing (CM[P) performance. Alkaline-based slurry with adjusted pH is used for polishing in an attempt to delineate the chemical erosion from mechanical abrasion effects during CMIP of fluorinated oxides. The increase in CMIP removal rate and the reduction in refractive index with increasing fluorine content in the fluorinated oxides are related to the change in bonding configuration. The enhanced moisture absorption is due to the presence of fluorine in the oxide network.

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