Study on Applicability of Large-Area EB Irradiation to Micro-Deburring

2015 ◽  
Vol 656-657 ◽  
pp. 369-374 ◽  
Author(s):  
Tomoaki Miyoshi ◽  
Akira Okada ◽  
Yasuhiro Okamoto
Keyword(s):  
Laser Cutting ◽  
Material Removal ◽  
High Energy ◽  
Large Area ◽  
Heat Accumulation ◽  
Machining Processes ◽  
Workpiece Material ◽  
Energy Density Distribution ◽  
Uniform Energy Density ◽  
The Difference

In a large-area electron beam (EB) irradiation method developed recently, high energy EB can be obtained without focusing the beam, and large-area EB with almost uniform energy density distribution of 60mm in diameter can be used for instantly melting and evaporating metal surface. Then, the surface smoothing and surface modification of metal molds made of steel, cemented carbide and ceramics can be performed efficiently. When the large-area EB is irradiated to a sharp edge, the material removal remarkably progresses at the edge due to the heat accumulation and EB concentration there, which leads to the edge rounding. Our previous study clarified that micro-deburring was also possible by using this phenomenon. Moreover, this method would be effective for removal of discontinuous micro burrs generated by thermal machining processes, such as EDM and laser cutting. In this study, the possibility to completely remove micro burrs generated in EDM was experimentally investigated. The difference in micro-deburring characteristics with the type of workpiece material was also investigated. As a result, the EDM micro burrs with a height of about up to 50μm could be completely removed by this method. Furthermore, it was made clear that the magnetic property of workpiece materials greatly influenced the deburring characteristics, and the thermal property such as melting point and thermal conductivity also did.

Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography

2008 ◽  
Vol 1069 ◽  
Author(s):  
Ryoji Kosugi ◽  
Toyokazu Sakata ◽  
Yuuki Sakuma ◽  
Tsutomu Yatsuo ◽  
Hirofumi Matsuhata ◽  
...  
Keyword(s):  
High Energy ◽  
Structural Features ◽  
Incidence Geometry ◽  
Voltage Source ◽  
Large Area ◽  
Chip Area ◽  
Power Mosfets ◽  
X Ray ◽  
Pn Junctions ◽  
The Difference

ABSTRACTIn practical use of the SiC power MOSFETs, further reduction of the channel resistance, high stability under harsh environments, and also, high product yield of large area devices are indispensable. Pn diodes with large chip area have been already reported with high fabrication yield, however, there is few reports in terms of the power MOSFETs. To clarify the difference between the simple pn diodes and power MOSFETs, we have fabricated four pn-type junction TEGs having the different structural features. Those pn junctions are close to the similar structure of DIMOS (Double-implanted MOS) step-by-step from the simple pn diodes. We have surveyed the V-I characteristics dependence on each structural features over the 2inch wafer. Before their fabrication, we formed grid patterns with numbering over the 2inch wafer, then performed the synchrotron x-ray topography observation. This enables the direct comparison the electrical and spectrographic characteristics of each pn junctions with the fingerprints of defects.Four structural features from TypeA to TypeD are as follows. TypeA is the most simple structure as same as the standard pn diodes formed by Al+ ion implantation (I/I), except that the Al+ I/I condition conforms to that of the p-well I/I in the DIMOS. The JTE structure was used for the edge termination on all junctions. While the TypeA consists of one p-type region, TypeB and TypeC consists of a lot of p-wells. The difference of Type B and C is a difference of the oxide between the adjacent p-wells. The oxide of TypeB consists of the thick field oxide, while that of TypeC consists of the thermal oxide corresponding to the gate oxide in the DIMOS. In the TypeD structure, n+ region corresponding to the source in the DIMOS was added by the P+ I/I. The TypeD is the same structure of the DIMOS, except that the gate and source contacts are shorted. The V-I measurements of the pn junctions are performed using the KEITHLEY 237 voltage source meters with semi-auto probe machine. An active area of the fabricated pn junctions TEGs are 150um2 and 1mm2. Concentration and thickness of the drift layer are 1e16cm−3 and 10um, respectively.In order to compare the V-I characteristics of fabricated pn junctions with their defects information that obtained from x-ray topography measurements directly, the grid patterns are formed before the fabrication. The grid patterns were formed over the 2inch wafer by the SiC etching. The synchrotron x-ray topography measurements are carried out at the Beam-Line 15C in Photon-Factory in High-Energy-Accelerator-Research-Organization. Three diffraction conditions, g=11-28, -1-128, and 1-108, are chosen in grazing-incidence geometry (improved Berg-Barrett method).In the presentation, the V-I characteristics mapping on the 2inch wafer for each pn junctions, and the comparison of V-I characteristics with x-ray topography will be reported.

P20 phosphor on polyimide as a large area high-resolution transmission screen for slow scan CCD systems

1995 ◽  
Vol 53 ◽  
pp. 20-21
Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  
Keyword(s):  
Mechanical Stability ◽  
High Energy ◽  
Practical Implementation ◽  
Line Pair ◽  
Modulation Transfer ◽  
Large Area ◽  
Ccd Imaging ◽  
Transmission Electron ◽  
The One ◽  
Beam Broadening

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.

scholarly journals Diffuse γ-ray emission toward the massive star-forming region, W40

2020 ◽  
Vol 639 ◽  
pp. A80
Author(s):  
Xiao-Na Sun ◽  
Rui-Zhi Yang ◽  
Yun-Feng Liang ◽  
Fang-Kun Peng ◽  
Hai-Ming Zhang ◽  
...  
Keyword(s):  
Cosmic Ray ◽  
High Energy ◽  
Young Star ◽  
Gas Content ◽  
Large Area ◽  
Stellar Cluster ◽  
Production Region ◽  
Star Forming ◽  
Photon Index ◽  
Young Star Clusters

We report the detection of high-energy γ-ray signal towards the young star-forming region, W40. Using 10-yr Pass 8 data from the Fermi Large Area Telescope (Fermi-LAT), we extracted an extended γ-ray excess region with a significance of ~18σ. The radiation has a spectrum with a photon index of 2.49 ± 0.01. The spatial correlation with the ionized gas content favors the hadronic origin of the γ-ray emission. The total cosmic-ray (CR) proton energy in the γ-ray production region is estimated to be the order of 1047 erg. However, this could be a small fraction of the total energy released in cosmic rays (CRs) by local accelerators, presumably by massive stars, over the lifetime of the system. If so, W40, together with earlier detections of γ-rays from Cygnus cocoon, Westerlund 1, Westerlund 2, NGC 3603, and 30 Dor C, supports the hypothesis that young star clusters are effective CR factories. The unique aspect of this result is that the γ-ray emission is detected, for the first time, from a stellar cluster itself, rather than from the surrounding “cocoons”.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Fermi LARGE AREA TELESCOPE DETECTION OF TWO VERY-HIGH-ENERGY ( E > 100 GeV) γ-RAY PHOTONS FROM THE z = 1.1 BLAZAR PKS 0426–380

2013 ◽  
Vol 777 (1) ◽  
pp. L18 ◽  
Author(s):  
Y. T. Tanaka ◽  
C. C. Cheung ◽  
Y. Inoue ◽  
Ł. Stawarz ◽  
M. Ajello ◽  
...  
Keyword(s):  
High Energy ◽  
Large Area ◽  
Very High Energy ◽  
Γ Ray ◽  
Very High

scholarly journals Influence of Apical Patency and Cleaning of the Apical Foramen on Periapical Extrusion in Retreatment

2013 ◽  
Vol 24 (5) ◽  
pp. 482-486 ◽  
Author(s):  
Marili Doro Andrade Deonizio ◽  
Gilson Blitzkow Sydney ◽  
Antonio Batista ◽  
Roberto Pontarolo ◽  
Paulo Ricardo Bittencourt Guimarães ◽  
...  
Keyword(s):  
Material Removal ◽  
Filling Material ◽  
Mean Values ◽  
Filtration System ◽  
Root Canal Retreatment ◽  
Significant Difference ◽  
Before And After ◽  
The Mean ◽  
The Difference ◽  
Removal Technique

This study evaluated the influence of apical patency, root filling removal technique and cleaning of the apical foramen, concerning the amount of debris extruded during root canal retreatment. Forty mandibular incisors were randomly assigned to 4 groups - GIM (n=10), GIIM (n=10), GIPT (n=10) and GIIPT (n=10), which were named according to leaving (I) or not (II) apical patency during canal preparation and filling removal technique (manual - M or ProTaper system - PT). After filling material removal, each specimen of each group had the apical foramen cleaned by sizes 15, 20 and 25 instruments, generating 12 subgroups: GIM15, GIM20, GIM25, GIIM15, GIIM20, GIIM25, GIPT15, GIPT20, GIPT25, GIIPT15, GIIPT20 and GIIPT25. Extruded filling debris was collected by a Milipore filtration system, an HV-durapore, 0.45 µm pore filter with a 25 mm diameter. The filters were weighed before and after the collection on an analytical scale (10–5 g), and the difference was calculated. The mean weight of extruded filling debris was analyzed statistically by Kruskal-Wallis and Friedman ANOVA tests (α=0.05). The mean values found in the groups (in mg) were: GIM (0.95±0.94), GIIM (0.47±0.62), GIPT (0.30±0.31) and GIIPT (0.32±0.44). There was no statistically significant difference among any of the groups or subgroups (p>0.05). ProTaper provided the smallest amount of extruded filling material, regardless of presence or absence of apical patency, followed by manual technique, without and with apical patency. Additional amounts of debris were collected during cleaning of the apical foramen, regardless of the instrument, presence/absence of patency or root filling removal technique.

scholarly journals Overheating In Silicon During Pulsed-Laser Irradiation?

1985 ◽  
Vol 51 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Laser Irradiation ◽  
Thermal Strain ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
High Energy ◽  
Time Resolved ◽  
Synchrotron Source ◽  
Zero Velocity ◽  
The Difference ◽  
Pulsed Laser Irradiation

ABSTRACTNanosecond resolution time-resolved x-ray diffraction measurements of thermal strain have been used to measure the interface temperatures in silicon during pulsed-laser irradiation. The pulsed-time-structure of the Cornell High Energy Synchrotron Source (CHESS) was used to measure the temperature of the liquid-solid interface of <111> silicon during melting with an interface velocity of 11 m/s, at a time of near zero velocity, and at a regrowth velocity of 6 m/s. The results of these measurements indicate 110 K difference between the temperature of the interface during melting and regrowth, and the measurement at zero velocity shows that most of the difference is associated with undercooling during the regrowth phase.

scholarly journals Towards Sustainable Development: Building’s Retrofitting with PCMs to Enhance the Indoor Thermal Comfort in Tropical Climate, Malaysia

2021 ◽  
Vol 13 (7) ◽  
pp. 3614
Author(s):  
Zeyad Amin Al-Absi ◽  
Mohd Isa Mohd Hafizal ◽  
Mazran Ismail ◽  
Azhar Ghazali
Keyword(s):  
Climate Change ◽  
Sustainable Development ◽  
Thermal Comfort ◽  
Phase Change Materials ◽  
Thermal Environment ◽  
High Energy ◽  
Transition Temperatures ◽  
Indoor Thermal Environment ◽  
Adaptive Thermal Comfort ◽  
The Difference

Building sector is associated with high energy consumption and greenhouse gas emissions, which contribute to climate change. Sustainable development emphasizes any actions to reduce climate change and its effect. In Malaysia, half of the energy utilized in buildings goes towards building cooling. Thermal comfort studies and adaptive thermal comfort models reflect the high comfort temperatures for Malaysians in naturally conditioned buildings, which make it possible to tackle the difference between buildings’ indoor temperature and the required comfort temperature by using proper passive measures. This study investigates the effectiveness of building’s retrofitting with phase change materials (PCMs) as a passive cooling technology to improve the indoor thermal environment for more comfortable conditions. PCM sheets were numerically investigated below the internal finishing of the walls. The investigation involved an optimization study for the PCMs transition temperatures and quantities. The results showed significant improvement in the indoor thermal environment, especially when using lower transition temperatures and higher quantities of PCMs. Therefore, the monthly thermal discomfort time has decreased completely, while the thermal comfort time has increased to as high as 98%. The PCM was effective year-round and the optimum performance for the investigated conditions was achieved when using 18mm layer of PCM27-26.

Experimental Study of Machining of Shape Memory Alloys Using Dry Micro Electrical Discharge Machining Process

2018 ◽  
Author(s):  
Sagil James ◽  
Sharadkumar Kakadiya
Keyword(s):  
Shape Memory Alloys ◽  
Shape Memory ◽  
Electrical Discharge ◽  
Material Removal ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
Dielectric Medium ◽  
Machining Process ◽  
Machining Processes ◽  
Micro Electrical Discharge Machining

Shape Memory Alloys are smart materials that tend to remember and return to its original shape when subjected to deformation. These materials find numerous applications in robotics, automotive and biomedical industries. Micromachining of SMAs is often a considerable challenge using conventional machining processes. Micro-Electrical Discharge Machining is a combination of thermal and electrical processes, which can machine any electrically conductive material at micron scale independent of its hardness. It employs dielectric medium such as hydrocarbon oils, deionized water, and kerosene. Using liquid dielectrics has adverse effects on the machined surface causing cracking, white layer deposition, and irregular surface finish. These limitations can be minimized by using a dry dielectric medium such as air or nitrogen gas. This research involves the experimental study of micromachining of Shape Memory Alloys using dry Micro-Electrical Discharge Machining process. The study considers the effect of critical process parameters including discharge voltage and discharge current on the material removal rate and the tool wear rate. A comparison study is performed between the Micro-Electrical Discharge Machining process with using the liquid as well as air as the dielectric medium. In this study, microcavities are successfully machined on shape memory alloys using dry Micro-Electrical Discharge Machining process. The study found that the dry Micro-Electrical Discharge Machining produces a comparatively better surface finish, has lower tool wear and lesser material removal rate compared to the process using the liquid as the dielectric medium. The results of this research could extend the industrial applications of Micro Electrical Discharge Machining processes.

scholarly journals Shape-Dependent Aggregation of Silver Particles by Molecular Dynamics Simulation

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 405 ◽  
Author(s):  
Xue Wang ◽  
Chaofeng Hou ◽  
Chengxiang Li ◽  
Yongsheng Han
Keyword(s):  
Building Blocks ◽  
High Viscosity ◽  
High Energy ◽  
Dynamics Simulation ◽  
Structure Evolution ◽  
Shape Effect ◽  
Silver Particles ◽  
Large Area ◽  
Research Problems ◽  
High Possibility

In crystallization, nanoparticle aggregation often leads to the formation of orderly structures, even single crystals. Why can nanoparticles form orderly structures and what is the mechanism dominating their orderly aggregation? These questions raise interesting research problems, but the occurrences that could answer them often fail to be directly observed, since the interaction among particles is invisible. Here, we report an attempt to discover the interaction and aggregation of building blocks through a computer simulation, focusing on the shape effect of building blocks on the aggregation. Four types of silver building blocks were selected, each consisting of (100) and (111) facets, but the ratio of these two facets was different. It was found that the area of facets played an important role in selecting the aggregation mode. The facets with a large area and high energy had a high possibility of aggregation. In addition, the effects of solvent viscosity and temperature were also investigated. High viscosity and low temperature enhanced the orderliness of aggregation. This paper reports a detailed view of the aggregation process of silver nanoparticles, which is expected to be helpful in understanding the structure evolution of materials in nonclassical crystallization.

Sign in / Sign up

Export Citation Format

Share Document