A Novel Tape and Diamond Process Developed for Polishing Hard Substrates

2015 ◽  
Vol 656-657 ◽  
pp. 416-421
Author(s):  
Rong Hwei Yeh ◽  
T.M. Chao ◽  
Cheng Kuo Lee ◽  
A.H. Tan
Keyword(s):  
Surface Roughness ◽  
Removal Rate ◽  
Lower Surface ◽  
Polished Surface ◽  
Closed Chamber ◽  
Glass Substrates ◽  
Nominal Size ◽  
Hard Glass ◽  
High Removal Rate ◽  
Diamond Abrasive

A nanoscale polish process with improved desired characteristics of low roughness and low scratch counts has been developed using a novel polish tape and diamond abrasive on hard glass substrates. For an improved polishing performance with high removal rate properties and preventing scratches, a novel tape was developed having a nanofiber level, densified surface and a flatter surface by slenderizing the fiber and dispersing ultrafine fiber using an innovative technique. Using this novel polishing tape with a fiber size of 200nm, one can produce a 17% lower surface roughness (Ra) (from 1.05A to 0.87A) and a reduced polished surface scratch count of 53 reduced to 18. The novel nanocluster diamond abrasive is synthesized from carbon atoms of explosives created by detonation in a closed chamber under an oxygen leaked atmosphere ambient. Several crystals are bonded together by layers of non-diamond carbon and other elements, forming aggregates with a nanocluster structure. Using this novel nanocluster diamond along with an ultra-fine diamond mixture with a nominal size of 15nm, one is able to produce an improvement of a 48% lower surface roughness Ra (from 0.87A to 0.45A) and a lower polishing surface scratch count reduced from 18 to 7. Overall, these results indicate that a smoother and a reduced scratch polished substrate results in a significant improvement in disk defects and related magnetic performances.

Research on Ultra-Precision Machining Technology for KTP

2004 ◽  
Vol 471-472 ◽  
pp. 473-476 ◽  
Author(s):  
Ju Long Yuan ◽  
Fei Yan Lou ◽  
Zhi Wei Wang ◽  
M. Chang ◽  
W.P. Du ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Frequency Conversion ◽  
Removal Rate ◽  
Nonlinear Coefficient ◽  
Damage Threshold ◽  
Green Laser ◽  
Machining Process ◽  
Polished Surface ◽  
Nonlinear Frequency ◽  
Ultra Precision

Potassium Titanium Oxide Phosphate (KTP) is a new nonlinear frequency-conversion crystal. It has chemical stability, high nonlinear coefficient, high damage threshold, easily-polished surface, and a broad transparency range. It is be used in solid green laser with medium and low power widely. The requirement for surface roughness is less than 1nm.In this paper, the removal rate and surface roughness are discussed with different velocity, pressure and size of abrasive powder. In order to satisfy the requirement, new polishing techniques with ultra-precision plane polishing machine (Nanopoli-100), and fine AL2O3, SiO2 powders are proposed in this study. The final surface roughness of the KTP is less than 1nm.The machining process and characteristics are also indicated.

Effect of the Al2O3 powder addition on the metal removal rate and the surface roughness of the electrochemical grinding machining

2020 ◽  
Vol 234 (12) ◽  
pp. 1538-1548 ◽  
Author(s):  
Hossam M Yehia ◽  
Mohamed Hakim ◽  
Ahmed El-Assal
Keyword(s):  
Surface Roughness ◽  
Metal Removal ◽  
Removal Rate ◽  
Lower Surface ◽  
Maximum Effect ◽  
Metal Removal Rate ◽  
Powder Addition ◽  
Different Depths ◽  
Electrochemical Grinding ◽  
Better Than

The integrated electrochemical grinding machining has received wide acceptance in the aircraft turbine industry for the machining of blades, vanes, and honeycomb seal rings. Also, medical devices, instruments and forceps, shells, precision nozzles, instrument coupling, and air rotor motors that produced from stainless steel and new materials have all successfully been accomplished with electrochemical grinding. To improve the metal removal rate and to reduce the surface roughness ( Ra) of the electrochemical grinding at high voltages, an integration between the alumina abrasive jet and the electrochemical grinding machining has been performed. The effect of the Al2O3 abrasive content on the metal removal rate and the Ra of the K110 alloy steel using Everite electrochemical grinding 618 at different voltages, different feed rates, different electrolyte NaCl concentrations, and different depths of the cut were successfully investigated. The results revealed that the abrasive electrochemical grinding was better than the electrochemical grinding results. The maximum effect of the Al2O3 on the metal removal rate was achieved at 5 wt.%. The current density in the machining gap was affected by the addition of the Al2O3, where it was decreased at percentages over 5-wt.% Al2O3. The abrasive electrochemical grinding resulted in lower surface roughness than the electrochemical grinding process.

Fundamental Studies on the Mechanisms of Oxide CMP

2000 ◽  
Vol 613 ◽  
Author(s):  
Uday Mahajan ◽  
Seung-Mahn Lee ◽  
Rajiv K. Singh
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Wear Rate ◽  
Removal Rate ◽  
Polished Surface ◽  
Electrostatic Repulsion ◽  
Polishing Process ◽  
Negative Surface ◽  
Negative Surface Charge ◽  
Slurry Stability

ABSTRACTIn this paper, results of studies on the addition of salt to a polishing slurry, in terms of its effect on slurry stability, SiO2 polishing rate and surface roughness of the polished surface are presented. Three salts, viz. LiCl, NaCl and KCl were selected, and three concentrations were tested. Polishing rate measurements using these slurries show that adding salt leads to increased removal rate without affecting surface roughness significantly. Based on these results, we can say that the agglomerates formed by adding salt to the slurry are fairly soft and easily broken during the polishing process. In addition, turbidity and particle size measurements show that significant coagulation of the particles in the slurry occurs only at the highest salt concentration, and is fastest for LiCl and NaCl, with KCl showing the slowest coagulation. From these results, it can be concluded that the enhancement in polish rate is due to increased contact at the wafer-pad-slurry interface, and not due to formation of larger agglomerated particles in the slurry. This is because of reduced electrostatic repulsion between these three surfaces, due to the screening of their negative surface charge by the metal ions in solution, resulting in a higher wear rate.

The Performance and Optimization of Slurry on the Double Sided Polishing Process of Silicon Wafer

2007 ◽  
Vol 359-360 ◽  
pp. 324-328
Author(s):  
Wei Li ◽  
Gang Xiang Hu ◽  
Xiao Dong Hu ◽  
Xiao Zhen Hu
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Process Parameters ◽  
Ph Value ◽  
Removal Rate ◽  
Polished Surface ◽  
Polishing Process ◽  
Stock Removal

This study compares the effectiveness of different polishing slurries for Double Sided Polishing process of Silicon wafer in the polished surface roughness and stock removal rate, discusses the mechanism of Double Sided Polishing for silicon wafer with different type slurries, also the influence of the pH value, temperature and concentration of the slurries are discussed in this paper. Furthermore, by the optimization of the process parameters, the ultra-smooth of polished surface of silicon wafer has been got with higher efficient.

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

Effect of Complex Agent on Copper Dissolution in Alkaline Slurry for Chemical Mechanical Planarization

2012 ◽  
Vol 455-456 ◽  
pp. 1145-1148
Author(s):  
Yan Gang He ◽  
Jia Xi Wang ◽  
Xiao Wei Gan ◽  
Wei Juan Li ◽  
Yu Ling Liu
Keyword(s):  
Surface Roughness ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Dielectric Materials ◽  
Mechanism Analysis ◽  
Copper Dissolution ◽  
Complex Agent ◽  
High Removal Rate ◽  
Rc Delay ◽  
Low K

With the microelectronic technology node moves down to 45 nm and beyond, and to reduce the RC delay time, low-k dielectric materials have been used to replace regular dielectric materials. Therefore, the down force of chemical mechanical planarization (CMP) needs to decrease based on the characteristics of low-k materials: low mechanical strength. In this study, the effect of new complex agent on copper dissolution in alkaline slurry for CMP was investigated. Based on the reaction mechanism analysis of Cu in alkaline slurry in CMP, the performance of Cu removal rate and surface roughness condition were discussed. It has been confirmed that Cu1 slurry demonstrates a relatively high removal rate with low down force. And also, by utilizing the Cu1 slurry, good result of Cu surface roughness were obtained.

Ultra Smooth Planarization Polishing Technique Based on the Cluster Magnetorheological Effect

2010 ◽  
Vol 135 ◽  
pp. 18-23 ◽  
Author(s):  
Qiu Sheng Yan ◽  
Jie Wen Yan ◽  
Jia Bin Lu ◽  
Wei Qiang Gao
Keyword(s):  
Surface Roughness ◽  
Carbonyl Iron ◽  
Material Removal ◽  
Optical Glass ◽  
Removal Rate ◽  
Polished Surface ◽  
Mr Fluid ◽  
Magnetorheological Effect ◽  
The Difference ◽  
Mr Effect

A new planarization polishing method based on the cluster magnetorheological (MR) effect is presented to polish optical glass in this paper. Some process experiments were conducted to reveal the influence of the content of carbonyl iron and the abrasive materials in the MR fluid on the machining effect, and the machining characteristic of polished surface was studied. The results indicate that the surface roughness of the polished workpiece can be reduced rapidly when the strong magnetic field is applied, and ultra smooth surface with Ra 1.4 nm can be achieved while the CeO2 abrasives are used in the MR fluid. The content of carbonyl iron obviously influences the machining effect of this planarization polishing method based on cluster MR-effect. With the increase of the content of carbonyl iron in the MR fluid, the material removal rate improves and the surface roughness reduces rapidly. However, the difference of abrasive material results in various machining effects. As for the K9 optical glass, the CeO2 abrasive is better polishing abrasive than the SiC abrasive in the planarization polishing technique based on the cluster MR-effect.

Surface Roughness Prediction in End Milling of Machinable Glass Ceramic and Optimization by Response Surface Methodology

2011 ◽  
Vol 189-193 ◽  
pp. 1376-1381
Author(s):  
Moola Mohan Reddy ◽  
Alexander Gorin ◽  
Khaled A. Abou El Hossein
Keyword(s):  
Surface Roughness ◽  
Response Surface Methodology ◽  
Response Surface ◽  
Glass Ceramic ◽  
End Milling ◽  
Removal Rate ◽  
Cutting Speed ◽  
Lower Surface ◽  
Depth Of Cut ◽  
Machining Parameters

This paper presents the prediction of a statistically analyzed model for the surface roughness,R_a of end-milled Machinable glass ceramic (MGC). Response Surface Methodology (RSM) is used to construct the models based on 3-factorial Box-Behnken Design (BBD). It is found that cutting speed is the most significant factor contributing to the surface roughness value followed by the depth of cut and feed rate. The surface roughness value decreases for higher cutting speed along with lower feed and depth of cut. Additionally, the process optimization has also been done in terms of material removal rate (MRR) to the model’s response. Ideal combinations of machining parameters are then suggested for common goal to achieve lower surface roughness value and higher MRR.

A Quasi-Static Mechanics Analysis of Three-Dimensional Nanoscale Surface Polishing

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
H. Xu ◽  
K. Komvopoulos
Keyword(s):  
Surface Roughness ◽  
Steady State ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Three Dimensional ◽  
Polished Surface ◽  
Elastic Plastic ◽  
Surface Polishing ◽  
Mechanics Analysis

A quasi-static mechanics analysis of nanoscale surface polishing that provides insight into the surface topography evolution and the removal of material at the asperity level is presented. The analysis is based on a three-dimensional stochastic model that accounts for multiscale (fractal) surface roughness and elastic, elastic-plastic, and fully plastic asperity deformation by hard abrasive nanoparticles embedded in the soft surface layer of a rigid polishing plate. Numerical results of the steady-state roughness of the polished surface, material removal rate, and wear coefficient are presented in terms of the apparent contact pressure, polishing speed, original topography and mechanical properties of the polished surface, average size and density of nanoparticles, and surface roughness of the polishing plate. Simulation trends are associated with elastic-plastic and fully plastic asperity contacts, responsible for irreversible topography changes (roughening effect) and material removal (smoothening effect), respectively. Analytical trends and predictions of the steady-state roughness of the polished surface and material removal rate are shown to be in good agreement with experimental results of nanoscale surface polishing (lapping) of magnetic recording ceramic heads.

Removal Characteristics of Hillock Defects on Silicon Substrate by Chemical Uniformity Etching Enhanced Polishing Slurry

2012 ◽  
Vol 452-453 ◽  
pp. 219-222
Author(s):  
Ming Sun ◽  
Juan Wang ◽  
Ru Wang ◽  
Yu Ling Liu ◽  
Li Bing Yang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Silicon Wafer ◽  
High Speed ◽  
Removal Rate ◽  
Life Time ◽  
Lower Surface ◽  
Surface Strain ◽  
Chemical Additives ◽  
Chemical Etch ◽  
High Removal Rate

The thermally generated defects will lower the life time in bulk silicon and cause increasing in the leakage current of individual diodes in integrated circuits, that will finally cause the malfunction with advanced devices and IC chips. The removal characteristics of hillock defects on the single bare silicon wafer generated by the thermal process were experimentally analysed with respect to the chemical additives enhanced uniform chemical etching and mechanical abrasion of high pure nano sphere colloidal silica interplaying with the alkali based polishing slurry. During the polishing, it was found that the silicon surface contacted with high speed of rotated polishing pad under the down force pressure is chemically dissolved by the slurry containing FA/O organic polyamine(R(NH2)n) agent with adding proper proportional FA/O I non ions surfactant, which effectively lowered the surface strain of slurry contacted to the reactive surface of the wafer and slurry enhanced uniform chemical etch leading to the hillock region and no hillock region. However, by the process of chemical mechanical polishing，the results show it can eliminate the hillock defects on the surface of silicon wafer thoroughly with high removal rate, and achieve lower surface roughness than before process of polishing.

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