scholarly journals A Model for Neutron Radiation Damage in Metal Oxide Semiconductor (MOS) Structures

2016 ◽  
Vol 706 ◽  
pp. 51-54
Author(s):  
Haider F. Abdul Amir ◽  
Abu Hassan Husin ◽  
Saafie Salleh ◽  
Fuei Pien Chee
Keyword(s):  
Lattice Structure ◽  
Neutron Radiation ◽  
Mean Free Path ◽  
Depletion Region ◽  
Oxide Semiconductor ◽  
Mos Devices ◽  
Single Neutron ◽  
Electron Hole Pair ◽  
Mos Structures

Neutron bombardment on semiconductor material causes defects, one such primary physical effect is the formation of displacement defects within the crystal lattice structure, and such defects effectively decrease the mean free path and thus shorten the recombination time. Ionizing radiation causes creation of electron-hole pair in the gate oxide and in parasitic insulating layers of the MOS devices. Calculations show increase of the dark current in depletion region caused by a single neutron. Determination of energy and angular distribution of primary knock on atoms, with 14 MeV neutron irradiation in silicon are presented.

Semiconductor biosensors

1987 ◽  
Vol 316 (1176) ◽  
pp. 47-60 ◽  
Keyword(s):  
Immobilized Enzymes ◽  
Oxide Semiconductor ◽  
Gas Sensitivity ◽  
Metal Gates ◽  
Mos Devices ◽  
Steady State Responses ◽  
Catalytic Metal ◽  
Mos Structures ◽  
State Responses

Hydrogen- and ammonia-sensitive metal-oxide semiconductor (MOS) structures are described. Special attention is paid to ammonia-sensitive MOS devices with thin ( ca . 3 nm) iridium or platinum gates. It is shown how these devices can be used in combination with immobilized enzymes to develop bioprobes or biosensing systems. The temperature dependence of the gas sensitivity of MOS structures with catalytic metal gates is considered. It is demonstrated that at low temperatures (30-40 °C) iridium gates have a faster response to ammonia than platinum gates, and that Ir-Mos structures thus are better suited for the development of biosensors. It is also shown that at high temperatures (190-200 °C) platinum gates can be used to detect unsaturated hydrocarbons such as ethylene. Gas evolution from ripening fruits was monitored with such a sensor. Some biosensing applications of ammonia sensitive Ir-gate MOS devices are described; for example, the determination of urea and creatinine. The devices are used both to measure a pulse of ammonia in a flowthrough system and to measure in situ steady-state responses as a bioprobe. The special features of gas sensors used for biosensing purposes are summarized.

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

2013 ◽  
Vol 740-742 ◽  
pp. 691-694 ◽  
Author(s):  
Christian T. Banzhaf ◽  
Michael Grieb ◽  
Achim Trautmann ◽  
Anton J. Bauer ◽  
Lothar Frey
Keyword(s):  
Silicon Dioxide ◽  
Dielectric Breakdown ◽  
Interface State ◽  
Oxide Semiconductor ◽  
Breakdown Field ◽  
Flat Band ◽  
Mos Devices ◽  
State Densities ◽  
Mos Structures

This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011cm-2eV-1under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.

Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

2021 ◽  
Author(s):  
Hidetoshi Mizobata ◽  
Mikito Nozaki ◽  
Takuma Kobayashi ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Defect Formation ◽  
Fixed Charge ◽  
Oxide Semiconductor ◽  
Oxide Growth ◽  
Charge Generation ◽  
Mos Devices ◽  
Defect Passivation ◽  
Interface Structures ◽  
Electrical Characterizations ◽  
Mos Structures

Abstract A recent study has shown that anomalous positive fixed charge is generated at SiO2/GaN interfaces by forming gas annealing (FGA). Here, we conducted systematic physical and electrical characterizations of GaN-based metal-oxide-semiconductor (MOS) structures to gain insight into the charge generation mechanism and to design optimal interface structures. A distinct correlation between the amount of FGA-induced fixed charge and interface oxide growth indicated the physical origins of the fixed charge to be defect formation driven by reduction of the Ga-oxide (GaOx) interlayer. This finding implies that, although post-deposition annealing in oxygen compensates for oxygen deficiencies and FGA passivates defect in GaN MOS structures, excessive interlayer GaOx growth leads to instability in the subsequent FGA treatment. On the basis of this knowledge, SiO2/GaOx/GaN MOS devices with improved electrical properties were fabricated by precisely controlling the interfacial oxide growth while taking advantage of defect passivation with FGA.

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures

2014 ◽  
Vol 806 ◽  
pp. 133-138 ◽  
Author(s):  
Aleksey Mikhaylov ◽  
Tomasz Sledziewski ◽  
Alexey Afanasyev ◽  
Victor Luchinin ◽  
Sergey A. Reshanov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Reference Sample ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Phosphorus Concentration ◽  
Interface Traps ◽  
Mos Capacitor ◽  
Mos Devices ◽  
Dry Oxidation ◽  
Mos Structures

The electrical properties of metal-oxide-semiconductor (MOS) devices fabricated using dry oxidation on phosphorus-implanted n-type 4H-SiC (0001) epilayers have been investigated. MOS structures were compared in terms of interface traps and reliability with reference sample which was produced by dry oxidation under the same conditions. The notably lower interface traps density measured in MOS capacitor with phosphorus concentration exceeding 1018 cm-3 at the SiO2/SiC interface was attributed to interface traps passivation by incorporated phosphorus ions.

Charge-Transfer Dipoles at the Si-SiO2 Interface and the Metal-Semiconductor Worfunction Difference In Mos Devices.

1987 ◽  
Vol 105 ◽  
Author(s):  
Hisham Z. Massoud
Keyword(s):  
Dipole Moment ◽  
Charge Transfer ◽  
Dipole Moments ◽  
Silicon Substrates ◽  
Interface Dipole ◽  
Mos Devices ◽  
Flatband Voltage ◽  
The Difference ◽  
Definition Of ◽  
Mos Structures

AbstractThe magnitude of the dipole moment at the Si-SiO2 interface resulting from partial charge transfer that takes place upon the formation of interface bonds has been calculated. The charge transfer occurs because of the difference in electronegativity between silicon atoms and SiO2 molecules which are present across the interface. Results obtained for (100) and (111) silicon substrates indicate that the magnitude of the interface dipole moment is dependent on substrate orientation and the interface chemistry. Dipole moments at the Si-SiO2 and gate-SiO2 interfaces should be included in the definition of the flatband voltage VFB of MOS structures. CV-based measurements of the metal-semiconductor workfunction difference φms on (100) and (111) silicon oxidized in dry oxygen and metallized with Al agree with the predictions of this model. Other types of interface dipoles and their processing dependence are briefly discussed.

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