Spin Diffusion in the Finite Magnetic Heterojunction

2017 ◽  
Vol 727 ◽  
pp. 410-414
Author(s):  
Yi Lin Mi
Keyword(s):  
Spin Polarization ◽  
Organic Semiconductors ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Great Influence ◽  
Injection Efficiency ◽  
Spintronic Devices ◽  
Ferromagnetic Electrodes ◽  
Spin Polarons ◽  
The Difference

Spin diffusion in the finite magnetic heterojunction was explored considering the spin dependent conductivity. In organic semiconductor spintronic devices, the up-spin and down-spin polarons have different density once spin injection happens from ferromagnetic electrodes into organic semiconductors. The difference results in the spin dependent conductivity. The calculations show that the spin injection efficiency is dependent on the spin dependent conductivity and the size of the layers. The spin dependent conductivity has great influence on the spin injection efficiency in the finite magnetic heterojunction, when the spin polarization of the organic semiconductors is moderate.

Effect of Electric-Field on Spin Injection Efficiency in the Organic Semiconductors

2016 ◽  
Vol 852 ◽  
pp. 704-707
Author(s):  
Yi Lin Mi ◽  
Jiang Nan Gao
Keyword(s):  
Electrical Conductivity ◽  
Electric Field ◽  
External Electric Field ◽  
Organic Semiconductors ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Conductivity Increase ◽  
Spin Diffusion Length

The spin injection efficiency in the ferromagnet/ organic semiconductors system (FM/OSE) was studied under an external electric-field. It is found that the spin injection efficiency can be strongly influenced by the spin-dependent electrical conductivity and the downstream spin diffusion length of polarons. With the increase of external electric-field, the downstream spin diffusion length increases and makes the spin-dependent electrical conductivity increase, too. So the spin injection efficiency is enhanced. When the external electric-field increases from 1 to 10 mV/μm at T=80K, the spin injection efficiency increases about 20%. It seems that the downstream spin diffusion length is an significant factor to affect the spin injection efficiency in the FM/ OSE under an external electric-field.

Spin Injection in a Ferromagnetic/Organic System

2012 ◽  
Vol 502 ◽  
pp. 416-420
Author(s):  
Yi Lin Mi ◽  
Feng Yan Liu ◽  
Jiang Nan Gao
Keyword(s):  
Electrical Conductivity ◽  
Electric Conductivity ◽  
Organic Semiconductors ◽  
Spin Injection ◽  
Injection System ◽  
Spin Dependence ◽  
Organic System ◽  
Injection Efficiency ◽  
Spin Polarized ◽  
Spin Polarons

Spin injection efficiency in the ferromagnet/ organic semiconductors system (FM/OSEs) was explored considering the spin dependence of the electric-conductivity induced by spin injection in the OSEs. It is known that the OSEs is spin polarized, once spin was injected from FM layer to OSEs layer. The up-spin polarons and the down-spin polarons have different density. The spin dependence of the electric-conductivity is so induced. In the literature, it was usually supposed that the electric-conductivity in the spin polarized OSEs is spin independent. So, it is crucial to reflect the physics in the spin injection. Our work shows that the spin-dependent electrical-conductivity is one of the significant factors which affect the spin injection efficiency. The spin injection efficiency increases obviously with the rising of the spin-dependent electrical-conductivity in the same spin injection system. And the effect becomes larger, when the polaron proportion increases. Furthermore, the effects of interfacial electrochemical-potential proportion on the spin injection efficiency in the heterojunction are also included.

Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides

2018 ◽  
Vol 20 (15) ◽  
pp. 10286-10291 ◽  
Author(s):  
Pei Zhao ◽  
Jianwei Li ◽  
Hao Jin ◽  
Lin Yu ◽  
Baibiao Huang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Spin Injection ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Metal Dichalcogenides ◽  
Spin Filtering

A robust spin-filtering device based on two-dimensional TMDs.

Spin Injection into Graphene from Heusler Alloy Co2MnGe (111) Surface: A First Principles Study

2018 ◽  
Vol 914 ◽  
pp. 111-116 ◽  
Author(s):  
Ya Xin Wang ◽  
Tong Sheng Xia
Keyword(s):  
First Principles ◽  
Heusler Alloy ◽  
Spin Injection ◽  
Ferromagnetic Material ◽  
Nonequilibrium State ◽  
Tunnel Barrier ◽  
Injection Efficiency ◽  
Spintronic Devices ◽  
First Principles Study ◽  
Spin Polarized

To obtain a larger spin signal for use in graphene-based spintronic devices, the spin injection efficiency needs to be enhanced. Previously researchers can increase the efficiency by inserting a tunnel barrier such as Al2O3or MgO between ferromagnet and graphene. However, the key value in spin transport is still very low because of the conductance mismatch as well as the limit to fabricate a high-quality tunnel barrier at the junction surface. Here we use a highly spin-polarized ferromagnetic material—Heusler alloy Co2MnGe as a substitutional scheme without the tunnel barrier. The spin injection efficiency of our Co2MnGe (111)/graphene junction can be as high as 73% which is much higher than 1% of ferromagnet/graphene or 30% of ferromagnet/oxide/graphene using first-principles study. The large spin polarization can be explicated by analyzing the transmission spectrum at the nonequilibrium state.

Enhanced spin accumulation in nano-pillar-based lateral spin valve using spin reservoir effect

2022 ◽  
Author(s):  
Xiaomin Cui ◽  
Shaojie Hu ◽  
Takashi Kimura
Keyword(s):  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Valve ◽  
Spin Current ◽  
Spin Valves ◽  
Pure Spin ◽  
Spin Accumulation ◽  
Spintronic Devices ◽  
High Bias ◽  
Angle Deposition

Abstract Lateral spin valves are ideal nanostructures for investigating spin-transport physics phenomena and promoting the development of future spintronic devices owing to dissipation-less pure spin current. The magnitude of the spin accumulation signal is well understood as a barometer for characterizing spin current devices. Here, we develop a novel fabrication method for lateral spin valves based on ferromagnetic nanopillar structures using a multi-angle deposition technique. We demonstrate that the spin-accumulation signal is effectively enhanced by reducing the lateral dimension of the nonmagnetic spin channel. The obtained results can be quantitatively explained by the confinement of the spin reservoir by considering spin diffusion into the leads. The temperature dependence of the spin accumulation signal and the influence of the thermal spin injection under a high bias current are also discussed.

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

Investigation of spin polarization in Gd-doped ZnO films for high-performance organic spintronic devices

2022 ◽  
Vol 276 ◽  
pp. 115536
Author(s):  
Norhidayah Che Ani ◽  
Mohd Zainizan Sahdan ◽  
Nafarizal Nayan ◽  
Feri Adriyanto ◽  
Kusnanto Mukti Wibowo
Keyword(s):  
Spin Polarization ◽  
High Performance ◽  
Zno Films ◽  
Spintronic Devices ◽  
Doped Zno

Analysis on Kinematic Characteristics of Precision Balls Grinding

2012 ◽  
Vol 497 ◽  
pp. 20-24
Author(s):  
Yong Dai ◽  
Dong Hui Ding ◽  
Xu Xiao ◽  
Xue Shi Liu ◽  
Rui Jiang He ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
Great Influence ◽  
Processing Parameters ◽  
Important Influence ◽  
Normal Movement ◽  
Motion State ◽  
Kinematic Characteristics ◽  
The Difference

In the process of grinding precision balls, the motion state of balls has an important influence on the efficiency and quality. However, the normal movement of balls will be damaged because of slipping, so it must be avoided. Besides, to process different materials of balls, it should use different processing parameters. This paper studies a numerical analysis on the kinematic characteristics of the motion of balls, analyzes processing parameters which impact the motion of balls during grinding and the difference of the motion state of bearing balls and resin balls. Study shows grinding pressure and plate speed have a great influence to the motion of balls during grinding.

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