Synthesis of Ternary Semiconductor Silver Bismuth Telluride by Chemical Bath Deposition
In this study, the synthesis of the ternary semiconductor sensitized silver bismuth telluride (AgBiTe2: SBT) particles was produced in the solution of AgNO3, Bi (NO3)3×5H2O and Na2O3Te by using a chemical bath deposition (CBD) method and annealing at 200°C for 1 h. According to scanning electron microscopy (SEM), the particle size of SBT after annealing was bigger than before annealing. Based on X-ray diffraction, the SBT after annealing for 1h became more crystalline. In addition, the XRF data also demonstrated that the SBT powder consists of Ag, Bi, and Te as dominant elements. The XRD result confirms a successful growth of the SBT particles with rhombohedral crystal structure. Based on the obtaining results, the SBT particles were successfully synthesized and potentially applied for solar cell application.