Development of a Laser Structuring Process for Ceramic Coatings on Injection Molding Tools Produced by MOCVD

2019 ◽  
Vol 809 ◽  
pp. 303-308
Author(s):  
Michaela Sommer ◽  
Gregor Fornalczyk ◽  
Frank Mumme
Keyword(s):  
Thin Films ◽  
Injection Molding ◽  
Laser Processing ◽  
Chemical Vapor ◽  
Ceramic Materials ◽  
Ceramic Coatings ◽  
Machining Parameters ◽  
Molding Process ◽  
Ultrashort Pulse Laser ◽  
Free Process

To increase product quality injection molding tools are equipped with innovative tempering technologies. The customers strive for the technology with the lowest energy consumption. Ceramic materials like yttria-stabilized zirconia (YSZ) are able to thermally insulate tool surfaces providing a more precise temperature regulation with intent to shorten cycle times as well as to decrease energy demands during the molding process. High quality ceramic thin films could be applied by metalorganic chemical vapor deposition (MOCVD). Laser machining technologies have been developed for machining the ceramic materials. In this work we demonstrate the fabrication of zirconia based thin films on steel tools via MOCVD using solid metalorganic precursors. Shorter coating times and a solvent free process are some of the advantages of our new developed coating process. The ultrashort pulse laser processing (USPLP) was used to structure the developed MOCVD coating. Using this technology the ceramic material undergoes no thermal stress cracks, because USPLP is characterized by the preference of cold material removal. The laser processing procedure was developed by working out machining parameters for the different materials. The difference between steel and ceramic in the removal behavior was determined immediately so that a machining strategy for the ceramic CVD coating could be designed successfully. The implementation of defined roughness and a carbon fiber like structure in the coating were realized. Coated and laser-structured injection molding tools were tested regarding their desired properties under production conditions.

Yttria-Stabilized Zirconia Thin Films via MOCVD for Thermal Barrier and Protective Applications in Injection Molding

2017 ◽  
Vol 742 ◽  
pp. 427-433 ◽  
Author(s):  
Gregor Fornalczyk ◽  
Michaela Sommer ◽  
Frank Mumme
Keyword(s):  
Thin Films ◽  
Injection Molding ◽  
Thickness Distribution ◽  
Yttria Stabilized Zirconia ◽  
Tool Geometry ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
Molding Process ◽  
Multilayer Systems ◽  
Aspect Ratios

Steel tools, which are used in industrial high-throughput processes like injection molding, are susceptible for wear and corrosion due to rapid cyclic temperature and pressure fluctuation as well as the use of abrasive polymers. For the protection of tool surfaces high quality ceramic thin films can be applied by metal-organic chemical vapor deposition (MOCVD). In addition to protective properties ceramic materials like yttria-stabilized zirconia (YSZ) are able to thermally insulate tool surfaces providing a more precise temperature regulation with intent to avoid the formation of surface flaws, e.g. weld lines, in the later plastic parts. At the same time it enables the shortening of cycle times as well as the decrease of energy demands during the molding process. In this work we demonstrate the fabrication of zirconia based thin films and multilayer systems on steel tools with complex 3D surfaces via MOCVD using metal acetylacetonates as precursor materials. Coating development was carried out by measuring the film thicknesses at different parameter settings. The usage of autonomous liquid flow controllers enables the formation of multilayer systems as well as the control of crystallinity by addition of different dopants to the material. For process development substrates were engineered according to tool geometry containing typical cavities and defined cracks with aspect ratios up to 1:60. That application enables the proof of conformity and the verification of homogeneous film thickness distribution. Exploitation of these results offers the coating of tools, which are tested regarding their desired properties by industrial project partners under production conditions.

scholarly journals Fabrication, Characterization and Implementation of Thermo Resistive TiCu(N,O) Thin Films in a Polymer Injection Mold

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1423
Author(s):  
Eva Oliveira ◽  
João Paulo Silva ◽  
Jorge Laranjeira ◽  
Francisco Macedo ◽  
Senentxu Lanceros-Mendez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Injection Molding ◽  
Polymer Melt ◽  
General Idea ◽  
Injection Molding Process ◽  
Molding Process ◽  
Steel Mold ◽  
Polymer Injection ◽  
Injection Process

This paper presents the development of metallic thermoresistive thin film, providing an innovative solution to dynamically control the temperature during the injection molding process of polymeric parts. The general idea was to tailor the signal response of the nitrogen- and oxygen-doped titanium-copper thin film (TiCu(N,O))-based transducers, in order to optimize their use in temperature sensor devices. The results reveal that the nitrogen or oxygen doping level has an evident effect on the thermoresistive response of TiCu(N,O) films. The temperature coefficient of resistance values reached 2.29 × 10−2 °C−1, which was almost six times higher than the traditional platinum-based sensors. In order to demonstrate the sensing capabilities of thin films, a proof-of-concept experiment was carried out, integrating the developed TiCu(N,O) films with the best response in an injection steel mold, connected to a data acquisition system. These novel sensor inserts proved to be sensitive to the temperature evolution during the injection process, directly in contact with the polymer melt in the mold, demonstrating their possible use in real operation devices where temperature profiles are a major parameter, such as the injection molding process of polymeric parts.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

Filling Behavior of Polymer Material into Sub-^|^mu;m Structure in Injection Molding Process

2013 ◽  
Vol 133 (4) ◽  
pp. 105-111
Author(s):  
Chisato Yoshimura ◽  
Hiroyuki Hosokawa ◽  
Koji Shimojima ◽  
Fumihiro Itoigawa
Keyword(s):  
Injection Molding ◽  
Polymer Material ◽  
Injection Molding Process ◽  
Molding Process

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Thermodynamic Stability of Hexagonal and Rhombohedral Bn at Cvd Conditions from Van der Waals Corrected First Principles Calculations

2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong
Keyword(s):  
Thin Films ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Thermal Equilibrium ◽  
Density Functional ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Functional Theory ◽  
The Stability

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.

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